Data Sheet
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Shottky barrier diode
RB715W
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
Construction Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C) Symbol Unit
VRM V
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit
VF- - 0.37 V IF=1mA
IR--1μAVR=10V
Ct - 2.0 - pF VR=1.0V f=1.0MHz
Capacitance between terminals
Conditions
(*1) Rating of per diode
Parameter
Forward voltage
Reverse current
Junction temperature 125
Storage temperature 40 to 125
Average rectified forward current 30
Forward current surge peak (60Hz・1cyc) (*1) 200
Parameter Limits
Reverse voltage (DC) 40
Reverse voltage (repetitive peak) 40
4.0±0.1 2.0±0.05 φ1.55±0.1
　　　　　 0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0～0.1
φ1.5 0.1
0
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5 0.5
(2) (1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0～0.1
0.2±0.1
　　-0.05
0.3±0.1
　　　 0.05
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
1/3 2011.04 - Rev.C
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Data Sheet
RB715W
0
5
10
15
20
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0 500 1000 1500
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0.01
0.1
1
10
100
1000
0 102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm 1cyc
0
1
2
3
4
5
6
7
8
9
10
1 10 100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
Per diode
Sin(θ＝180)
D=1/2
DC
0
0.001
0.002
0.003
0102030
Per diode
Sin(θ＝180)
DC
D=1/2
0.1
1
10
0102030
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25℃
IF=1mA
n=30pcs
10
100
1000
10000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.083nA
Ta=25℃
VR=10V
n=30pcs
0
1
2
3
4
5
6
7
8
9
10
AVE:2.02pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
2/3 2011.04 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB715W
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Per diode
Sin(θ＝180)
D=1/2
DC
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Per diode
Sin(θ＝180)
D=1/2
DCTTj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
T Tj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
3/3 2011.04 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes