BC817K-25 - Diotec Semiconductor

BC817K / BC818K

NPN Surface Mount Low Rth Si-Epi-Planar Transistors

Si-Epi-Planar Low Rth Transistoren für die Oberflächenmontage NPN

Version 2011-10-26

Dimensions - Maße [mm]

1 = B 2 = E 3 = C

Power dissipation – Verlustleistung 500 mW

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

Weight approx. – Gewicht ca. 0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)

BC817K BC818K

Collector-Base-volt. – Kollektor-Basis-Spannung C open VCBO 50 V 30 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 45 V 25 V

Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V

Power dissipation – Verlustleistung Tsp ≤ 115°C Ptot 500 mW

Collector current – Kollektorstrom (dc) IC500 mA

Peak Collector current – Kollektor-Spitzenstrom ICM 1 A

Base current – Basisstrom IB100 mA

Peak Base current – Basis-Spitzenstrom IBM 200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

+150°C

-55…+150°C

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

VCE = 1 V, IC = 100 mA Group -16

Group -25

Group -40

hFE

100

160

250

–

250

400

630

VCE = 1 V, IC = 500 mA all groups hFE 40 – –

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 500 mA, IB = 50 mA VCEsat – – 0.7 V

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 500 mA, IB = 50 mA VBEsat – – 1.2 V

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2.5 max

1.3

±0.1

1.1

0.4

2.9

±0.1

1 2

Type

Code

1.9

BC817K / BC818K

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 25 V, (E open) ICBO – – 100 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 4 V, (C open) IEBO – – 100 nA

Transition Frequency – Transitfrequenz

VCE = 5 V, IC = 50 mA, f = 100 MHz fT– 170 MHz –

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 3 pF –

Thermal resistance junction to soldering point

Wärmewiderstand Sperrschicht – Lötpunkt Rthsp < 70 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren BC807K / BC808K

Marking of available current gain groups per type

Stempelung der lieferbaren

Stromverstärkungsgruppen pro Typ

BC817K-16 = 6A or 6CR

BC817K-25 = 6B or 6CS

BC817K-40 = 6C or 6CT

BC818K-16 = 6E or 6CR

BC818K-25 = 6F or 6CS

BC818K-40 = 6G or 6CT