6MBP75TEA120 - Fuji Electric

Econo IPM series 1200V / 75A 6 in one-package

6MBP75TEA120

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Symbol Rating Unit

Min. Max.

Bus voltage DC

Surge

Short operating

Collector-Emitter voltage *1

Collector current DC

1ms

DC

Collector power dissipation One transistor *3

Supply voltage of Pre-Driver *4

Input signal voltage *5

Input signal current

Alarm signal voltage *6

Alarm signal current *7

Junction temperature

Operating case temperature

Storage temperature

Solder temperature *8

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque Mounting (M5)

VDC

VDC(surge)

VSC

VCES

IC

ICP

-IC

PC

VCC

Vin

Iin

VALM

IALM

Tj

Topr

Tstg

Tsol

Viso

Item

0

400

0

-

-0.5

-

-0.5

-

-20

-40

-

900

1000

800

1200

75

150

75

368

20

Vcc+0.5

3

Vcc

20

150

100

125

260

AC2500

3.5

V

A

W

V

mA

V

mA

°C

V

N·m

Inverter

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W , N and U or V or W

*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.34=368W [Inverter]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

*8 : Immersion time 10±1sec.

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6MBP75TEA120 IGBT-IPM

Control circuit

Item Symbol Condition Min. Typ. Max. Unit

Supply current of P-line side pre-driver(one unit)

Supply current of N-line side pre-driver

Input signal threshold voltage (on/off)

Input zener voltage

Alarm signal hold time

Current limit resistor

Switching Frequency : 0 to 15kHz

Tc=-20 to 125°C Fig.7

ON

OFF

Rin=20k ohm

Tc=-20°C Fig.2

Tc=25°C Fig.2

Tc=125°C Fig.2

Alarm terminal

Iccp

ICCN

Vin(th)

VZ

tALM

RALM

-

1.00

1.25

-

1.1

-

1425

-

1.35

1.60

8.0

-

2.0

-

1500

15

45

1.70

1.95

-

4.0

1575

mA

V

ms

ohm

Protection Section ( Vcc=15V)

Turn-on time

Turn-off time

Reverse recovery time

ton VDC=600V,Tj=125°C

toff IC=75A Fig.1, Fig.6

trr VDC=600V, IF=75A Fig.1, Fig.6

Thermal characteristics( Tc=25°C)

Item Symbol Min. Typ. Max. Unit

Junction to Case thermal resistance *9

Case to fin thermal resistance with compound

Rth(j-c)

Rth(c-f)

- - 0.34

- - 0.61

- 0.05 -

°C/W

Inverter IGBT

FWD

Item Symbol Min. Typ. Max. Unit

DC Bus Voltage

Operating Supply Voltage of Pre-Driver

Screw torque (M5)

VDC

VCC

-

Recommendable value

Over Current Protection Level of Inverter circuit

Over Current Protection Delay time

SC Protection Delay time

IGBT Chip Over Heating

Protection Temperature Level

Over Heating Protection Hysteresis

Under Voltage Protection Level

Under Voltage Protection Hysteresis

Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)

Main circuit

Item Symbol Condition Min. Typ. Max. Unit

Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of FWD

ICES

VCE(sat)

VF

VCE=1200V Vin terminal open.

Ic=75A

-Ic=75A

Terminal

Chip

Terminal

Chip

IOC

tDOC

tSC

TjOH

TjH

VUV

VH

Tj=125°C

Tj=125°C Fig.4

Surface of IGBT chips

113 - -

-5-

--8

150 - -

-20 -

11.0 - 12.5

0.2 0.5 -

A

µs

°C

V

Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)

Common mode rectangular noise

Common mode lightning surge

Pulse width 1µs, polarity ±,10minuets

Judge : no over-current, no miss operating

Rise time 1.2µs, Fall time 50µs

Interval 20s, 10 times

Judge : no over-current, no miss operating

±2.0 - -

±5.0 - -

Item Symbol Condition Min. Typ. Max. Unit

Item Condition Min. Typ. Max. Unit

kV

- - 800 V

13.5 15.0 16.5 V

2.5 - 3.0 Nm

Item Symbol Min. Typ. Max. Unit

Weight

Weight Wt - 270 - g

Inverter

- - 1.0 mA

- - 3.1 V

- 2.2 -

- - 2.0 V

- 1.6 -

1.2 - - µs

- - 3.6

- - 0.3

*9 : (For 1 device, Case is under the device)

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6MBP75TEA120 IGBT-IPM

Figure 1. Switching Time Waveform Definitions

Figure 2. Input/Output Timing Diagram

Figure.4 Definition of tsc

Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit

Figure 6. Switching Characteristics Test Circuit

Ic Ic

IALM

tsc

IALM IALM

Ic

Ic Ic

IALM

tsc

IALM IALM

Ic

/Vin

Vge (Inside IPM )

Faul t (I nside IP M )

/ALM

Gate Off

on

Gate On

2ms (typ.)

off

normal

tALMMax. tALM > Max.

off

Faul t : Over-c urrent ,Over -heat or Under-voltage

on

alarm

tALM > 123

/Vin

Vge (Inside IPM )

Faul t (I nside IP M )

/ALM

Gate Off

on

Gate On

2ms (typ.)

off

normal

tALMMax. tALM > Max.

off

Faul t : Over-c urrent ,Over -heat or Under-voltage

on

alarm

tALM > 123

On

ton

Vin

Ic

Vin(th)

50%

toff

10%

trr 90%

90%

On

ton

Vin

Ic

Vin(th)

50%

toff

10%

trr 90%

90%

Vin

DC

15V

DC

300V

N

+

L

IPM

Ic

P

HCPL-

4504

Vcc

GND N

+

IPM

P

-

20k

Vin

DC

15V

DC

300V

N

+

L

IPM

Ic

P

HCPL-

4504

Vcc

GND N

+

IPM

P

-

20k

AVcc

Vin

GND

Icc P

U

V

W

N

P.G

+8V

fsw

IPM

DC

15V

AVcc

Vin

GND

Icc P

U

V

W

N

P.G

+8V

fsw

IPM

DC

15V

VccU

DC

15V

+

IPM

P

U

V

W

N

20k VinU

GNDU

SW1

Vcc

DC

15V

20k VinX

GND

SW2

Cooling

Fin

Earth

AC200V

4700p Noise

CT

VccU

DC

15V

+

IPM

P

U

V

W

N

20k VinU

GNDU

SW1

Vcc

DC

15V

20k VinX

GND

SW2

Cooling

Fin

Earth

AC200V

4700p Noise

CT

AC400V

600V

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6MBP75TEA120 IGBT-IPM

Block diagram

Outline drawings, mm

Mass : 270g

Pre-drivers include following functions

1.Amplifier for driver

2.Short circuit protection

3.Under voltage lockout circuit

4.Over current protection

5.IGBT chip over heating protection

U

V

W

Vcc

VinX

GND

VinY

VinZ

ALM

B

N

VinDB

VccW

A

LMW

GNDW

VccV

ALMV

GNDV

P

VccU

ALMU

GNDU

VinU

VinV

VinW

Pre- Driv er

Vz

RALM 1.5k

RALM 1.5k Vz

Vz

RALM 1.5k

Pre- Driv erPre- Driv er

4

3

2

1

8

6

5

7

12

11

10

9

14

16

13

17

18

15

19

U

V

W

Vcc

VinX

GND

VinY

VinZ

ALM

B

N

VinDB

VccW

A

LMW

GNDW

VccV

ALMV

GNDV

P

VccU

ALMU

GNDU

VinU

VinV

VinW

Pre- Driv er

Vz

RALM 1.5k

RALM 1.5k Vz

Vz

RALM 1.5k

Pre- Driv erPre- Driv er

44

3

2

1

8

6

5

7

12

11

10

9

14

16

13

17

18

15

19

Package type : P622

Dimensions in mm

MB CF M

NC

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IGBT-IPM

Characteristics

Control circuit characteristics (Representative)

6MBP75TEA120

0

10

20

30

40

50

0 5 10 15 20 25

Power supply current vs. S witching frequency

Tc=125°C (typ.)

N-side

P-side

Power s u p ply cu rr ent : Ic c (m A )

Switching frequency : fsw (kHz)

Vcc=13V

Vcc=15V

Vcc=17V

0

0.5

1

1.5

2

2.5

12 13 14 15 16 17 18

Inpu t signal thr eshold vol tage

vs. Power supply vol t age (typ. )

Input signal threshold voltage

: Vin(on),Vin(off) (V)

Power supply voltage : Vcc (V)

Tj=25°C

Tj=125°C

} Vin(on)

} Vin (off)

0

2

4

6

8

10

12

14

20 40 60 80 100 120 140

Under voltage vs. Junction temper atur e ( t y p.)

Under voltage : VUVT (V)

Junc tion temperatu re : Tj (°C)

0

0.2

0.4

0.6

0.8

1

20 40 60 80 100 120 140

U nder volt age hys ter is is vs . Jnc t ion temp er a tur e (t yp. )

Un d e r volta g e hys terisis : VH (V )

Junc tion temperature : Tj ( ° C)

0

0.5

1

1.5

2

2.5

3

12 13 14 15 16 17 18

Al arm hold tim e v s. P ower supply volt age ( typ.)

Alarm hold time : tALM (mSec)

Power supply voltage : Vcc (V)

Tc=100°C

Tc=25°C

0

50

100

150

200

12 13 14 15 16 17 18

Over heating characteristics

TjOH,TjH vs. Vcc (typ.)

Over heating protection : TjOH (°C)

O H hy sterisis : TjH (° C)

Pow er supp ly voltage : Vcc (V)

TjOH

TjH

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6MBP75TEA120 IGBT-IPM

Main circuit characteristics (Representative)

0

25

50

75

100

125

150

0 0.5 1 1.5 2 2.5 3 3.5 4

Collect or cur r ent vs. Collector-Emitt er voltage (typ.)

Tj=25°C(Chip)

Vcc=13V

Vcc=15V

Vcc=17V

C o l lec to r C u rre n t : Ic ( A )

C o l le c to r - E m i tt e r vo ltag e : V c e ( V)

0

25

50

75

100

125

150

0 0.5 1 1.5 2 2.5 3 3.5 4

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25°C(Terminal)

Vcc=13V

Vcc=15V

Vcc=17V

Colle c tor Cu rre n t : Ic (A)

C o l le c to r - E m i tt e r vo ltag e : V c e ( V)

0

25

50

75

100

125

150

00.511.522.533.54

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125°C(Chip)

Vcc=13V

Vcc=15V

Vcc=17V

Colle ctor Current : Ic (A)

Colle ctor-Emitter volt age : Vce (V)

0

25

50

75

100

125

150

0 0.5 1 1.5 2 2.5 3 3.5 4

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125°C(Terminal)

Vcc=13V

Vcc=15V

Vcc=17V

Colle ctor Current : Ic (A)

C o l le c to r - E m i tt e r vo ltag e : V c e ( V)

0

25

50

75

100

125

150

0 0.5 1 1.5 2 2.5

Forward current vs. Forward volt age (typ.)

(Chip)

125°C

25°C

Forward Current : If (A)

Forward voltage : Vf (V)

0

25

50

75

100

125

150

00.511.522.5

Forward current v s. Forward v ol t age (typ. )

(Terminal)

125°C

25°C

Forward Current : If (A)

Forward voltage : Vf (V)

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6MBP75TEA120 IGBT-IPM

0

5

10

15

20

25

30

35

0 255075100125

Swit ching Loss v s. Coll ec tor Current (typ. )

Edc=600V,Vcc=15V,Tj=125°C

Eon

Eoff

Err

Switching loss : Eon,Eoff,Err (mJ/cy cl e )

Colle ctor c urrent : Ic (A)

0

100

200

300

400

500

0 20 40 60 80 100 120 140 160

Power derating for IGBT (max.)

(per device)

Coll e ct er Power Dissipa tion : Pc (W)

Case Tem per ature : Tc (°C)

0

50

100

150

200

250

0 20 40 60 80 100 120 140 160

Power derating for FWD ( max.)

(per devi ce)

Collecter Power Dis sipation : Pc (W)

Case Tem perature : Tc (°C)

0

100

200

300

400

500

600

700

0 200 400 600 800 1000 1200 1400

Reversed biased safe operating area

Vc c =1 5 V, Tj<= 1 25 °C (m in .)

C ollecto r current : Ic (A)

Coll ector-Em itter voltage : Vce (V)

SCSOA

(non-repetitive pulse )

RBSOA

(Repe titive pulse) 0.01

0.1

1

0.001 0.01 0.1 1

Transi ent therm al resistance (m ax .)

Thermal res istance : Rth(j-c) (°C/W)

Pulse width :Pw ( s ec)

FWD

IGBT

0

5

10

15

20

25

30

35

0 25 50 75 100 125

Switchi ng Loss v s. Collector Current (typ.)

Edc=600V,Vcc=15V,Tj=25°C

Eon

Eoff

Err

Switch ing los s : Eon,Eoff,Err (mJ/c yc le)

C ollector c urrent : Ic (A )

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6MBP75TEA120 IGBT-IPM

1

10

100

0 20 40 60 80 100 120 140

Rever se recovery c harac teristics (t yp.)

trr,Irr vs.IF

Re vers e re cover y current :Irr (A)

Reverse recovery time :trr(nsec)

Forward current:IF(A)

trr125°C

trr25°C

Irr125°C

Irr25°C

10

100

1000

10000

0 20 40 60 80 100 120 140

Switching tim e vs. Collector current (typ.)

Edc=600V,Vcc=15V,Tj=25°C

Switching time : ton,toff,tf (nSec)

Collector current : Ic (A)

toff

ton

tf

10

100

1000

10000

020406080100120140

Switching tim e vs. Collector current (typ.)

Edc=600V,Vcc=15V,Tj=125°C

Sw itching time : ton,toff,tf (nSec )

Collector current : Ic (A)

toff

ton

tf

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