IXTV110N25TS - IXYS - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 250 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 250 V

VGSS Continuous ± 20 V

VGSM Transient ± 30 V

ID25 TC= 25°C 110 A

ILRMS Lead Current Limit, RMS 75 A

IDM TC= 25°C, pulse width limited by TJM 300 A

IATC= 25°C 25 A

EAS TC= 25°C 1 J

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 694 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from case for 10s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

MdMounting torque (TO-247) 1.13 / 10 Nm/lb.in.

FCMounting force (PLUS220) 11..65 / 2.5..14.6 N/lb.

Weight TO-247 6 g

PLUS220 4 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 250 V

VGS(th) VDS = VGS, ID = 1mA 2.5 4.5 V

IGSS VGS = ± 20V, VDS = 0V ± 200 nA

IDSS VDS = VDSS 5 μA

VGS = 0V TJ = 125°C 250 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 24 mΩ

Trench Gate

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTH110N25T

IXTV110N25TS VDSS = 250V

ID25 = 110A

RDS(on) ≤≤

≤≤

≤ 24mΩΩ

ΩΩ

Ω

Features

zInternational standard packages

z Avalanche rated

Advantages

zEasy to mount

zSpace savings

zHigh power density

Applications

zDC-DC converters

zBattery chargers

zSwitched-mode and resonant-mode

power supplies

zDC choppers

zAC motor drives

zUninterruptible power supplies

GDS

TO-247 (IXTH)

G = Gate D = Drain

S = Source TAB = Drain

PLUS220SMD (IXTV_S)

G

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH110N25T

IXTV110N25TS

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 65 110 S

Ciss 9400 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 850 pF

Crss 55 pF

td(on) 19 ns

tr 27 ns

td(off) 60 ns

tf 27 ns

Qg(on) 157 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 40 nC

Qgd 50 nC

RthJC 0.18 °C/W

RthCS (TO-247) 0.25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

TJ = 25°C unless otherwise specified) Min. Typ. Max.

ISVGS = 0V 110 A

ISM Repetitive, pulse width limited by TJM 350 A

VSD IF = 55A, VGS = 0V, Note 1 1.2 V

trr 170 ns

QRM 2.3 μC

IRM 27 A

Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact location must be

5 mm or less from the package body.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 2Ω (External)

TO-247AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

ÆP 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

1 2 3

PLUS220SMD (IXTV_S) Outline

IF = 55A, -di/dt = 250A/μs

VR= 100V, VGS = 0V

IXTH110N25T

IXTV110N25TS

Fig. 1. Ou tp u t C h aracteri sti cs

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6

V

DS

- Vo lt s

I

D

- Am peres

V

GS

= 10V

8V

7V

6V

5V

5.5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

25

50

75

100

125

150

175

200

225

250

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Am peres

V

GS

= 10V

8V

7V

5V

6V

Fi g . 3. Ou tput C h a r acter istics

@ 125ºC

0

10

20

30

40

50

60

70

80

90

100

110

0123456

V

DS

- Vo lts

I

D

- Am peres

V

GS

= 10V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 55A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- N orma lize d

V

GS

= 10V

I

D

= 110A

I

D

= 55A

Fig. 5. R

DS(on)

Normalized to I

D

= 55A Value

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 20 40 60 80 100 120 140 160 180 200 220 240 260

I

D

- Amp e res

R

DS(on)

- N orma lize d

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temper ature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Am peres

Exter nal Lead Current Limit

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH110N25T

IXTV110N25TS

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2

V

GS

- Volts

I

D

- A mpe re s

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0

20

40

60

80

100

120

140

160

180

0 20 40 60 80 100 120 140 160

I

D

- Amperes

g

f s

- Siem ens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

50

100

150

200

250

300

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

V

SD

- Vo lt s

I

S

- A m peres

T

J

= 125ºC T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160

Q

G

- NanoCoul o mbs

V

GS

- V o lts

V

DS

= 125V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Vo lt s

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maximu m Tran si ent Thermal

Impedance

0.00

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTH110N25T

IXTV110N25TS

Fig . 14. R esistive Tu rn -o n

Ri se Time vs. D rai n Cu r ren t

20

21

22

23

24

25

26

27

28

29

20 30 40 50 60 70 80 90 100 110 120

I

D

- Amp eres

t

r

- N anoseconds

R

G

= 2Ω

V

GS

= 15V

V

DS

= 12 5V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 15. R esistiv e Tu r n -o n

Switchi n g Ti mes vs. Gate Resistance

20

25

30

35

40

45

50

2345678910

R

G

- Ohm s

t

r

- N anoseconds

19

20

21

22

23

24

25

26

27

28

29

30

31

t

d ( o n )

- N a n o seco n d s

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 125V

I

D

= 110A, 55A

Fi g . 16. R esistive Tu r n - o ff

Switching Times vs. Junction Temperature

14

16

18

20

22

24

26

28

30

32

34

36

38

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- N anoseconds

50

52

54

56

58

60

62

64

66

68

70

72

74

t

d ( o f f )

- N anoseconds

t

f

t

d(off)

- - - -

R

G

= 2Ω, V

GS

= 15V

V

DS

= 125V

I

D

= 55A

I

D

= 110A

Fi g . 17. R esisti ve Tu r n -off

Switch ing Ti mes vs. D r ai n C u r r en t

21

22

23

24

25

26

27

28

29

30

20 30 40 50 60 70 80 90 100 110 120

I

D

- Ampe res

t

f

- Nanoseconds

45

50

55

60

65

70

75

80

85

90

t d ( o f f ) - Nanoseconds

t

f

t

d(off

)

- - - -

R

G

= 2Ω, V

GS

= 15V

V

DS

= 125V T

J

= 25ºC

T

J

= 125ºC

T

J

= 125ºC

T

J

= 25ºC

Fi g . 13. R esistive Turn - o n

Ri se Time vs. Ju n cti o n Temper a tu r e

21

22

23

24

25

26

27

28

29

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Cen tig rade

t

r

- Nan oseco nds

R

G

= 2Ω

V

GS

= 15V

V

DS

= 125V

I

D

= 110A

I

D

= 55A

Fi g . 18. R esisti ve Tu r n -off

Swit ch i n g Ti mes vs. Gate R esi sta n ce

10

20

30

40

50

60

70

80

90

100

2345678910

R

G

- Ohm s

t

f

- N anoseconds

40

60

80

100

120

140

160

180

200

220

t

d ( o f f )

- Na no secon ds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 125V I

D

= 55A, 110A