KBPxxM-E4, 3N2xx-E4
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Revision: 23-Sep-14 1Document Number: 88531
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Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
Note
(1) JEDEC® registered values
PRIMARY CHARACTERISTICS
Package KBPM
IF(AV) 1.5 A
VRRM 50 V to 1000 V
IFSM 60 A
IR5 μA
VF at IF = 1.0 A 1.0 V
TJ max. 150 °C
Diode variations In-Line
+~~−
Case Style KBPM
+
~
~
−
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum repetitive peak reverse voltage (1) VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage (1) VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage (1) VDC 50 100 200 400 600 800 1000 V
Maximum average forward output rectified
current at TA = 40 °C IF(AV) 1.5 A
Peak forward surge current
single half sine-wave (1)
TA = 25 °C IFSM
60 A
TA = 150 °C 40
Rating for fusing (t < 8.3 ms) I2t10A
2s
Operating junction and storage
temperature range (1) TJ, TSTG -55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS SYMBOL KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M
UNIT
Maximum instantaneous
forward voltage drop per
diode (1)
1.0 A
VF
1.0 V
1.57 A 1.3
Maximum DC reverse
current at rated DC blocking
voltage per diode (1)
TJ = 25 °C
IR
5.0
μA
TJ = 125 °C 500
Typical junction
capacitance per diode 4.0 V, 1 MHz CJ15 pF
KBPxxM-E4, 3N2xx-E4
www.vishay.com Vishay General Semiconductor
Revision: 23-Sep-14 2Document Number: 88531
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M
UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Typical thermal resistance (1) RJA 40 °C/W
RJL 13
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBP06M-E4/51 1.895 51 600 Anti-static PVC tray
3N250-E4/51 1.895 51 600 Anti-static PVC tray
0
20 40 60 80 100 120 140 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Capacitive Load
(per leg)
Bridge Output Full Wave Rectified
Current Average (A)
Ambient Temperature (°C)
P. C . B . M o unted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
60 Hz Resistive or
Inductive Load
=
5.0
10
20
I
pk
I
AV
0
101 100
10
20
30
40
50
60
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Single Half Sine-Wave
TJ = 150 °C
TA = 25 °C
1.0 Cycle
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
KBPxxM-E4, 3N2xx-E4
www.vishay.com Vishay General Semiconductor
Revision: 23-Sep-14 3Document Number: 88531
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10.1 10 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
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Revision: 13-Jun-16 1Document Number: 91000
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