V
RM
=
6500
V
IT
(
AV
)
M
=
1580 A
IT
(
RMS
)
=
2480 A
ITSM
=
29.7×103 A
V
T0
=
1.2
V
rT
=
0.458 m
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-03 Aug. 10
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for energy management and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values 1)
Parameter Symbol Conditions 5STB 18U6500 Unit
Max. surge peak forward
blocking voltage VSM t
p = 10 ms, f = 5 Hz
Tvj = 5…110°C, Note 1 6500 V
Max repetitive peak forward
blocking voltage
VRM 6500 V
Max crest working forward
voltages VWM
f = 50 Hz, tp = 10 ms, tp1 = 250 s,
Tvj = 5…110°C, Note 1
3300 V
Critical rate of rise of off-
state voltage dv/dtcrit Exp. to 3750 V, Tvj = 110°C 2000 V/s
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max reverse leakage
current IR(M) V
RM, Tvj = 110 °C 600 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C
/ V or V / V = 2. See App. Note 5SYA 2051. Note 2: Recommended minimum ratio of VDRM DWM RRM RWM
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM 120 135 160 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 3.6 kg
Housing thickness H FM = 135 kN, Ta = 25 °C 34.8 35.5 mm
Surface creepage distance DS 53 mm
Air strike distance Da 22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STB 18U6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-03 Aug. 10 page 2 of 7
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 1580 A
RMS on-state current IT(RMS) 2480 A
RMS on-state current IT(RMS) Full sine wave, Tc = 70 °C 3510 A
Peak non-repetitive surge
current ITSM 29.7×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 110 °C, sine wave
after surge:VD = VR= 0 V 4.40×106A2s
Peak non-repetitive surge
current ITSM 31.8×103A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 110 °C, sine wave
after surge: VD = VR= 0 V 4.19×106A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VT I
T = 1600 A, Tvj = 110 °C 1.93 V
Threshold voltage VT0 1.2 V
Slope resistance rT IT = 1000 A - 3000 A, Tvj= 110 °C 0.458
m
Holding current IH T
vj = 25 °C 125 mA
T
vj = 110 °C 75 mA
Latching current IL T
vj = 25 °C 600 mA
T
vj = 110 °C 500 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz 250 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 110 °C,
ITRM = 2000 A,
VD 3750 V,
IFG = 2 A, tr = 0.5 µs Cont.
f = 1Hz 1000 A/µs
Circuit commutated turn-off
time tq T
vj = 110 °C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD 0.67VRM, dvD/dt = 20 V/µs,
800 µs
Critical rate of rise of
commutating voltage dv/dtcom Tvj = 110 °C, VR 0.67VRM 500 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Reverse recovery charge Qrr 2100 3500 µAs
Reverse recovery current IRM Tvj = 110 °C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs 48 70 A
Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4VRM, IFG = 2 A,
tr = 0.5 µs 3 µs
5STB 18U6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Max. rated peak forward
gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Max. rated gate power loss PG For DC gate current 3 W
Max. rated peak forward
gate power PGM(AV) see Fig. 9 W
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate trigger voltage VGT T
vj = 25 °C 2.6 V
Gate trigger current IGT T
vj = 25 °C 400 mA
Gate non-trigger voltage VGD V
D = 0.4 x VRM, Tvj = 110 °C 0.3 V
Gate non-trigger current IGD V
D = 0.4 x VRM 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range Tvj 110 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Rth(j-c) Double-side cooled
Fm = 120...160 kN 8.5 K/kW
Thermal resistance junction
to case
(Valid for one thyristor half
no heat flow to the second
half.)
Rth(j-c) Single-side cooled
Fm = 120...160 kN 17 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 120...160 kN 1.6 K/kW
R
th(c-h) Single-side cooled
Fm = 120...160 kN 3.2 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
i c)-th(j
i
i 1 2 3 4
Ri(K/kW) 5.748 1.731 0.688 0.333
i(s) 0.9531 0.1240 0.0144 0.0031
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
Doc. No. 5SYA1037-03 Aug. 10 page 3 of 7
5STB 18U6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Max. on-state characteristic model:
VT25 TTvjTTvjTTvjTvj IDICIBA )1ln(
Valid for IT = 400 – 18000 A
Max. on-state characteristic model:
VT110 TTvjTTvjTTvjTvj IDICIBA )1ln(
Valid for IT = 400 – 18000 A
A25 B
25 C
25 D
25 A110 B
110 C
110 D
110
278.1×10-6 87.42×10-6 172.0×10-3 13.54×10-3 442.3×10-6 169.2×10-6 125.0×10-3 18.39×10-3
Doc. No. 5SYA1037-03 Aug. 10 page 4 of 7
Fig. 2 On-state voltage characteristics
Fig. 3 On-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current. Switching losses excluded. Fig. 5 Max. permissible case temperature vs. mean
on-state current. Switching losses ignored.
5STB 18U6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
IGM
IGon
100 %
90 %
10 %
IGM 2..5 A
IGon 1.5 IGT
diG/dt 2 A/s
tr 1 s
tp(IGM) 5...20 s
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss
Fig. 10 Reverse recovery charge vs. decay rate of
on-state current Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current
Doc. No. 5SYA1037-03 Aug. 10 page 5 of 7
5STB 18U6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Turn-on and Turn-off losses
Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves
Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves
Qrr
IT(t), V(t)
t
-diT/dt
IT(t)
-V0
-VRM
V(t)
-IRM
dv/dtcom
Total power loss for repetitive waveforms:
fWfWPP offonTTOT
where
dtIVI
T
PT
TTTT
0)(
1
Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss
Doc. No. 5SYA1037-03 Aug. 10 page 6 of 7
5STB 18U6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Fig. 18 Device Outline Drawing
Related documents:
5SYA 2020 Design of RC-Snubber for Phase Control Applications
5SYA 2049 Voltage definitions for phase control thyristors and diodes
5SYA 2051 Voltage ratings of high power semiconductors
5SYA 2034 Gate-Drive Recommendations for PCT's
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd Doc. No. 5SYA1037-03 Aug. 10
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
