BFR91A
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 1 (8)
Document Number 85031
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
94 9308
1
3
2
BFR91A Marking: BFR91A
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
13623
Absolute Maximum Ratings
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 2 V
Collector current IC50 mA
Total power dissipation Tamb ≤ 60
°
C Ptot 300 mW
Junction temperature Tj150
°
C
Storage temperature range Tstg –65 to +150
°
C
Maximum Thermal Resistance
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35
m
m Cu RthJA 300 K/W
BFR91A
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
2 (8) Document Number 85031
Electrical DC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 ICES 100
m
A
Collector-base cut-off current VCB = 20 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10
m
A
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA hFE 40 90 150
Electrical AC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz fT6 GHz
Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb 0.4 pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.3 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 1.5 pF
Noise figure VCE = 8 V, ZS = 50
W
, f = 800 MHz,
IC = 5 mA F 1.6 dB
VCE = 8 V, ZS = 50
W
, f = 800 MHz,
IC = 30 mA F 2.3 dB
Power gain VCE = 8 V, IC = 30 mA, ZS = 50
W
,
ZL = ZLopt, f = 800 MHz Gpe 14 dB
Linear output voltage – two
tone intermodulation test VCE = 8 V, IC = 30 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MH,
ZS = ZL = 50
W
V1 = V2280 mV
Third order intercept point VCE = 8 V, IC = 30 mA, f = 800 MHz IP332 dBm
BFR91A
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 3 (8)
Document Number 85031
Common Emitter S–Parameters
Z0 = 50
W,
Tamb = 25
_
C, unless otherwise specified
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.92 –22.1 6.38 162.8 0.02 78.4 0.9 –8.1
300 0.78 –61.3 5.42 134.7 0.05 61.5 0.88 –20.8
500 0.64 –92.7 4.38 114.3 0.07 52.8 0.79 –28.2
800 0.51 –128.0 3.19 92.9 0.09 49.3 0.73 –35.9
2 1000 0.45 –146.3 2.65 82.3 0.10 50.4 0.71 –40.6
1200 0.41 –161.4 2.27 73.8 0.11 53.1 0.70 –45.1
1500 0.37 177.9 1.85 63.0 0.12 57.8 0.71 –52.3
1800 0.34 159.7 1.58 53.4 0.14 61.8 0.73 –60.0
2000 0.32 149.7 1.44 48.5 0.16 63.8 0.74 –64.9
100 0.79 –31.8 13.51 153.5 0.02 75.1 0.92 –13.4
300 0.54 –78.6 9.24 119.9 0.04 61.9 0.73 –26.4
500 0.40 –107.8 6.44 101.9 0.06 61.0 0.64 –31.1
800 0.30 –138.4 4.30 85.7 0.09 63.7 0.59 –36.3
8 5 1000 0.27 –153.8 3.50 77.8 0.10 65.0 0.58 –41.3
1200 0.25 –167.2 2.98 71.1 0.12 65.7 0.58 –45.8
1500 0.22 175.1 2.41 62.4 0.14 66.0 0.59 –53.2
1800 0.21 157.8 2.06 54.2 0.18 65.3 0.61 –60.6
2000 0.20 149.4 1.88 49.7 0.19 64.5 0.62 –65.5
100 0.63 –43.0 21.15 143.4 0.02 72.5 0.85 –18.5
300 0.35 –91.7 11.55 109.2 0.04 67.2 0.62 –28.0
500 0.25 –117.7 7.47 95.1 0.06 69.5 0.55 –30.6
800 0.20 –145.2 4.85 82.1 0.09 71.1 0.53 –36.4
10 1000 0.18 –160.0 3.93 75.5 0.11 71.1 0.52 –41.3
1200 0.17 –171.7 3.32 69.8 0.13 70.4 0.52 –45.9
1500 0.16 173.5 2.70 62.0 0.16 68.7 0.53 –53.7
1800 0.15 153.9 2.30 54.6 0.19 66.4 0.54 –61.4
2000 0.15 148.4 2.09 50.3 0.21 64.8 0.55 –66.5
BFR91A
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
4 (8) Document Number 85031
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.44 –55.8 28.24 132.6 0.02 72.8 0.76 –22.3
300 0.22 –103.9 12.79 102.0 0.04 74.1 0.54 –26.5
500 0.16 –127.5 8.00 90.7 0.06 75.8 0.50 –28.6
800 0.14 –153.3 5.13 79.8 0.09 75.4 0.49 –35.2
20 1000 0.13 –165.9 4.15 73.9 0.11 74.2 0.48 –40.4
1200 0.12 –177.3 3.51 68.7 0.13 72.9 0.49 –45.5
1500 0.12 170.1 2.84 61.5 0.17 70.0 0.50 –53.6
1800 0.12 152.3 2.42 54.4 0.20 67.1 0.51 –61.6
8
2000 0.11 147.1 2.21 50.6 0.22 65.0 0.52 –66.7
8
100 0.34 –64.0 31.01 127.3 0.02 73.3 0.71 –23.3
300 0.17 –112.9 13.08 99.1 0.04 77.2 0.52 –24.9
500 0.14 –136.2 8.10 88.9 0.06 77.8 0.49 –27.3
800 0.13 –159.4 5.17 78.7 0.09 76.8 0.48 –34.3
30 1000 0.12 –171.4 4.18 73.0 0.11 75.3 0.48 –39.6
1200 0.12 178.6 3.53 68.0 0.13 73.6 0.48 –45.0
1500 0.12 165.7 2.87 61.1 0.17 70.5 0.49 –53.3
1800 0.11 147.8 2.44 54.2 0.20 67.4 0.50 –61.3
2000 0.11 143.7 2.23 50.3 0.22 65.4 0.51 –66.6
BFR91A
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 5 (8)
Document Number 85031
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140 160
Tamb – Ambient Temperature ( °C )12845
P – Total Power Dissipation ( mW )
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
1000
2000
3000
4000
5000
6000
7000
0 1020304050
IC – Collector Current ( mA )12895
f – Transition Frequency ( MHz )
T
VCE=5V
f=500MHz
Figure 2. Transition Frequency vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )12896
C – Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30
IC – Collector Current ( mA )12897
F – Noise Figure ( dB )
VCE=8V
f=800MHz
ZS=50
W
Figure 4. Noise Figure vs. Collector Current
BFR91A
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
6 (8) Document Number 85031
VCE = V, IC = 30 mA , Z0 = 50
W
S11
13 518
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
1.0
0.1
0.3
Figure 5. Input reflection coefficient
S21
13 520
0°
90°
180°
–90°
20 40
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
0.1
0.3
Figure 6. Forward transmission coefficient
S12
13 519
0°
90°
180°
–90°
0.08 0.16
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
0.5
1.0
0.1
1.5
Figure 7. Reverse transmission coefficient
S22
13 521
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁ
ÁÁ
0.2
ÁÁ
ÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
1.0 0.1
0.3
Figure 8. Output reflection coefficient
BFR91A
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 7 (8)
Document Number 85031
Dimensions of BFR91A in mm
96 12244
BFR91A
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
8 (8) Document Number 85031
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
