MAXIMUM RATINGS: (TA=25°C) SYMBOL BCX54 BCX55 BCX56 UNITS
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC1.0 A
Peak Collector Current ICM 1.5 A
Base Current IB100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD1.3 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 96 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=30V 100 nA
ICBO VCB=30V, TA=125°C 10 μA
IEBO VEB=5.0V 100 nA
BVCBO IC=100μA (BCX54) 45 V
BVCBO IC=100μA (BCX55) 60 V
BVCBO IC=100μA (BCX56) 100 V
BVCEO IC=10mA (BCX54) 45 V
BVCEO IC=10mA (BCX55) 60 V
BVCEO IC=10mA (BCX56) 80 V
VCE(SAT) IC=500mA, IB=50mA 0.5 V
VBE(ON) VCE=2.0V, IC=500mA 1.0 V
hFE VCE=2.0V, IC=5.0mA 40
hFE VCE=2.0V, IC=150mA 63 250
hFE VCE=2.0V, IC=150mA
(BCX54-10, BCX55-10, BCX56-10) 63 160
hFE VCE=2.0V, IC=150mA
(BCX54-16, BCX55-16, BCX56-16) 100 250
hFE VCE=2.0V, IC=500mA 25
fTVCE=5.0V, IC=10mA, f=100MHz 130 MHz
BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R4 (30-July 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX54,
BCX55, and BCX56 types are NPN Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
MARKING CODE:
(SEE TABLE ON FOLLOWING PAGE)
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
R4 (30-July 2008)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
(Bottom View)
DEVICE MARKING CODE
BCX54 BA
BCX54-10 BC
BCX54-16 BD
BCX55 BE
BCX55-10 BG
BCX55-16 BM
BCX56 BH
BCX56-10 BK
BCX56-16 BL
