SZA-3044Z - N/A - Pdf.Support

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Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without

notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product

for use in life-support devices and/or systems.

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

1 EDS-103989 Rev D

Preliminary

Sirenza Microdevices’ SZA-3044 is a high linearity class AB

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. This HBT

amplifier is made with InGaP on GaAs device technology

and fabricated with MOCVD for an ideal combination of low

cost and high reliability. This product is specifically

designed as a final or driver stage for 802.16 equipment in

the 3.3-3.8 GHz bands. It can run from a 3V to 6V supply.

Optimized on-chip impedance matching circuitry provides a

50Ω nominal RF input impedance. The external output

match and bias adjustability allows load line optimization

for other applications or over narrower bands. It features an

output power detector, on/off power control and high RF

overdrive robustness. This product is available in a RoHS

Compliant and Green package with matte tin finish, desig-

nated by the “Z” package suffix.

Key Specifications

Symbol Parameters: Test Conditions, App circuit page 6

Z0 = 50Ω, VCC = 5.0V, Iq = 220mA, TBP = 30ºC Unit Min. Typ. Max.

fOFrequency of Operation MHz 2700 3800

P1dB Output Power at 1d B Co mpression – 3.3GHz dBm 29.5 31.0

Output Power at 1dB Compression – 3.6GHz 28.5 30.0

S21 Small Signal Gain – 3.4GHz dB 23 25 27

Small Signal Gain – 3.6GHz 22 24 26

Pout Output power at 2.5% EVM 802. 11a 54Mb/s - 3.4GHz dBm 24

IM3 Third Order Suppression (Pout=20dBm per tone) - 3.6GHz dBc -40 -37

NF Noise Figure at 3.6 GHz dB 5.0

IRL Worst Case Input Return Loss 3.3-3.8GHz dB 12 15

ORL Worst Case Output Return Loss 3.3-3.6GHz 7 10

Vdet Range Output Voltage Range for Pout=+15dBm to +30dBm V 0.9 to 2.1

Icq Quiescent Current (Vcc = 5V) mA 185 220 255

IVPC Power Up Control Current, Vpc=5V, ( IVPC1 + IVPC2 ) mA 2.7

ILEAK Off Vcc Leakage Current Vpc=0V uA 10 100

Rth, j-l Thermal Resistance (junction - lead) ºC/W 22

Functional Block Diagram

SZA-3044 / SZA-3044Z

2.7-3.8GHz 5V 1W Power Amplifier

Product Features

Applications

•P1dB = 31dBm @ 5V

•802.11 a 54Mb/s 2.5% EVM Performance

Pout = 24dBm, Vcc=5V, 340mA, PAE 14.5%

Pout = 25dBm, Vcc=6V, 365mA, PAE 14.5%

•On-chip Output Power Detector

•Robust - Survives RF Input Power = +15dBm

•On Chip ESD Protection Class 2 (2000V)

•Power up/down control < 1µs

•Pin compatible with SZA-2044 and SZA-5044

•802.16 WiMAX Driver or Output St age

•Fixed Wireless, WLL

Product Description

4mm x 4mm QFN Package

RFIN RFOUT

Vcc

Power Detector Vout

Active

Bias Active

Bias

Power

Up/Down

Control

RoHS Compliant

& PackageGreen

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

2 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

Pin Out Description

Pin # Function Description

1,2,4,5,7,

9,11,13,1

5,17,19 N/C These are unused pins and not wired inside the package. They may be grounded or connected to adjacent pins.

6VPC1

VPC1 is the bias control pin for the stage 1 active bias circuit. An external series resistor is required for proper

setting of bias levels. Refer to th e evaluation board sche matic for resistor value. To prevent potential damage, do

not apply voltage to this pin that is +1V greater than voltage applied to pin 20 (Vbias) unless Vpc supply current

capability is less than 10 mA.

8VPC2

VPC2 is the bias control pin for the stage 2 active bias circuit. An external series resistor is required for proper

setting of bias levels. Refer to th e evaluation board sche matic for resistor value. To prevent potential damage, do

not apply voltage to this pin that is +1V greater than voltage applied to pin 20 (Vbias) unless Vpc supply current

capability is less than 10 mA.

10 Vdet Output power detecto r voltage. Load with > 10K ohms for best performance

3 RFIN RF input pin. This is DC grounded internal to the IC. Do not apply voltage to this pin.

12,14 RFOUT RF output pin. This is also another conne ction to the 2nd stage colle ctor.

16 VC2 2nd stage collector bias pin. Apply 3.0 to 5.0V to this pin.

18 VC1 1st stage collector bias pin. Apply 3.0 to 5.0V to this pin.

20 Vbias Active bias network VCC. Apply 3.0 to 5.0V to this pin.

EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for opti-

mum thermal and RF performance. Several vias should be located under the EPAD as shown in the recom-

mended land pattern (page 5).

Caution: ESD Sensitive

Appropriate precaution in handling, packaging

and testing devices must be observed.

Absolute Maximum Ratings

Parameters Value Unit

VC2 Collector Bias Current (IVC2) 600 mA

VC1 Collector Bias Current (IVC1) 300 mA

Device Voltage (VD)7.0V

Power Dissipation 3.5 W

Operating Lead Temperature (TL) -40 to +85 ºC

Max RF Input Power for 50 ohm output

load 15 dBm

Max RF Input Power for 10:1 VSWR RF

out load 8dBm

Storage Temperature Range -40 to +150 ºC

Operating Junction Temperature (TJ) +150 ºC

ESD Human Body Model 2000 V

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation

the device voltage and current must not exceed the maximum

operating values specified in the table on page one.

Bias conditions should also satisfy the following expression:

IDVD < (TJ - TL) / RTH’ j-l

Simplified Device Schematic

Stage 1

Bias Stage 2

Bias

Pin 3 Pin 12, 14

20 Pin

6Pin

18 Pin

8Pin

EPAD EPAD

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

3 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

Typica l Performance, 3.4-3.7GHz Application Circuit (Vcc=5V, Icq=360mA, 802.1 1a 54Mb/s 64QAM)*

Parameter Units 3.4GHz 3.5GHz 3.6GHz 3.7GHz 3.8GHz

Gain @ Pout=24dBm dB - - 24.5 24.2 23.6 22.7 21.5

P1dB dBm - - 31.5 31.5 31.0 31.0 30.0

Pout @ 2.5% EVM* dBm - - 23.5 23.5 24.0 23.5 23.0

I @ Pout 2.5% EVM* mA - - 445 450 450 450 433

Typica l Performance, 3.2-3.6GHz 6V Application Circuit (Vcc=6V, Icq=220mA, 802.11a 54Mb/s 64QAM)*

Parameter Units 3.3GHz 3.4GHz 3.5GHz 3.6GHz 3.7GHz

Gain @ Pout=24dBm dB - 25.6 25.6 25.1 24.1 23.2 -

P1dB dBm - 32.5 32.0 32.0 31.5 31.5 -

Pout @ 2.5% EVM* dBm - 25 25 25 24.5 24.5 -

I @ Pout 2.5% EVM* mA - 370 365 363 356 355 -

Typica l Performance, 3.2-3.6GHz Application Circuit (Vcc=5V, Icq=220mA, 802.1 1a 54Mb/s 64QAM)*

Parameter Units 3.2GHz 3.3GHz 3.4GHz 3.5GHz 3.6GHz 3.7GHz

Gain @ Pout=24dBm dB 25.7 25.6 25.5 25.2 24.3 23.4 -

P1dB dBm 31.0 31.0 30.5 30.0 30.0 29.5 -

Pout @ 2.5% EVM* dBm 23.5 24.0 24.0 23.5 23.0 23.0 -

I @ Pout 2.5% EVM* mA 331 340 339 330 327 325 -

Typical Perfo rmance, 2.7-3.0GHz App lication Cir cuit (Vcc=5V, Icq=360mA, 802.11a 54Mb/s 64QAM)*

Parameter Units 2.7GHz 2.8GHz 2.9GHz 3.0GHz

Gain @ Pout=24dBm dB 25.3 25.3 25.3 25.2 - - -

P1dB dBm 31 31 31 31 - - -

Pout @ 2.5% EVM* dBm 23 23.5 23.5 23.5 - - -

I @ Pout 2.5% EVM* mA 438 453 450 444 - - -

* See 3.0-3.6GHz Application Circuit, pg. 7.

* Contact Applications Engineering for details about application circuit.

* Optimized for maximum Pout @ 2.5% EVM over 3.4-3.7GHz band. Same applicatio n circuit from Rev. B

datasheet. Contact Applications Engineering for details.

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

4 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

Measured 3.2 - 3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 220mA, T=25C)

EVM vs Pout, F=3.4GHz

802.11g, OFDM, 54Mb/s, 64QAM

10 12 14 16 18 20 22 24 26

Pout(dBm)

EVM(%)

-40C -20C 0C +25C +70C +85C

EVM vs Pout, F=3.6GHz

802.11g, OFDM, 54Mb/s, 64QAM

10 12 14 16 18 20 22 24 26

Pout(dBm)

EVM(%)

-40C -20C 0C +25C +70C +85C

EVM vs Pout, F=3.3GHz

802.11g, OFDM, 54Mb/s, 64QAM

10 12 14 16 18 20 22 24 26

Pout(dBm)

EVM(%)

-40C -20C 0C +25C +70C +85C

IM3 vs Pout (2 tone avg.), T=25C

Tone Spacing=1MHz

-60

-55

-50

-45

-40

-35

-30

12 14 16 18 20 22 24 26 28

Pout(dBm)

IM3(dBc)

3.3GHz 3.4GHz 3.6GHz

Gain vs Pout, T=25C

12 14 16 18 20 22 24 26 28 30 32

Pout(dBm)

Gain(dB)

3.3GHz 3.4GHz 3.6GHz

Gain vs Pout

F=3.4GHz

12 14 16 18 20 22 24 26 28 30 32

Pout(dBm)

Gain(dB)

-40C -20C 0C +25C +70C +85C

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

5 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

Measured 3.2 - 3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 220mA, T=25C)

Narrowband S11 - Input Return Loss

-30

-25

-20

-15

-10

3.3 3.4 3.5 3.6 3.7 3.8

Frequency(GHz)

S11(dB)

-40C -20C 0C +25C +70C +85C

Narrowband S12 - Reverse Isolation

-70

-65

-60

-55

-50

-45

-40

-35

-30

3.3 3.4 3.5 3.6 3.7 3.8

Frequency(GHz)

S12(dB)

-40C -20C 0C +25C +70C +85C

Narrowband S21 - Forward Gain

3.3 3.4 3.5 3.6 3.7 3.8

Frequency(GHz)

S21(dB)

-40C -20C 0C +25C +70C +85C

Narrowband S22 - Output Return Loss

-15

-10

-5

3.3 3.4 3.5 3.6 3.7 3.8

Frequency(GHz)

S22(dB)

-40C -20C 0C +25C +70C +85C

DC Supply Current (Idc) vs Pout, T=25C

0.2

0.3

0.4

0.5

0.6

0.7

11 13 15 17 19 21 23 25 27 29 31

Pout(dBm)

Idc(A)

3.3GHz 3.4GHz 3.6GHz

Noise Figure (NF) vs Frequency

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

3.3 3.4 3.5 3.6 3.7 3.8

Frequency(GHz)

NF(dB)

-40C +25C +85C

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

6 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

Measured 3.2 - 3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 220mA, T=25C)

Broadban d S11 - Inpu t Return Loss

-25

-20

-15

-10

-5

0123456

Frequency(GHz)

S11(dB)

-40C -20C 0C +25C +70C +85C

Broadband S12 - Reverse Isolation

-80

-70

-60

-50

-40

-30

-20

-10

0123456

Frequency(GHz)

S12(dB)

-40C -20C 0C +25C +70C +85C

Broadband S21 - Forward Gain

0123456

Frequency(GHz)

S21(dB)

-40C -20C 0C +25C +70C +85C

Broadband S22 - Output Return Loss

-15

-10

-5

0123456

Frequency(GHz)

S22(dB)

-40C -20C 0C +25C +70C +85C

RF Power Detector (Vdet) vs Pout, T=25C

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

11 13 15 17 19 21 23 25 27 29 31

Pout(dBm)

Vdet(V)

3.3GHz 3.4GHz 3.6GHz

RF Power Detector (Vdet) vs Pout

F=3.4GHz

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

11 13 15 17 19 21 23 25 27 29 31

Pout(dBm)

Vdet(V)

-40C -20C 0C +25C +70C +85C

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

7 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

SZA3044

3.2-3.6 GHz Application Circu it F or Vcc = V+ = Vpc = 5.0V

3.2-3.6 GHz Evalua tion Boar d Lay out Fo r Vcc = V+ = Vpc = 5. 0V

Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper

Note: R5 jumper is required to achieve

specified performance. Do not omit. It

provides 0.6nH of induct ance.

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

8 EDS-103989 Rev D

Preliminary

SZA-3044 2.7-3.8 GHz 5V Power Amp

Package Outline Drawing (dimensio ns in mm): Refer to package outlline drawing for more detail.

LOT ID

SZA3044

SZA-3044 - 85/15 Sn/Pb plating

SZA-3044Z - Matte Sn plating

Part Number Ordering Information

Part Number Reel Size Devices/Reel

SZA-3044 13” 3000

SZA-3044Z 13” 3000

Part Symbolization

The part will be symbolized with an “SZA-3044” for

Sn/Pb plating or “SZA-3044Z” for RoHS green compli-

ant product. Marking designator will be on the top sur-

face of the package.

Recommended Land Pattern (dimensions in mm[in]): Recommended PCB Soldermask (SMOBC) for landing

pattern (dimensions in mm[in]):