Order this document by MPSA44/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 400 Vdc Collector - Base Voltage VCBO 500 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 300 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 400 -- Vdc Collector - Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) V(BR)CES 500 -- Vdc Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 500 -- Vdc Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCB = 400 Vdc, IE = 0) ICBO -- 0.1 Adc Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) ICES -- 500 nAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO -- 0.1 Adc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSA44 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 40 50 45 40 -- 200 -- -- -- -- -- 0.4 0.5 0.75 Unit ON CHARACTERISTICS(1) DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE -- Collector - Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) -- 0.75 Vdc Output Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 7.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 130 pF hfe 1.0 -- -- Vdc SMALL- SIGNAL CHARACTERISTICS Small-Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data 160 TA = 125C hFE, DC CURRENT GAIN 140 120 VCE = 10 V 100 25C 80 60 40 -55C 20 1.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MPSA44 200 300 0.5 0.4 IC = 1.0 mA IC = 10 mA 0.3 TA = 25C 0.2 0.1 0 10 Figure 1. DC Current Gain 30 100 10 k 50 k 1000 TA = 25C IC, COLLECTOR CURRENT (mA) 1.0 ms VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 1.0 k 3.0 k 300 IB, BASE CURRENT (A) Figure 2. Collector Saturation Region 1.0 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 300 200 1.0 30 3.0 10 IC, COLLECTOR CURRENT (mA) 0.3 100 10 Figure 3. "On" Voltages CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE 10% 2.0 MPSA44 10 20 50 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500 10 |h fe |, SMALL-SIGNAL CURRENT GAIN Cib 50 20 Cob 5.0 TA = 25C f = 1.0 MHz 2.0 1.0 0.3 0.5 1.0 s Figure 4. Active Region -- Safe Operating Area 100 10 100 s 20 1.0 1.0 300 TC = 25C TA = 25C 100 2.0 0 0.1 C, CAPACITANCE (pF) IC = 50 mA 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Figure 5. Capacitance Motorola Small-Signal Transistors, FETs and Diodes Device Data 3.0 VCE = 10 V f = 10 MHz TA = 25C 2.0 1.5 1.0 0.1 0.2 0.3 1.0 3.0 10 IC, COLLECTOR CURRENT (mA) 30 100 Figure 6. High Frequency Current Gain 3 MPSA44 10 Vin +9.7 V t, TIME ( s) 5.0 PW = 50 S DUTY CYCLE = 2.0% 2.0 0 1.0 -4.0 V 0.5 0.2 0.1 1.0 VCC = 150 V IC/IB = 10 TA = 25C VBE(off) = 4.0 Vdc VCC tr RL td 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 Vout 100 Vin RB CS 4.0 pF* Figure 7. Turn-On Switching Times and Test Circuit 10 Vin 5.0 +10.7 V t, TIME ( s) ts PW = 50 S DUTY CYCLE = 2.0% 2.0 1.0 0.5 0.2 tf VCC = 150 V IC/IB = 10 TA = 25C -11.4 V VCC RL 0.1 1.0 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 100 Vout Vin RB CS 4.0 pF* Figure 8. Turn-Off Switching Times and Test Circuit * Total Shunt Capacitance or Test Jig and Connectors. 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPSA44 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 MPSA44 Motorola reserves the right to make changes without further notice to any products herein. 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