APM4500AK Dual Enhancement Mode MOSFET (N- and P-Channel) Pin Description Features * D1 D1 D2 N-Channel 20V/8A, D2 RDS(ON) =22m(typ.) @ VGS = 4.5V S1 G1 S2 G2 RDS(ON) =30m(typ.) @ VGS = 2.5V * P-Channel Top View of SOP - 8 -20V/-4.3A, RDS(ON) =80m(typ.) @ VGS =-4.5V (8) D1 RDS(ON) =105m(typ.) @ VGS =-2.5V * * * (7) D1 (6) D2 (5) D2 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (2) G1 (RoHS Compliant) (4) G2 Applications * Power Management in Notebook Computer, S1 (1) Portable Equipment and Battery Powered N-Channel Systems. S2 (3) P-Channel Ordering and Marking Information APM4500A Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Assembly Material L : Lead Free Device G : Halogen and Lead Free Device Assembly Material Handling Code Temp. Range Package Code APM4500A K : APM4500A XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 1 www.anpec.com.tw APM4500AK Absolute Maximum Ratings Symbol (TA = 25C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage 12 12 8 -4.3 30 -16 2.5 -2 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RJA* VGS=10V(N) VGS=-10V(P) Unit V A A 150 C -55 to 150 TA=25C 2 TA=100C 0.8 Thermal Resistance-Junction to Ambient W C/W 62.5 Note: *Surface Mounted on 1in pad area, t 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM4500AK Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A N-Ch 20 - - VGS=0V, IDS=-250A P-Ch -20 - - IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V - - 1 - - 30 IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V - - -1 - - -30 VGS(th) Gate Threshold Voltage IGSS RDS(ON) a Gate Leakage Current Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 TJ=85C TJ=85C N-Ch P-Ch VDS=VGS, IDS=250A N-Ch 0.5 0.7 1 VDS=VGS, IDS=-250A P-Ch -0.5 -0.75 -1 N-Ch - 10 P-Ch - - 10 VGS=4.5V, IDS=8A N-Ch - 22 26 VGS=-4.5V, IDS=-4.3A P-Ch - 80 90 VGS=2.5V, IDS=5.2A N-Ch - 30 36 VGS=-2.5V, IDS=-2A P-Ch - 105 115 VGS=10V, VDS=0V 2 V A V A m www.anpec.com.tw APM4500AK Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) APM4500AK Test Conditions Min. Typ. Max. Unit Diode Characteristics ISD=2.5A, VGS=0V N-Ch - 0.8 1.3 ISD=-2A, VGS=0V N-Channel ISD=-8A, dlSD/dt =100A/s P-Ch - -0.7 -1.3 N-Ch - 15 - P-Ch - 22 - N-Ch Reverse Recovery Charge P-Channel ISD =-4.3A, dlSD/dt =100A/s P-Ch - 7 6 - N-Ch - 4 - P-Ch - 9 - N-Channel VGS=0V, VDS=10V, Frequency=1.0MHz N-Ch - 740 - P-Ch - 565 - N-Ch - 160 - P-Channel VGS=0V, VDS=-10V, Frequency=1.0MHz P-Ch - 125 - N-Ch - 125 - P-Ch - 95 - N-Ch - 5 10 P-Ch - 6 12 N-Ch - 11 21 P-Ch - 13 24 N-Ch - 40 73 P-Ch - 34 62 N-Ch - 23 42 P-Ch - 32 59 N-Channel VDS=10V, VGS=4.5V, IDS=8A N-Ch - 10 13 P-Ch - 6 8 N-Ch - 1 - P-Channel VDS=-10V, VGS=-4.5V, IDS=-4.3A P-Ch - 1 - N-Ch - 4 - P-Ch - 2.2 - VSDa Diode Forward Voltage trr Reverse Recovery Time qrr V ns nC Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) tf VGS=0V,VDS=0V,F=1MHz N-Channel VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 P-Channel VDD=-10V, RL=10, IDS=-1A, VGEN=-4.5V, RG=6 Turn-off Delay Time Turn-off Fall Time Gate Charge Characteristics pF ns b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge nC Notes: a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 3 www.anpec.com.tw APM4500AK Typical Characteristics N-Channel Drain Current 2.5 10 2.0 8 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 0.5 6 4 2 o o TA=25 C 0.0 0 20 40 TA=25 C,VG=4.5V 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it 300s 10 1ms Rd s(o n) ID - Drain Current (A) 20 Tj - Junction Temperature (C) 100 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 2 Mounted on 1in pad o RJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4500AK Typical Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 60 20 ID - Drain Current (A) 16 RDS(ON) - On - Resistance (m) VGS= 3, 4, 5, 6, 7, 8, 9, 10V 18 2.5V 14 12 10 8 2V 6 4 2 50 VGS=2.5V 40 30 VGS=4.5V 20 10 1.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 4 8 12 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 40 1.6 1.4 35 Normalized Threshold Voltage RDS(ON) - On - Resistance (m) 20 IDS=250A ID=8A 30 25 20 15 10 16 1.2 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM4500AK Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.00 30 VGS = 4.5V IDS = 8A 10 1.50 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=150 C o Tj=25 C 1 0.25 o RON@Tj=25 C: 22m 0.00 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1200 10 Frequency=1MHz 1100 VGS - Gate - source Voltage (V) 1000 C - Capacitance (pF) 900 800 Ciss 700 600 500 400 300 Coss 200 Crss 100 0 VDS=10V 9 7 6 5 4 3 2 1 0 0 IDS=8A 8 4 8 12 16 20 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 0 6 www.anpec.com.tw APM4500AK Typical Characteristics (Cont.) P-Channel Drain Current 2.5 5 2.0 4 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 0.5 3 2 1 o 0.0 TA=25 C 0 20 o 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 10 Rd s(o n) Lim it -ID - Drain Current (A) 0 Tj - Junction Temperature (C) 100 1ms 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 TA=25 C,VG=-4.5V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 2 Mounted on 1in pad o RJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM4500AK Typical Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 200 20 VGS= -4,-5,-6,-7 -8,-9,-10V 18 180 -ID - Drain Current (A) 16 RDS(ON) - On - Resistance (m) -3V 14 12 10 8 -2V 6 4 -1.5V 2 0 0.0 0.5 1.0 1.5 2.0 160 140 VGS= -2.5V 120 100 VGS= -4.5V 80 60 40 2.5 20 3.0 0 4 8 12 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 160 1.4 Normalized Threshold Voltage 140 RDS(ON) - On - Resistance (m) 20 IDS= -250A ID= -4.3A 120 100 80 60 40 20 16 1 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 8 www.anpec.com.tw APM4500AK Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 20 2.0 VGS = -4.5V IDS = -4.3A 10 1.6 -IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 80m 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 1.8 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS= -10V 9 600 -VGS - Gate - source Voltage (V) 700 C - Capacitance (pF) 0.6 Tj - Junction Temperature (C) 800 Ciss 500 400 300 200 Coss Crss 100 0 0.3 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 0 2 4 6 8 10 12 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 IDS= -4.3A 9 www.anpec.com.tw APM4500AK Package Information SOP-8 D E E1 SEE VIEW A h X 45 c A 0.25 b GAUGE PLANE SEATING PLANE A1 A2 e L VIEW A S Y M B O L SOP-8 MILLIMETERS MIN. INCHES MAX. A MIN. MAX. 1.75 0.069 0.004 0.25 0.010 A1 0.10 A2 1.25 b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0 8 0 e 0.049 1.27 BSC 0.050 BSC 8 Note: 1. Follow JEDEC MS-012 AA. 2. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension "E" does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 10 www.anpec.com.tw APM4500AK Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application SOP- 8 A H T1 C d 330.02.00 50 MIN. P0 P1 P2 D0 D1 4.00.10 8.00.10 2.00.05 1.5+0.10 -0.00 1.5 MIN. 12.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. D W E1 F 20.2 MIN. 12.00.30 1.750.10 5.50.05 T A0 B0 K0 0.6+0.00 6.400.20 5.200.20 2.100.20 -0.40 (mm) Devices Per Unit Package Type SOP-8 Unit Tape & Reel Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 Quantity 2500 11 www.anpec.com.tw APM4500AK Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat t 25 C to Peak 25 Time Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 217C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package. Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 12 www.anpec.com.tw APM4500AK Classification Reflow Profiles (Cont.) Table 1. SnPb Eutectic Process - Package Peak Reflow Temperatures 3 Package Thickness Volume mm <350 <2.5 mm 240 +0/-5C 2.5 mm 225 +0/-5C 3 Volume mm 350 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2008 13 www.anpec.com.tw