IGB15N60T
TrenchStop® Series q
Power Semiconductors 1 Rev. 2.4 Oct. 07
Low Loss IGBT in TrenchStop® technology
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for frequency inverters for washing machines, fans,
pumps and vacuum cleaners
• TrenchStop® technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C VCE(sat),Tj=25°C Tj,max Marking Code Package
IGB15N60T 600V 15A 1.5V 175°C G15T60 PG-TO263-3-2
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
30
15
Pulsed collector current, tp limited by Tjmax ICpuls 45
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 45
A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC 5 µs
Power dissipation TC = 25°C Ptot 130 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+175
Soldering temperature (reflow soldering, MSL1) 245
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO263-3-2
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 2 Rev. 2.4 Oct. 07
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 1.15
Thermal resistance,
junction – ambient
RthJA 6cm² Cu 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.2mA 600 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=15A
Tj=25°C
Tj=175°C
-
-
1.5
1.9
2.05
-
Gate-emitter threshold voltage VGE(th) IC=210µA,VCE=VGE 4.1 4.9 5.7
V
Zero gate voltage collector current
ICES VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=15A - 8.7 - S
Integrated gate resistor RGint -
Dynamic Characteristic
Input capacitance Ciss - 860 -
Output capacitance Coss - 55 -
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 24 -
pF
Gate charge QGate VCC=480V, IC=15A
VGE=15V
- 87 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 7 - nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤5µs
VCC = 400V,
Tj = 150°C
- 137.5 - A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 3 Rev. 2.4 Oct. 07
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 17 -
Rise time tr - 11 -
Turn-off delay time td(off) - 188 -
Fall time tf - 50 -
ns
Turn-on energy Eon - 0.22 -
Turn-off energy Eoff - 0.35 -
Total switching energy Ets
Tj=25°C,
VCC=400V,IC=15A,
VGE=0 /15V,
RG=15Ω,
L
σ
1)=154nH,
C
σ
1)=39pF
Energy losses include
“tail” and diode
reverse recovery. 2) - 0.57 -
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 17 -
Rise time tr - 15 -
Turn-off delay time td(off) - 212 -
Fall time tf - 79 -
ns
Turn-on energy Eon - 0.34 -
Turn-off energy Eoff - 0.47 -
Total switching energy Ets
Tj=175°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG= 15 Ω
L
σ
1)=154nH,
C
σ
1)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 0.81 -
mJ
1) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
2) Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 4 Rev. 2.4 Oct. 07
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
10A
20A
30A
40A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0.1A
1A
10A
10µs
50µs
1ms
DC
tp=2µs
10ms
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 15Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C 150°C
0W
20W
40W
60W
80W
100W
120W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Ic
Ic
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 5 Rev. 2.4 Oct. 07
IC, COLLECTOR CURRENT
0V 1V 2V 3V
0A
5A
10A
15A
20A
25A
30A
35A
40A
15V
7V
9V
11V
13V
VGE=20V
IC, COLLECTOR CURRENT
0V 1V 2V 3V
0A
5A
10A
15A
20A
25A
30A
35A
4
0A
15V
7V
9V
11V
13V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
5A
10A
15A
20A
25A
30A
35A
25°C
TJ=175°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
IC=15A
IC=30A
IC=7.5A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 6 Rev. 2.4 Oct. 07
t, SWITCHING TIMES
0A 5A 10A 15A 20A 25A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
10Ω 20Ω 30Ω 40Ω 50Ω
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 15,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, RG=15,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.21mA)
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 7 Rev. 2.4 Oct. 07
E, SWITCHING ENERGY LOSSES
0A 5A 10A 15A 20A 25A
0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
0.2 mJ
0.4 mJ
0.6 mJ
0.8 mJ
1.0 mJ
1.2 mJ
1.4 mJ
1.6 mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 15,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJ
0.8mJ
0
.
9
m
J
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1
.
2
m
J
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, RG = 15,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 15A, RG = 15,
Dynamic test circuit in Figure E)
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 8 Rev. 2.4 Oct. 07
VGE, GATE-EMITTER VOLTAGE
0nC 20nC 40nC 60nC 80nC 100nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V 30V 40V 50V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=15 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC
(
sc
)
, short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
50A
100A
150A
200A
tSC, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 9 Rev. 2.4 Oct. 07
ZthJC, TRANSIENT THERMAL RESISTANCE
1
µ
s10
µ
s100
µ
s 1ms 10ms 100ms
10-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
R,(K/W)
τ
, (s)
0.13265 5.67*10-2
0.37007 1.558*10-2
0.30032 2.147*10-3
0.34701 2.724*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2
R2
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 10 Rev. 2.4 Oct. 07
PG-TO263-3-2
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 11 Rev. 2.4 Oct. 07
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=60nH
an d Stray capacity Cσ =40pF.
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IGB15N60T
TrenchStop® Series q
Power Semiconductors 12 Rev. 2.4 Oct. 07
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/6/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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