10RIA, 16RIA, 25RIA SERIES
Power Silicon Controlled Rectifiers
25, 35, 40, Amp RMS SCRs
Types : 10RIA10-10RIA140, 16RIA10-16RIA-140, 25RIA10-25RIA140
FEATURES
vAll diffused series / UNF threading.
vFull current rating @ 850C case temperature.
vHigh di/dt and dv/dt capabilities.
vExcellent dynamic characteristics.
vGlass passivation for high reliability.
ELECTRICAL RATINGS
TYPE 10RIA / 16RIA / 25RIA 10 20 40 60 80 100 120 140
VDRM Max. repetitive peak off state voltage (V) (1) 100 200 400 600 800 1000 1200 1400
VRRM Max. repetitive peak reverse voltage (V) (2) 100 200 400 600 800 1000 1200 1400
VRSM Max. non-repetitive peak reverse voltage (V) (3) 150 300 500 700 900 1100 1300 1500
IRM &Max. peak reverse & off state current
IDM @ rated VDRM & VRRM 1250C -mA 20 10 10 10 10 10 10 10
THERMAL MECHANICAL SPECIFICATIONS
Rthjc Maximum thermal resistance
junction to case
Rthcs Contact thermal resistance
case-to-sink 0.350C/W
10RIA 16RIA 25RIA
1.850C/W 1.150C/W 0.750C/W
TJJunction operating temp. range -650C to +1250C
Tstg Storage temperature range -650C to +1500C
Mounting torque 0.2 M-Kg min.
(Non-lubricated threads) 0.3 M-Kg max.
Approximate weight 14 gms.
10/16/25 RIA
Ruttonsha International Rectifier Ltd.
RUTTONSHA
UNIT:- M M
SILICON CONTROLLED RECTIFIERS
10 RIA, 16 RIA, 25 RIA SERIES
ELECTRICAL SPECIFICATIONS
IT(AV) Maximum average on-state current 1800 conduction case temperature 850C (A) 101625
ITSM Maximum peak one cycle non-repetitive surge current : (A)
No voltage reapplied 50 Hz. TJ = 1250C (4) 225 340 420
TJ = 450C270 395 470
100% VRRM Reapplied, sinusoidal TJ = 1250C190 285 350
10ms half period TJ = 450C225 335 395
I2tMax. I2t for fusing (A2Sec) t = 10ms TJ = 1250C180 405 615
TJ = 450C255 555 780
100% VRRM Reapplied t = 1.5ms TJ = 1250C100 220 335
TJ = 450C140 303 425
VTM Maximum peak on-state voltage @ 250C, 1800C conduction IT(AV) (V) 10A (32A peak)
16A (50A peak) 1.75 1.75 1.70
25A (79A peak)
ILMaximum latching current @ 250C (6) 200
IHMaximum holding current @ 250C (mA) (5) 100
tgt Typical turn-on time TJ = 250C (µ sec) (7) 0.9
di/dt Maximum repetitive rate of rise of turned on current VDRM ≤ 600V (A/µs) (10) 200
dv/dt Critical rate of rise of off state voltage
TJ = 1250CExponeantial to 100% VDRM (V/µs) 100
Exponeantial to 67% VDRM (V/µs) 300
tqTypical turn-off time TJ = 1250C (µ sec) (9) 110
trr Typical reverse recovery time TJ = 1250C (µ sec) (8) 4.0
IT(RMS) Maximum RMS on-state current (A) 25 35 40
TRIGGERING
PG(AV) Maximum average gate power 1250C (W) 2.0
PGM Maximum peak gate power 1250C (W) 8.0
IGM Maximum peak positive gate current 1250C (A) 1.5
- VGM Maximum peak negative gate voltage 1250C (V) 10.0
1250C35.0
1250C1.0
-650C90.0
250C60.0
-650C3.0
250C2.0
VGD Maximum required gate voltage that will not trigger 1250C V (11) 0.2
10RIA 16RIA 25RIA
Initial
Initial
Initial
Initial
IGT Maximum required gate current to trigger (mA)
VGT Maximum required gate voltage to trigger (V)
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
Last Update : July 2000
