MBR20H90CTG & MBR20H100CTG Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES * Guardring for overvoltage protection TO-220AB * Lower power losses, high efficiency * Low forward voltage drop * Low leakage current * High forward surge capability 2 MBR20H90CTG MBR20H100CTG PIN 1 PIN 2 PIN 3 CASE 3 * High frequency operation 1 * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 10 A x 2 VRRM 90 V, 100 V IFSM 150 A VF 0.70 V IR 3.5 A TJ max. 175 C MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR20H90CTG MBR20H100CTG UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Peak repetitive reverse current per diode at tp = 2 s, 1 kHz IRRM 0.5 A dV/dt 10 000 V/s TJ, TSTG - 65 to + 175 C Maximum average forward rectified current at TC = 155 C Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 88856 Revision: 25-Mar-08 total device per diode For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 MBR20H90CTG & MBR20H100CTG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 10 A IF = 10 A IF = 20 A IF = 20 A Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode at working peak reverse voltage (1) SYMBOL TYP. MAX. UNIT TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C VF 0.80 0.64 0.87 0.74 0.85 0.70 0.93 0.80 V TJ = 25 C TJ = 125 C IR - 3.5 4.5 A mA Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR UNIT RJC 2.0 C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (G) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20H100CTG-E3/45 1.85 45 50/tube Tube TO-220AB MBR20H100CTGHE3/45 (1) 1.85 45 50/tube Tube Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 175 Peak Forward Surge Current (A) Average Forward Current (A) 24 20 16 12 8 4 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 150 125 100 75 50 25 0 0 www.vishay.com 2 25 50 75 100 125 150 175 1 100 10 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88856 Revision: 25-Mar-08 MBR20H90CTG & MBR20H100CTG Vishay General Semiconductor 1000 TJ = 175 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 C 10 1 TJ = 125 C TJ = 100 C 0.1 TJ = 25 C 100 TJ = - 40 C 0.01 0.1 10 0.3 0.5 0.7 0.1 1.1 0.9 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 10 000 TJ = 150 C 1000 TJ = 125 C 100 TJ = 100 C 10 1 TJ = 25 C 0.1 40 60 80 1 0.1 0.01 0.01 20 10 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) Document Number: 88856 Revision: 25-Mar-08 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000