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DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 15

2004 Jan 13

DISCRETE SEMICONDUCTORS

BSR15; BSR16

PNP switching transistors

2004 Jan 13 2

NXP Semiconductors Product data sheet

PNP switching transistors BSR15; BSR16

FEATURES

•High current (max. 600 mA)

•Low voltage (max. 60 V).

APPLICATIONS

•Medium power switching.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

NPN complements: BSR13 and BSR14.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BSR15 T7*

BSR16 T8*

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM256

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BSR15 −plastic surface mounted pa ckage; 3 leads SOT23

BSR16

2004 Jan 13 3

NXP Semiconductors Pr oduct data shee t

PNP switching transistors BSR15; BSR16

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −60 V

VCEO collector-emitter voltage open base

BSR15 − −40 V

BSR16 − −60 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −600 mA

ICM peak collector current − −800 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C−250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2004 Jan 13 4

NXP Semiconductors Pr oduct data shee t

PNP switching transistors BSR15; BSR16

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current

BSR15 IE = 0; VCB = −50 V − −20 nA

IE = 0; VCB = −50 V; Tj = 150 °C− −20 µA

collector cut-off current

BSR16 IE = 0; VCB = −50 V − −10 nA

IE = 0; VCB = −50 V; Tj = 150 °C− −10 µA

IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA

hFE DC current gain IC = −0.1 mA; VCE = −10 V

BSR15 35 −

BSR16 75 −

DC current gain IC = −1 mA; VCE = −10 V

BSR15 50 −

BSR16 100 −

DC current gain IC = −10 mA; VCE = −10 V

BSR15 75 −

BSR16 100 −

DC current gain IC = −150 mA; VCE = −10 V; note 1 100 300

DC current gain IC = −500 mA; VCE = −10 V; note 1

BSR15 30 −

BSR16 50 −

VCEsat collector-emitter saturation

voltage IC = −150 mA; IB = −15 mA − −400 mV

IC = −500 mA; IB = −50 mA − −1.6 V

VBEsat base-emitt er saturation voltage IC = −150 mA; IB = −15 mA − −1.3 V

IC = −500 mA; IB = −50 mA − −2.6 V

Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −8pF

Ceemitter cap a citance IC = ic = 0; VEB = −2 V; f = 1 MHz −30 pF

fTtransition freque ncy IC = −50 mA; VCE = −20 V; f = 100 MHz 200 −MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton turn-on time ICon = −150 mA; IBon = −15 mA;

IBoff = 15 mA −40 ns

tddelay time −12 ns

trrise time −30 ns

toff turn-off time −365 ns

tsstorage time −300 ns

tffall time −65 ns

2004 Jan 13 5

NXP Semiconductors Pr oduct data shee t

PNP switching transistors BSR15; BSR16

Fig.2 Test circuit for switching times.

handbook, full pagewidth

DUT

MGD624

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = 3.5 V; VCC = −29.5 V.

Oscilloscope: input impedance Zi = 50 Ω.

2004 Jan 13 6

NXP Semiconductors Pr oduct data shee t

PNP switching transistors BSR15; BSR16

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 13 7

NXP Semiconductors Pr oduct data shee t

PNP switching transistors BSR15; BSR16

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Inter net at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property righ ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document does not form p ar t o f an y q uot ation or co ntract, is believed to b e a ccur ate and reliable an d may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12421

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PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14.

High current (max. 600 mA)

Low voltage (max. 60 V).

Medium power switching.

Similar products

BSR15_BSR16 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products

page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

Quality and reliability disclaimer

Datasheet

Download datasheet

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(Product Specification)

v.4.0, 2004-01-13

Pages, 133kB

PNP switching transistors

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ect to the subsequent disclaimers

General description

Features and benefits

Applications

Quick reference

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Pricing/ordering/availability

Samples

Products/packages

Quality/reliability/chemical

content

Design support

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Parametrics/similar products Hide

Type number Package hFE [min] hFE [max] fT [min](MHz) Polarity Complement IC [max](mA) VCEO [max](V) Ptot [max](mW) toff(ns)

BSR16 SOT23

(TO-236AB) 50 >50 200 PNP BSR14 600 60 250 365

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Type

number

Ordering code

(12NC)

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number

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online

Samples

BSR16 9335 084 00215 BSR16,215 EU FUTURE ELECTRONICS UK 84,000 6/30/2011 Buy online Order

samples

AS AVNET ELECTRONICS / HONG

KONG 48,000 6/24/2011 Buy online

NA AVNET ELECTRONICS MARKETING 8,845 6/30/2011 Buy online

NA MOUSER ELECTRONICS 4,257 6/30/2011 Buy online

JAPAN CHIP ONE STOP yes 6/27/2011 Buy online

Products/packages Hide

Type number Orderable part number Ordering code (12NC) Product status Package Packing Marking ECCN

BSR16 BSR16,215 9335 084 00215 Volume production SOT23

(TO-236AB) Tape reel smd Standard Marking

Quality/reliability/chemical content Hide

Type number Orderable part number Chemical content RoHS Leadfree conversion date RHF IFR (FIT) MTBF (hours) MSL MSL LF

BSR16 BSR16,215 BSR16 week 34, 2003 1NA

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