IXTH110N25T IXTV110N25TS Trench Gate Power MOSFET VDSS ID25 RDS(on) = 250V = 110A 24m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS VGSM Continuous Transient 20 30 V V ID25 ILRMS IDM TC = 25C Lead Current Limit, RMS TC = 25C, pulse width limited by TJM 110 75 300 A A A IA EAS TC = 25C TC = 25C 25 1 A J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 694 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C G TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. FC Mounting force (PLUS220) 11..65 / 2.5..14.6 N/lb. Weight TO-247 PLUS220 6 4 g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 250 VGS(th) VDS = VGS, ID = 1mA 2.5 G S D (TAB) G = Gate S = Source IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) D = Drain TAB = Drain Features z International standard packages Avalanche rated Advantages V 4.5 D (TAB) S PLUS220SMD (IXTV_S) z Symbol Test Conditions (TJ = 25C unless otherwise specified) D V z z z Easy to mount Space savings High power density 200 nA TJ = 125C VGS = 10V, ID = 0.5 * ID25, Notes 1, 2 5 A 250 A 24 m Applications z z z z z z (c) 2008 IXYS CORPORATION, All rights reserved DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies DS99904A(08/08) IXTH110N25T IXTV110N25TS Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) gfs VDS = 10V, ID = 0.5 * ID25, Note 1 Min. Typ. 65 110 S 9400 pF 850 pF 55 pF 19 ns 27 ns 60 ns 27 ns 157 nC 40 nC 50 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 25A Qgd RthJC RthCS 0.18 C/W (TO-247) 0.25 C/W Source-Drain Diode Symbol Test Conditions TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, pulse width limited by TJM 350 A VSD IF = 55A, VGS = 0V, Note 1 1.2 V trr QRM IRM IF = 55A, -di/dt = 250A/s VR= 100V, VGS = 0V TO-247AD Outline Max. 170 ns 2.3 C 27 A 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD (IXTV_S) Outline Notes: 1. Pulse test, t 300ms; duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH110N25T IXTV110N25TS Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 250 110 VGS = 10V 8V 7V 6V 100 90 200 175 70 ID - Amperes ID - Amperes 80 60 50 5.5V 40 150 125 6V 100 75 30 50 20 5V 25 5V 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2.6 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature 110 20 3.0 VGS = 10V 8V 7V 100 90 2.8 VGS = 10V 2.6 RDS(on) - Normalized 2.4 80 ID - Amperes VGS = 10V 8V 7V 225 6V 70 60 50 40 5V 30 2.2 2.0 I D = 110A 1.8 1.6 I D = 55A 1.4 1.2 1.0 20 0.8 10 0.6 0.4 0 0 1 2 3 4 5 -50 6 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 90 3.4 VGS = 10V External Lead Current Limit 80 3.0 TJ = 125C 60 ID - Amperes RDS(on) - Normalized 70 2.6 2.2 1.8 50 40 30 1.4 TJ = 25C 1.0 20 10 0.6 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTH110N25T IXTV110N25TS Fig. 8. Transconductance Fig. 7. Input Admittance 160 180 140 160 TJ = - 40C 140 g f s - Siemens ID - Amperes 120 TJ = 125C 25C - 40C 100 80 60 25C 120 100 125C 80 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 0 6.2 20 40 VGS - Volts 60 80 100 120 140 160 140 160 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 125V 9 250 I D = 25A 8 I G = 10mA 7 VGS - Volts IS - Amperes 200 150 100 6 5 4 3 TJ = 125C TJ = 25C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 20 VSD - Volts 40 60 80 100 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.10 0.01 Crss 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.00 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH110N25T IXTV110N25TS Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 29 29 RG = 2 28 28 VGS = 15V t r - Nanoseconds t r - Nanoseconds 26 25 I = 110A D 24 I = 55A D TJ = 25C 27 VDS = 125V 27 26 RG = 2 25 VGS = 15V 24 VDS = 125V 23 23 TJ = 125C 22 22 21 21 20 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 60 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 38 30 36 tf TJ = 125C, VGS = 15V 29 34 RG = 2, VGS = 15V VDS = 125V 28 t r - Nanoseconds 27 D = 110A, 55A 26 35 25 24 25 20 4 5 6 7 8 9 td(off) - - - - 64 26 62 24 60 I D = 110A 56 21 18 54 20 16 52 19 14 25 10 35 45 55 65 75 85 95 105 115 50 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 85 VGS = 15V 220 td(off) - - - - tf 90 200 TJ = 125C, VGS = 15V 70 26 TJ = 125C 25 TJ = 25C 65 60 t f - Nanoseconds 75 27 80 I D = 55A, 110A 180 VDS = 125V 70 160 60 140 50 120 40 100 23 55 30 80 22 50 20 60 45 10 TJ = 125C 21 20 30 40 50 60 70 80 90 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 100 110 120 t d ( o f f ) - Nanoseconds 80 TJ = 25C t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - VDS = 125V 24 66 28 58 90 28 68 I D = 55A TJ - Degrees Centigrade 30 RG = 2, 70 30 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 29 72 VDS = 125V RG - Ohms tf 120 20 22 3 110 22 23 30 2 100 t d ( o f f ) - Nanoseconds 40 I 90 74 32 t f - Nanoseconds td(on) - - - - t d ( o n ) - Nanoseconds 31 tr 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 45 70 ID - Amperes 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_110N25T(8W)08-11-08-A