TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
T4-LDS-0057 Rev. 2 (081394) Page 1 of 2
DEVICES LEVELS
2N2369A 2N2369AUB 2N4449 JAN
2N2369AU 2N2369AUBC * JANTX
2N2369AUA JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage 2N2369A / U / UA
2N4449 / UB / UBC VCEO 15
20 Vdc
Emitter-Base Voltage 2N2369A / U / UA
2N4449 / UB / UBC VEBO 4.5
6.0 Vdc
Collector-Base Voltage VCBO 40 Vdc
Collector-Emitter Voltage ICES 40 Vdc
Total Power Dissipation @
TA = +25°C
2N2369A; 2N4449
UA, UB, UBC
U PT 0.36 (1)
0.36 (1, 5)
0.50 (4) W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
UA, UB, UBC
U
RθJA 400
400 (5)
350
°C/W
Note:
1. Derate linearly 2.06 mW°/C above TA = +25°C.
2. Derate linearly 4.76 mW°/C above TC = +95°C.
3. Derate linearly 3.08 mW°/C above TC = +70°C.
4. Derate linearly 3.44 mW°/C above TA = +54.5°C.
5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc V(BR)CEO 15 Vdc
Collector-Base Cutoff Current
VCE = 20Vdc ICES 0.4 μAdc
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB )
2N4449
SURFACE MOUNT
UA
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
SURFACE MOUNT
U (Dual Transistor)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
T4-LDS-0057 Rev. 2 (081394) Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
VEB = 4.5Vdc 10
Emitter-Base Cutoff Current
VEB = 4.0Vdc
IEBO
0.25
μAdc
Collector- Base Breakdown Voltage
VCB = 40Vdc 10
Collector-Base Cutoff Current
VCB = 32Vdc
ICBO
0.2
μAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10mAdc, VCE = 0.35Vdc
IC = 30mAdc, VCE = 0.4Vdc
IC = 10mAdc, VCE = 1.0Vdc
IC = 100mAdc, VCE = 1.0Vdc
hFE 40
30
40
20
120
120
120
120
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
VCE(sat) 0.20
0.25
0.45
Vdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
VBE(sat) 0.70
0.80
0.85
0.90
1.20
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
|hfe| 5.0 10
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 4.0 pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 5.0 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Sy mbol Min. Max. Unit
Turn-On Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc t
on 12
ηs
Turn-Off Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc toff 18
ηs
Charge Storage Time
IC = 10mAdc; IB1 = 10mAdc, IB2 = 10mAdc tS 13
ηs
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
