BAV70 / BAV74
BAV70/74, Rev. C
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
BAV70 / 74
MARKING
BAV70 A4 BAV74 JA
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage BAV70
BAV74 70
50 V
V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
12
3
A4
Connection Diagram
12
3
3
1
2
SOT-23
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage BAV70
BAV74
IR = 100 µA
IR = 100 µA 70
50 V
V
VF Forward Voltage BAV70
BAV74
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IF = 100 mA
715
855
1.0
1.25
1.0
mV
mV
V
V
V
IR Reverse Current BAV70
BAV74
VR = 25 V, TA = 150°C
VR = 70 V
VR = 70 V, TA = 150°C
VR = 50 V
VR = 50 V, TA = 150°C
60
5.0
100
100
100
µA
µA
µA
nA
µA
CT Tatal Capacitance BAV70
BAV74
VR = 0, f = 1.0 MHz
VR = 0, f = 1.0 MHz 1.5
2.0 pF
pF
trr Reverse Recovery Time BAV70
BAV74
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω
6.0
4.0
ns
ns
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