HE PhotoMOS (AQV45
❍
, AQV454H)
TYPES
* Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X”and “Z” are omitted from the seal.
High sensitivity and low
on-resistance.
DIP (1 Form B) 6-pin type.
HE PhotoMOS
(AQV45
❍
,
AQV454H)
Type I/O isolation
Output rating* Part No.
Packing quantity
Load
voltage
Load
current
Through hole
terminal Surface-mount terminal
Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
1,500 V AC 250 V 200 mA AQV453 AQV453A AQV453AX AQV453AZ 1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
400 V 150 mA
AQV454 AQV454A AQV454AX AQV454AZ
Reinforced
5,000 V AC AQV454H AQV454HA AQV454HAX AQV454HAZ
TESTING (Standard type)(Standard type)
mm inch
8.8
.346 6.4
.252
3.9
.154
8.8
.346
6.4
.252
3.6
.142
1
2
3
6
5
4
FEATURES
1. Form B (Normally-closed) type
Has been realized thanks to the built-in
MOSFET processed by our proprietary
method, DSD (Double-diffused and
Selective Doping) method.
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.15 A load
current with a 5 mA input current. Low
ON resistance of 16 Ω (AQV454). Stable
operation because there are no metallic
contact parts.
4. Controls various types of load such
as relays, motors, lamps and
solenoids.
5. Eliminates the need for a power
supply to drive the power MOSFET
A power supply used to drive the power
MOSFET is unnecessary because of the
built-in optoelectronic device. This results
in easy circuit design and small PC board
area.
6. Low thermal electromotive force
(Approx. 1 µV) (Basic insulation)
7. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm .016 inch internal
insulation distance between inputs and
outputs. Conforms to IEC950 (reinforced
insulation).
TYPICAL APPLICATIONS
• Security equipment
• High-speed inspection machines
• Measuring instruments
• Telephone equipment
• Sensors
;;
;;
;
;;
;
;
;;
;
Source electrode
N–
N+
N+N+
P+N+N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
HE PhotoMOS (AQV45
❍
, AQV454H)
RATING
2. Electrical characteristics (Ambient temperature: 25
°
C 77
°
F)
Note: Recommendable LED forward current.
Standard type: I
F
= 5 mA
Reinforced type: I
F
= 5 to 10 mA
*Operate/Reverse time
■
■
■
Item Symbol
Type of
connec-
tion
AQV453(A) AQV454(A) AQV454H(A) Remarks
Input
LED operate (OFF)
current
Typical I
Foff
—1 mA 0.9 mA 1.4 mA I
L
= Max.
Maximum 3 mA
LED reverse (ON) current Minimum I
Fon
—0.4 mA I
L
= Max.
Typical 0.9 mA 0.8 mA 1.3 mA
LED dropout voltage Typical V
F
—1.25 V (1.14 V at I
F
=5 mA) I
F
= 50 mA
Maximum 1.5 V
Output
On resistance
Typical R
on
A5.5
Ω
12.4
Ω
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum 8
Ω
16
Ω
Typical R
on
B2.7
Ω
6.2
Ω
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum 4
Ω
8
Ω
Typical R
on
C1.4
Ω
3.1
Ω
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
Maximum 2
Ω
4
Ω
Off state leakage current Maximum I
Leak
—1
µ
A1
µ
A 10
µ
AI
F
= 5 mA
V
L
= Max.
Transfer
characteristics
Switching
speed
Operate
(OFF) time*
Typical T
off
—1.52 ms 1.2 ms 1.8 ms I
F
= 0 mA
➝
5 mA
I
L
= Max.
Maximum 3 ms 2.0 ms 3.0 ms
Reverse
(ON) time*
Typical T
on
—0.4 ms 0.36 ms 0.4 ms I
F
= 5 mA
➝
0 mA
I
L
= Max.
Maximum 1 ms
I/O capacitance Typical C
iso
—1.3 pF f = 1 MHz
V
B
= 0 V
Maximum 3 pF
Initial I/O isolation
resistance Minimum R
iso
— 1,000 M
Ω
500 V DC
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item Symbol
Type of
connec-
tion
AQV453(A) AQV454(A) AQV454H(A) Remarks
Input
LED forward current IF50 mA
LED reverse voltage VR5 V
Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Output
Load voltage (peak AC) VL250 V 400 V
Continuous load current IL
A 0.2 A 0.15 A A connection: Peak AC, DC
B,C connection: DC
B 0.3 A 0.18 A
C 0.4 A 0.25 A
Peak load current IPEAK 0.6 A 0.5 A A connection: 100 ms (1 shot),
VL = DC
Power dissipation POUT 360 mW
Total power dissipation PT410 mW
I/O isolation voltage Viso 1,500 V AC 5,000 V AC
Temperature
limits
Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low
temperatures
Storage Tstg –40°C to +100°C –40°F to +212°F
Toff
Input
Output 10%
90%
Ton
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
HE PhotoMOS (AQV45
❍
, AQV454H)
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
50
100
200
150
0204060
–20 8085100–40
Ambient temperature, °C
Load current, mA
AQV453
AQV454(H)
0
8
10
12
14
–40
16
0–20 20 40 60 8085
Ambient temperature, °C
On resistance, Ω
AQV454(H)
AQV453
0
2
3
–40
5
0–20 20 40 60 8085
1
4
AQV454H
Ambient temperature, °C
Operate (OFF) time, ms
AQV453
AQV454
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate (OFF) current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED reverse (ON) current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.5
1.0
2.0
2.5
–40 0–20 20 40 60 8085
AQV454H
AQV454, AQV453
1.5
Ambient temperature, °C
Reverse (ON) time, ms
0
1
2
3
4
–40
5
0–20 20 40 60 8085
AQV454H
Ambient temperature, °C
LED operate (OFF) current, mA
AQV454
AQV453
0
1
2
3
4
–40
5
0–20 20 40 60 80
AQV454H
AQV454
AQV453
Ambient temperature, °C
LED reverse (ON) current, mA
7. LED dropout voltage vs. ambient
temperature characteristics
LED current: 5 to 50 mA
8. Current vs. voltage characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
9. Off state leakage current vs. load voltage
characteristics
Sample: AQV454;
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
0
1.0
1.1
1.2
1.3
–40 0–20 20 40 60 80 85
1.4
50mA
30mA
20mA
10mA
5mA
1.5
Ambient temperature, °C
LED dropout voltage, V
–3
200
160
120
80
40
–200
–160
–120
–80
–40
0
AQV453
AQV454(H)
1 2 3
–2 –1 0
Voltage, V
Current, mA
060 100
10–3
10–6
10–9
10–12
20 40 80
Load voltage, V
Off state leakage current, A
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
0
2
4
6
10
8
10 20 30 40 50 60
AQV454, AQV453
AQV454H
LED forward current, mA
Opperate (OFF) time, ms
0
0.2
0.4
0.8
0.6
10 20 30 40
1.0
50 60
AQV454H
LED forward current, mA
Reverse (ON) time, ms
AQV454, AQV453
Applied voltage, V
Output capacitance, pF
0
100
400
300
200
10 20 30 40 500
AQV453
AQV454(H)
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
