1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 400 Vdc
Collector–Base Voltage VCBO 500 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC300 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 400 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0) V(BR)CES 500 — Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) V(BR)CBO 500 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 6.0 — Vdc
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0) ICBO — 0.1 µAdc
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0) ICES — 500 nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO — 0.1 µAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSA44/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPSA44
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain(1)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
hFE 40
50
45
40
—
200
—
—
—
Collector–Emitter Saturation Voltage(1)
(IC = 1.0 mAdc, IB = 0.1 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) —
—
—
0.4
0.5
0.75
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — 0.75 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cobo — 7.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 130 pF
Small–Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) hfe 1.0 — —
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
MPSA44
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
160
201.0
hFE, DC CURRENT GAIN
IB, BASE CURRENT (
µ
A)
Figure 2. Collector Saturation Region
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
0.3
010 10 k300
TA = 25
°
C
IC = 1.0 mA
30 100 1.0 k 3.0 k 50 k
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
1.0
00.1 30
TA = 25
°
C
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
3.0 10 100
VBE(sat) @ IC/IB = 10
0.3 300
2.0 5.0 10 20 50 200 300
140
60
100
120
TA = 125
°
C
25
°
C
–55
°
C
VCE = 10 V
0.4
0.2
0.1
IC = 10 mA
1.0
0.8
0.6
0.4
0.2
80
40
100
IC = 50 mA
VCE, COLLECTOR VOLTAGE (VOLTS)
10
IC, COLLECTOR CURRENT (mA)
20 50
Figure 4. Active Region — Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
300
200
100
20
10
1.0 100 200 500
100
µ
s
1.0 ms
TA = 25
°
C
1000
VALID FOR DUTY CYCLE
≤
10%
1.0 s
TC = 25
°
C
MPSA44
C, CAPACITANCE (pF)
Figure 5. Capacitance
REVERSE BIAS (VOLTS) 10030103.01.00.50.3
100
TA = 25
°
C
f = 1.0 MHz
Cib
300
1.0
2.0
5.0
10
20
50
Cob
|hfe|, SMALL–SIGNAL CURRENT GAIN
10
3.0
2.0
1.5
1.00.1 303.0 100.3 1001.00.2
Figure 6. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
f = 10 MHz
TA = 25
°
C
1.0 2.0 5.0
2.0
MPSA44
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 7. Turn–On Switching Times and Test Circuit
10
0.11.0
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–Off Switching Times and Test Circuit
3.0 10 30 50
5.0
0.2
1.0
2.0
0.5
100
t, TIME ( s)
µ
t, TIME ( s)
µ
10
0.11.0 3.0 10 30 50
5.0
0.2
1.0
2.0
0.5
100
*Total Shunt Capacitance or Test Jig and Connectors.
VCC = 150 V
IC/IB = 10
TA = 25
°
C
VBE(off) = 4.0 Vdc
tr
td
VCC = 150 V
IC/IB = 10
TA = 25
°
C
ts
tf
+9.7 V
–4.0 V
0
Vin
PW = 50
µ
S
DUTY CYCLE = 2.0%
VCC
RL
Vout
CS
≤
4.0 pF*
RB
Vin
–11.4 V
+10.7 V
Vin
PW = 50
µ
S
DUTY CYCLE = 2.0%
VCC
RL
Vout
CS
≤
4.0 pF*
RB
Vin
MPSA44
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
MPSA44
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MPSA44/D
*MPSA44/D*
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