MBRS140T3G, SBRS8140T3G SBRS140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Features * * * * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 V Max @ 1.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection ESD Ratings: Human Body Model = 3B (> 8000 V) Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These are Pb-Free Devices MARKING DIAGRAM AYWW B14 G G B14 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb-Free Pac (Note: Microdot may be in either location) Mechanical Characteristics * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * SMB CASE 403A 260C Max. for 10 Seconds Cathode Polarity Band **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping MBRS140T3G SMB (Pb-Free) 2,500 / Tape & Reel SBRS8140T3G* SMB (Pb-Free) 2,500 / Tape & Reel SBRS140T3G SMB (Pb-Free) 2,500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2014 May, 2017 - Rev. 11 1 Publication Order Number: MBRS140T3/D MBRS140T3G, SBRS8140T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current TL = 115C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature A 1.0 A 40 TJ -65 to +125 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristic Thermal Resistance - Junction-to-Lead (TL = 25C) Value RqJL Unit C/W 12 ELECTRICAL CHARACTERISTICS Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) iR Value Unit V 0.6 mA 1.0 10 2 TC = 100C TC = 125C 0.2 TC = 25C TC = -40C TC = -55C 0.02 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2 TC = 100C TC = 125C 0.2 TC = 25C TC = -40C TC = -55C 0.02 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 1.0 200 180 TJ = 125C NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF C, CAPACITANCE (pF) 160 100C 75C 25C 140 120 100 80 60 40 20 0 4 8 12 16 20 24 28 32 36 0 40 0 4 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 10 RATED VOLTAGE APPLIED RqJC = 12C/W TJ = 125C 9 8 7 6 5 4 DC 3 SQUARE WAVE 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (C) 110 120 130 Figure 5. Current Derating (Case) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) I R , REVERSE CURRENT (mA) MBRS140T3G, SBRS8140T3G 5 DC SQUARE WAVE TJ = 125C 4 5 3 CAPACITANCE LOAD 2 IPK IAV 10 = 20 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Power Dissipation www.onsemi.com 3 5 36 40 MBRS140T3G, SBRS8140T3G PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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