APM2556NU N-Channel Enhancement Mode MOSFET Features * Pin Description 25V/60A, RDS(ON)=4.5m (typ.) @ VGS=10V RDS(ON)=7.5m (typ.) @ VGS=4.5V * * * G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available (RoHS Compliant) D Applications * G Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 150 C Handling Code TR : Tape & Reel Assembly Material L : Lead Free Device G : Halogen and Lead Free Device APM2556N Assembly Material Handling Code Temperature Range Package Code APM2556N U : APM2556N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 1 www.anpec.com.tw APM2556NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage 20 Maximum Junction Temperature 150 C -55 to 150 C 40 A TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300s Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation TC=25C 160 TC=100C 90 TC=25C 60* TC=100C 48 TC=25C 50 TC=100C 20 V A A W RJC Thermal Resistance-Junction to Case 2.5 C/W RJA Thermal Resistance-Junction to Ambient 50 C/W EAS Drain-Source Avalanche Energy, L=0.5mH 225 mJ Notes: * Current limited by bond wire. Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS Zero Gate Voltage Drain Current VGS=0V, IDS=250A VGS=20V, VDS=0V Reverse Recovery Charge Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 Min. Typ. Max. 25 1 30 1.3 1.8 V 100 nA 4.5 5.7 VGS=4.5V, IDS=20A 7.5 10 ISD=40A, VGS=0V 0.7 1.1 2 A 2.5 VGS=10V, IDS=40A IDS=40A, dlSD/dt=100A/s Unit V TJ=85C Gate Leakage Current Reverse Recovery Time APM2556NU VDS=20V, VGS=0V VDS=VGS, IDS=250A Diode Characteristics VSDa Diode Forward Voltage Qrr Test Conditions Gate Threshold Voltage RDS(ON) a Drain-Source On-state Resistance trr (TA = 25C) m V 28 ns 14 nC www.anpec.com.tw APM2556NU Electrical Characteristics (Cont.) Symbol Parameter Gate Charge Characteristics Qg Total Gate Charge (TA = 25C) Test Conditions APM2556NU Min. Typ. Max. 25 35 Unit b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=40A nC 6 16 b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V, F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 Turn-off Fall Time 0.5 1.3 2.6 2230 2900 pF 485 435 16 30 18 33 58 105 32 59 ns Notes: a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 3 www.anpec.com.tw APM2556NU Typical Characteristics Drain Current Power Dissipation 60 70 60 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 10 50 40 30 20 10 o 0 o TC=25 C 0 0 20 40 60 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance 400 2 Normalized Effective Transient 1 Lim it 1ms Rd s(o n) ID - Drain Current (A) 100 10ms 100ms 10 1s DC 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 Mounted on 1in pad o RJA :50 C/W O TC=25 C 0.1 0.01 0.1 1 10 1E-3 1E-4 100 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 1E-3 4 www.anpec.com.tw APM2556NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 160 13 VGS= 5,5.5,6,7,8,9,10V 12 4.5V 120 ID - Drain Current (A) RDS(ON) - On - Resistance (m) 140 100 4V 80 60 3.5V 40 3V 20 11 VGS=4.5V 10 9 8 7 6 VGS=10V 5 4 3 2 0 0.0 0.5 1.0 1.5 2.0 2.5 1 3.0 0 20 40 60 80 100 120 140 160 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 18 IDS =250A 16 Normalized Threshold Vlotage RDS(ON) - On - Resistance (m) ID=40A 14 12 10 8 6 4 1.2 1.0 0.8 0.6 0.4 2 0 1.4 2 3 4 5 6 7 8 9 0.2 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 0 5 www.anpec.com.tw APM2556NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 160 2.0 VGS = 10V 100 IDS = 40A 1.6 o Tj=150 C 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 10 1 0.2 o RON@Tj=25 C: 4.5m 0.0 -50 -25 0 25 50 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 10 4000 Frequency=1MHz VDS= 15V 9 I = 40A D VGS - Gate-source Voltage (V) 3500 C - Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 500 0 Coss Crss 8 7 6 5 4 3 2 1 0 5 10 15 20 0 25 10 20 30 40 50 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 0 6 www.anpec.com.tw APM2556NU Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01 tAV Avalanche Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% tp VGS td(on) tr Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 7 td(off) tf www.anpec.com.tw APM2556NU Package Information TO-252 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L VIEW A TO-252 S Y M B O L MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 MILLIMETERS INCHES 0.005 0.13 A1 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 0.024 c 0.46 0.61 0.018 c2 0.46 0.89 0.018 0.035 0.245 D 5.33 6.22 0.210 D1 4.57 6.00 0.180 0.236 E 6.35 6.73 0.250 0.265 E1 3.81 6.00 0.150 0.236 9.40 10.41 0.370 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 e H 2.29 BSC 0 0.410 0.040 1.02 L4 0 0.090 BSC 8 0 8 Note : Follow JEDEC TO-252 . Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 8 www.anpec.com.tw APM2556NU Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H T1 C d D 330.0 2.00 50 MIN. P0 P1 P2 D0 D1 4.00.10 8.00.10 2.00.05 1.5+0.10 -0.00 1.5 MIN. TO-252 W E1 F 16.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. 20.2 MIN. 16.00.30 1.750.10 7.500.05 T A0 0.6+0.00 6.800.20 -0.40 B0 K0 10.40 2.500.20 0.20 (mm) Devices Per Unit Package Type Unit Quantity TO-252 Tape & Reel 2500 Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 9 www.anpec.com.tw APM2556NU Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat t 25 C to Peak 25 Time Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 Description 245C, 5 SEC 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 217C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 10 www.anpec.com.tw APM2556NU Classification Reflow Profiles (Con.) Table 1. SnPb Eutectic Process - Package Peak Reflow Temperatures 3 Package Thickness Volume mm <350 <2.5 mm 240 +0/-5C 2.5 mm 225 +0/-5C 3 Volume mm 350 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindian City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2008 11 www.anpec.com.tw