Rugged Power MOSFETs File Number 2026 Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 150V-200V rps(on) = 0.8N and 1.2Q Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRFF220R, IRFF221R, IRFF222R and IRFF223R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFF-types are supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) metal package. Absolute Maximum Ratings IRFF220R, IRFF221R, IRFF222R, IRFF223R N-CHANNEL ENHANCEMENT MODE D 9205-42698 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE DRAIN (CASE) JEDEC TO-205AF Parameter IRFF220R | IRFF221R | IRFF222R | IRFF223R Units Vos Drain - Source Voltage @ 200 150 200 150 v Voga Drain - Gate Voltage (Res = 20 KQ) @ 200 150 200 150 Vv Ip @ Te = 25C Continuous Drain Current 3.5 3.5 3.0 3.0 A low Pulsed Drain Current @ 14 14 12 12 A Ves Gate - Source Voltage +20 v Pp @ Te = 26C Max. Power Dissipation 20 (See Fig. 14) Ww Linear Derating Factor 0.16 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 385 mj Te Storave femperature Flange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-229Rugged Power MOSFETs IRFF220R, IRFF221R, IRFF222R, IRFF223R Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage { IRFF220R IRFF222R | 200 | | ~ | V_ | Vas=OV IRFF221R = IRFF203R | 150 | - Vi | tp = 250A Vasim Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Ves, Ip = 2504 A _ lass Gate-Source Leakage Forward ALL = = 100 nA_ | Vas = 20V lass Gate-Source Leakage Reverse ALL = = -100 nA Vas = -20V loss Zero Gate Voltage Drain Current ALL = 250 pA Vos = Max. Rating, Ves = OV 7 = = 1000 HA Vos = Max. Rating x 0.8, Ves = OV, Te = 126C Inu On-State Drain Current @ IRFF220R |} 45 _ _ A IRFF221R Vos > Into X Rosion max, Vas = 10V IRFF222R | 44 _ _ A IRFF223R : Rosin Static Drain-Source On-State IRFF220R | __ 05 08 Q Resistance @ IRFF221R : = = Vas = 10V, ln = 2.0A IRFF222R | __ 08 12 OQ IRFF223R : . Qts Forward Transconductance @ ALL 15 2.25 - SU) | Vos > loon x Rostonmax, Ip = 2.0 Cis Input Capacitance ALL = 450 = pF Ves = OV, Vos = 25V, f = 1.0 MH Coss Output Capacitance ALL = 150 = pF See Fig io 2 Cros Reverse Transfer Capacitance ALL = 40 = pF : taion __s Turn-On Delay Time ALL = 20 40 ns Vp = 0.5 BVpss, In = 2.0A, Zo = 502 t Rise Time ALL _ 30 60 ns See Fig. 17 toiom _Turn-Off Delay Time ALL - 50 100 ns (MOSFET switching times are essentially te Fall Time ALL _ 30 60 ns independent of operating temperature.) Q, Total Gate Charge ALL _ "1 15 nc Ves = 10V, lo = 7.0A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) " See Fig. 18 for test circuit. (Gate charge is Qgs Gate-Source Charge ALL ~ 5.0 nc essentially independent of operating om f*RAler temperature.) Qse Gate-Drain (Miller) Charge ALL 6.0 =_ nc Lo internat Drain inductance ALL - 5.0 - nH Measured from the Modified MOSFET drain lead, 5mm symbol showing the (0.2 in.) from header internal device , to center of die. inductances LO Ls Internal Source Inductance ALL - 16 _ nH Measured from the source lead, mm 6 4 ts (0.2 in.) from header to source s bonding pad. nacn aes Thermal Resistance RuJC _Junction-to-Case T au | | [625 [cw] | unction-to-Ambient [vat | | TJ i7s [ecw | Free Air Operation | Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFF220R _ _ 35 A Modified MOSFET symbol (Body Diode) IRFF221R . showing the integral! IRFF222R 30 A reverse P-N junction rectifier. IRFF223R | ~ ( ' Isa Pulse Source Current IRFFZ220R | __ _ 14 A (Body Diode) @ IRFF221R 3 IRFF222R once zene inFFz2an| ~~ | | 2 | 4 Vs Diode Forward Voltage @ IRFF220R _ = = = o IRFF221R - 2.0 Vv Te = 25C, Is = 3.5A, Vas = OV IRFFZeeR | | | 18 | V_ | Te=28C Is=3.0A, Vos = OV ter Reverse Recovery Time ALL _ 350 = ns T, = 180C, Ir = 3.5A, die/dt = 100A/pys Qra Reverse Recovered Charge ALL _ 2.3 = uC Ty = 150C, Ir = 3.5A, dle/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ T,=25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = 20V, starting Ts = 25C, L = 12.5MH, Ros = 502, lpeek = 3.5A. 6-230Rugged Power MOSFETs iRFF220R, IRFF221R, iRFF222R, IRFF223R 10 } 80 ws PULSE TEST - st Vos > 'pion) * Rosion) max. a a = 2 pp -.- -- 5 x z= 3 zo z z = z[- TT 3 Fy z z 4; a 3 z S 3 PT = 12890 a 2 Fe 28h Soo FT) = -859C: a Q 20 40 6o 00 100 o 2 a 6 a 10 Vos, OAAIN-TO SOURCE VOLTAGE (VOLTS) Vas. GATE-TO-SOURCE VOLTAGE IVOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. OPERATION IN THIS AREA LIMITED BY a PULSE TEST y a g j = = - 3 5 2 = z > 2 a = z 2 < 3 = Te = 25C 5 3 Ty = 1500C MAX. 2 Ringe * 6.25 K/W SINGLE PULSE a a 6 4 10 102 5 0 20 50 100 200 500 Vos. DAAIN TO SOURCE VOLTAGE (VOLTS! Vos. DRAIN.TO-SOUACE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. > ~ o wn 2 2 THERMAL (IMPEDANCE (PER UNIT} a Ss a 1. DUTY FACTOR. 0 = a 2 2 a SINGLE PULSE (TRANSIENT , 2. PER UNIT BASE = Ringe * 6.25 DEG. CW. no THERMAL IMPEDANCE) 2. Ty Te* Pom Zenscltl 01 152 5 we 2 5 03 2 5 22 5 wl 2 5 19 2 5 0 ty, SQUARE WAVE PULSE OURATION (SECONDS) ZynsCltY Range, NORMALIZED EFFECTIVE TRANSIENT Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-231Rugged Power MOSFETs IRFF220R, IRFF221R, IRFF222R, IRFF223R boot Ty = -860C ~ Ty = 2500 Ty = 150C Ty = 12800 ~ js. TRANSCONDUCTANCE {SIEMENS} ipa. REVERSE ORAIN CURRENT (AMPERES) Ys > 'ptan} * Aoston) max. 0 us PULSE TEST Ty = 260 0 2 4 6 a 10 0 Ig, GAAIN CURRENT (AMPERES! 1 2 3 4 Vp. SOURCE TO-DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 428 22 11S od 1.05 (NORMALIZED) 2 0.95 oc Ves= Ip = 2A 0.85 Roston}, GRAIN-TO-SQURCE ON RESISTANCE 2 = BV pgs, ORAIN-TO-SQURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.75 02 -40 0 40 80 120 160 -40 0 40 80 120 160 Ty. JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 1000 TT T T T 20 ss | : Vos 0 pan b dl Ly | be 1 Mine _ T T T soo PE + He be Cigg = Ugg + Ogg, Cas SHORTED J z Vos = s0v Cras * Cyd = Vos = 100V 1 eee Cy Cyd z fos = 1005 z Coss = Ces* Cy * Coe & |__ Vos = 160V, IRFF220A, 222R | 3 600 . . - =Cas + Coa 4 3 | : | | | = 4 fi = poo 7 Of ze 0 1 + th T < en erent ered 3 | ! | 1 & a00 : * 2 ' i i S - t : T . 5 : i | So $F 7 oe ft 200 . - 2? i | 6 Ipe7Aa a fe FOR TEST CHRCUIT 4 : ne ' | SEEFIGURE1B tit | | tt a 10 20 30 40 50 Qo 4 8 12 16 20 Vos ORAIN TO SQUACE VOLTAGE 'VOLTS) Oy, TOTAL GATE CHARGE (all Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-232Rugged Power MOSFETs IRFF220R, IRFF221R, IRFF222R, IRFF223R 15 5 3 = z 2 ae a 4 z Vgg = 10V < a e wa a = % 10 = = = z <3 IRFF220R, 221R s S 2 3 3 ra 3 Lo" Leet Veg = 20V 3 | et Gs z2 z 05 = = S 3 2 5 1 3 RpSion) MEASUREO WITH CURRENT PULSE OF 20 us QURATION. INITIAL Ty = 25C. (HEATING. EFFECT OF 2.0 ys PULSE 1S MINIMAL } r i 1 f 0 5 10 15 20 0 25 50 7 100 125 150 Tg, CASE TEMPERATURE (C) Fig. 13 - Maximum drain current vs. case temperature. Ip, ORAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance vs. drain current. 20 Pp, POWER DISSIPATION (WATTS) a Q 20 4g 60 80 100 120 140 Te, CASE TEMPERATURE (C) Fig. 14 - Power vs. temperature derating curve. Vos as VARY tp TO OBTAIN REQUIRED PEAK i, but + Ros - Yoo 92CS- 42660 a . Fig. 16 - Unclamped Energy Waveforms Vgg*10V i Fo \ { 0.010 Vos O = CURRENT HSOLATED 92CS- 42659 REGULATOR SUPPLY? Fig. 15 - Unclamped Energy Test Circuit SAME TYPE 12 T BaTTenY } O aut ADJUST Ri Yop TO OBTAIN SPECIFIED Ip $ Ry PULSE GENERATOR ouT. r > T0 SCOPE 0.0182 O -Vps HIGH FREQUENCY SHUNT = CURRENT = CURRENT _ SAMPLING SAMPLING = RESISTOR RESISTOR Fig. 17 - Switching time test circuit. Fig. 18 - Gate charge test circuit. 6-233