Dual Enhancement Mode MOSFET (N- and P-Channel)
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM4500AK
Features
Applications
• Power Management in Notebook Computer,
Pin Description
Ordering and Marking Information
N-Channel
• N-Channel
20V/8A,
RDS(ON) =22mΩ(typ.) @ VGS = 4.5V
RDS(ON) =30mΩ(typ.) @ VGS = 2.5V
•P-Channel
-20V/-4.3A,
RDS(ON) =80mΩ(typ.) @ VGS =-4.5V
RDS(ON) =105mΩ(typ.) @ VGS =-2.5V
•Super High Dense Cell Design
•Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel
Top View of SOP − 8
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
Portable Equipment and Battery Powered
Systems.
APM4500A
Handling Code
Temp. Range
Package Code
APM4500A K : APM4500A
XXXXX XXXXX - Date Code
°
Assembly Material
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
G1
S1
D1 D1
(8) (7)
(2)
(1)
S1G1
S2
G2
D1D1
D2D2
G2
S2
D2 D2
(6) (5)
(4)
(3)
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw2
APM4500AK
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter N Channel
P Channel
Unit
VDSS Drain-Source Voltage 20 -20
VGSS Gate-Source Voltage ±12 ±12 V
ID* Continuous Drain Current 8 -4.3
IDM* Pulsed Drain Current VGS=10V(N)
VGS=-10V(P)
30 -16 A
IS* Diode Continuous Forward Current 2.5 -2 A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Power Dissipation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM4500AK
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
VGS=0V, IDS=250µA N-Ch
20 - -
BVDSS
Drain-Source Breakdown
Voltage VGS=0V, IDS=-250µA P-Ch
-20 - - V
VDS=16V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain
Current TJ=85°C
N-Ch
- - 30
VDS=-16V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain
Current TJ=85°C
P-Ch
- - -30
µA
VDS=VGS, IDS=250µA N-Ch
0.5 0.7 1
VGS(th)
Gate Threshold Voltage VDS=VGS, IDS=-250µA P-Ch
-0.5
-0.75
-1 V
N-Ch
- - ±10
IGSS Gate Leakage Current VGS=±10V, VDS=0V P-Ch
- - ±10
µA
VGS=4.5V, IDS=8A N-Ch
- 22 26
VGS=-4.5V, IDS=-4.3A P-Ch
- 80 90
VGS=2.5V, IDS=5.2A N-Ch
- 30 36
RDS(ON) a
Drain-Source On-State
Resistance
VGS=-2.5V, IDS=-2A P-Ch
- 105
115
mΩ
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw3
APM4500AK
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM4500AK
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Diode Characteristics
ISD=2.5A, VGS=0V N-Ch
- 0.8 1.3
VSDa Diode Forward Voltage ISD=-2A, VGS=0V P-Ch
- -0.7
-1.3
V
N-Ch
- 15 -
trr Reverse Recovery Time P-Ch
- 22 - ns
N-Ch
- 7 -
qrr Reverse Recovery Charge
N-Channel
ISD=-8A, dlSD/dt =100A/µs
P-Channel
ISD =-4.3A, dlSD/dt =100A/µs
P-Ch
- 6 - nC
Dynamic Characteristics b
N-Ch
- 4 -
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz P-Ch
- 9 - Ω
N-Ch
- 740
-
Ciss Input Capacitance P-Ch
- 565
-
N-Ch
- 160
-
Coss Output Capacitance P-Ch
- 125
-
N-Ch
- 125
-
Crss Reverse Transfer
Capacitance
N-Channel
VGS=0V,
VDS=10V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-10V,
Frequency=1.0MHz P-Ch
- 95 -
pF
N-Ch
- 5 10
td(ON) Turn-on Delay Time P-Ch
- 6 12
N-Ch
- 11 21
tr Turn-on Rise Time P-Ch
- 13 24
N-Ch
- 40 73
td(OFF) Turn-off Delay Time P-Ch
- 34 62
N-Ch
- 23 42
tf Turn-off Fall Time
N-Channel
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
P-Channel
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω P-Ch
- 32 59
ns
Gate Charge Characteristics b
N-Ch
- 10 13
Qg Total Gate Charge P-Ch
- 6 8
N-Ch
- 1 -
Qgs Gate-Source Charge P-Ch
- 1 -
N-Ch
- 4 -
Qgd Gate-Drain Charge
N-Channel
VDS=10V, VGS=4.5V,
IDS=8A
P-Channel
VDS=-10V, VGS=-4.5V,
IDS=-4.3A P-Ch
- 2.2 -
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw4
APM4500AK
Typical Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
N-Channel
Normalized Transient Thermal Resistance
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
TA=25oC
020 40 60 80 100 120 140 160
0
2
4
6
8
10
TA=25oC,VG=4.5V
0.01 0.1 110 100
0.01
0.1
1
10
100
Rds(on) Limit
1s
TA=25OC
10ms
300µs
1ms
100ms
DC
1E-4 1E-3 0.01 0.1 110 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw5
APM4500AK
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
Drain-Source On Resistance
VGS - Gate - Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
Normalized Threshold Voltage
Typical Characteristics (Cont.)
N-Channel
12345678910
10
15
20
25
30
35
40
ID=8A
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
12
14
16
18
20
2.5V
1.5V
2V
VGS= 3, 4, 5, 6, 7, 8, 9, 10V
0 4 8 12 16 20
0
10
20
30
40
50
60
VGS=4.5V
VGS=2.5V
-50 -25 025 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 IDS=250µA
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw6
APM4500AK
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Characteristics (Cont.)
N-Channel
-50 -25 025 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VGS = 4.5V
IDS = 8A
RON@Tj=25oC: 22mΩ
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
30
Tj=150oC
Tj=25oC
04812 16 20
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
Frequency=1MHz
Crss Coss
Ciss
04812 16 20
0
1
2
3
4
5
6
7
8
9
10 VDS=10V
IDS=8A
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw7
APM4500AK
Typical Characteristics (Cont.)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
-VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
-ID - Drain Current (A)
P-Channel
Normalized Transient Thermal Resistance
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
TA=25oC
020 40 60 80 100 120 140 160
0
1
2
3
4
5
TA=25oC,VG=-4.5V
0.01 0.1 110 100
0.01
0.1
1
10
100
Rds(on) Limit
1s
TA=25OC
10ms
1ms
100ms
DC
1E-4 1E-3 0.01 0.1 110 30
1E-3
0.01
0.1
1
2
Mounted on 1in 2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.10.2
Single Pulse
Duty = 0.5
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw8
APM4500AK
Typical Characteristics (Cont.)
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
-ID - Drain Current (A)-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Output Characteristics
Tj - Junction Temperature (°C)
Gate Threshold VoltageDrain-Source On Resistance
-VGS - Gate - Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
Normalized Threshold Voltage
P-Channel
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
12
14
16
18
20
-3V
-2V
-1.5V
VGS= -4,-5,-6,-7 -8,-9,-10V
04812 16 20
20
40
60
80
100
120
140
160
180
200
VGS= -2.5V
VGS= -4.5V
1 2 3 4 5 6 7 8 9 10
20
40
60
80
100
120
140
160
ID= -4.3A
-50 -25 025 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 IDS= -250µA
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw9
APM4500AK
Typical Characteristics (Cont.)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
-IS - Source Current (A)
-VDS - Drain - Source Voltage (V)
C - Capacitance (pF)
Capacitance Gate Charge
QG - Gate Charge (nC)
-VGS - Gate - source Voltage (V)
P-Channel
0.0 0.3 0.6 0.9 1.2 1.5 1.8
0.1
1
10
20
Tj=150oC
Tj=25oC
04812 16 20
0
100
200
300
400
500
600
700
800
Frequency=1MHz
Crss Coss
Ciss
0246810 12
0
1
2
3
4
5
6
7
8
9
10 VDS= -10V
IDS= -4.3A
-50 -25 025 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS = -4.5V
IDS = -4.3A
RON@Tj=25oC: 80mΩ
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw10
APM4500AK
Package Information
SOP-8
S
Y
M
B
O
LMIN. MAX.
1.75
0.10
0.17 0.25
0.25
A
A1
c
D
E
E1
e
h
L
MILLIMETERS
b0.31 0.51
SOP-8
0.25 0.50
0.40 1.27
MIN. MAX.
INCHES
0.069
0.004
0.012 0.020
0.007 0.010
0.010 0.020
0.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0
°
8
°
0
°
8
°
D
e
E
E1
SEE VIEW A
cb
h X 45
°
A
A1A2
L
VIEW A
0.25
SEATING PLANE
GAUGE PLANE
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
3.80
5.80
4.80
4.00
6.20
5.00 0.189 0.197
0.228 0.244
0.150 0.157
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw11
APM4500AK
Carrier Tape & Reel Dimensions
Devices Per Unit
Package Type Unit Quantity
SOP-8 Tape & Reel 2500
Application
A H T1 C d D W E1 F
330.0±
2.00
50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
12.0±
0.30
1.75
±
0.10
5.5±
0.05
P0 P1 P2 D0 D1 T A0 B0 K0
SOP- 8
4.0±
0.10
8.0±
0.10
2.0±
0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±
0.20
5.20±
0.20
2.10±
0.20
(mm)
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw12
APM4500AK
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles
Reflow Condition (IR/Convection or VPR Reflow)
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL) 183°C
60-150 seconds 217°C
60-150 seconds
Peak/Classification Temperature (Tp)
See table 1 See table 2
Time within 5°C of actual
Peak Temperature (tp) 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Reliability Test Program
t 25 C to Peak
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Zone
TL to TP
°
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2008 www.anpec.com.tw13
APM4500AK
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
Package Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Classification Reflow Profiles (Cont.)
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
