BLL6G1214LS-250 - NXP Semiconductors

1. Product profile

1.1 General description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to

1.4 GHz range.

1.2 Features and benefits

T yp ical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply volt age

of 36 V, an IDq of 150 m A, a tp of 1 ms with  of 10 %:

Output power = 250 W

Power gain = 15 dB

Efficiency = 45 %

Easy power control

Integrated ESD protection

High flexibility with respect to pulse formats

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (1.2 GHz to 1.4 GHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances

(RoHS)

1.3 Applications

L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency

range

BLL6G1214L-250

LDMOS L-band radar power transistor

Rev. 1 — 16 February 2012 Preliminary data sheet

Table 1. Test information

Typical RF performance at Tcase =25



C; tp = 1 ms;



= 10 %; IDq = 150 mA; in a class-AB

production test circuit.

Test signal f VDS PLGpDtrtf

(GHz) (V) (W) (dB) (%) (ns) (ns)

pulsed RF 1.2 to 1.4 36 250 15 45 15 5

Preliminary data sheet Rev. 1 — 16 February 2012 2 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

2. Pinning information

[1] Connected to flange

3. Ordering information

4. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain

2gate

3source [1]

sym112

Table 3. Ordering information

Type number Package

Name Description Version

BLL6G1214L-250 - flanged LDMOST ceramic package;

2 mounting holes; 2 leads SOT502A

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 89 V

VGS gate-source voltage 0.5 +11 V

IDdrain current - 59 A

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Preliminary data sheet Rev. 1 — 16 February 2012 3 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

5. Thermal characteristics

[1] Zth(j-c) values are calculated from results obtained with ANSYS simulations and confirmed with

IR measurements during development stage. During production: guaranteed by design.

6. Characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-case) thermal resistance from

junction to case Tcase =85C; PL= 250 W 0.244 K/W

Zth(j-c) transient thermal impedance

from junction to case Tcase =85C; PL=250W [1]

tp= 1000 s; = 10 % 0.124 K/W

tp= 100 s; = 10 % 0.059 K/W

tp= 200 s; = 10 % 0.077 K/W

tp= 300 s; = 10 % 0.088 K/W

tp= 100 s; = 20 % 0.078 K/W

Table 6. DC Characteristics

Tj = 25



Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 3.36 mA 91.5 - 105.5 V

VGS(th) gate-source threshold voltage VDS = 20 V; ID= 336 mA 1.4 1.9 2.4 V

IDSS drain leakage current VGS =0V; V

DS =42V--4.2A

IDSX drain cut-off current VGS =V

GS(th) + 3.75 V;

VDS =10V 50 59 - A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 420 nA

gfs forward transconductance VDS =10V; I

D= 336 mA 51.6 - - mS

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID=11.7A --127m

Ciss input capacitance VGS = 0 V; VDS =40V;

f=1MHz - 285 - pF

Coss output capacitance VGS = 0 V; VDS =40V;

f=1MHz -90-pF

Crss reverse transfer capacitance VGS = 0 V; VDS =40V;

f=1MHz -3-pF

Table 7. RF characteristics

Test signal: pulsed RF; tp = 1 ms;



= 10 %; RF performance at VDS =36V; I

Dq = 150 mA;

Tcase =25



C; unless otherwise specified, in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-sourc e vol tage - - 36 V

IDq quiescent drain current No RF applied - 150 - mA

PLoutput pow er 250 - - W

frange frequency range 1200 - 1400 MHz

tppulse duration =10% - - 1 ms

=20% - - 100 s

Preliminary data sheet Rev. 1 — 16 February 2012 4 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

[1] The rise and fall time of the input circuit will be 5 ns maximum.

6.1 Ruggedness in class-AB operation

The BLL6G1214L-250 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =36V;

IDq =150mA; P

L=250W; t

p = 1 ms;  = 10 %.

7. Application information

7.1 Graphs

Ddrain efficiency 42 45 - %

trrise time PL= 250 W [1] --200ns

tffall time PL= 250 W [1] --200ns

Gppower gain 13 15 - dB

Pdroop(pulse) pulse droop power - - 0.6 dB

RLin input return loss - - 8dB

Table 7. RF characteristics …continued

Test signal: pulsed RF; tp = 1 ms;



= 10 %; RF performance at VDS =36V; I

Dq = 150 mA;

Tcase =25



C; unless otherwise specified, in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

tp = 100 s;  = 10 %; Th = 25 C.

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

tp = 100 s;  = 10 %; Th = 25 C.

(1) f = 120 0 MHz

(2) f = 130 0 MHz

(3) f = 140 0 MHz

Fig 1. Power gain as a function of output power;

typical valu e s Fig 2. Drain efficiency as a function of output power;

typical values

PL (W)

0 400300100 200

aaa-002251

(dB)

(1)

(2)

(3)

PL (W)

0 400300100 200

aaa-002252

ηD

(%)

(1)

(2)

(3)

Preliminary data sheet Rev. 1 — 16 February 2012 5 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

tp = 100 s;  = 10 %; Th = 25 C.

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

PL = 250 W; tp = 100 s;  = 10 %; Th = 25 C.

Fig 3. Output power as a function of input power;

typical valu e s Fig 4. Power gain, input return loss and drain

efficiency as function of frequency; typical

values

Pi (W)

02015510

aaa-002253

200

100

300

400

(W)

(1)

(2)

(3)

aaa-002254

f (MHz)

1150 145013501250

Gp, RLin

(dB)

ηD

(%)

ηD

RLin

tp = 1 ms;  = 10 %; Th = 25 C.

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

tp = 1 ms;  = 10 %; Th = 25 C.

(1) f = 120 0 MHz

(2) f = 130 0 MHz

(3) f = 140 0 MHz

Fig 5. Output power as a function of input power;

typical valu e s Fig 6. Power gain as a function of output power;

typical values

Pi (W)

02015510

aaa-002255

200

250

150

100

300

350

(W)

(1)

(2)

(3)

PL (W)

0 100 200 300 35025015050

aaa-002256

(dB)

(1)

(3)

(2)

Preliminary data sheet Rev. 1 — 16 February 2012 6 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

tp = 1 ms;  = 10 %; Th = 25 C.

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

PL = 250 W; tp = 1 ms;  = 10 %; Th = 25 C.

Fig 7. Drain efficiency as a function of output power;

typical valu e s Fig 8. Power gain, input return loss and drain

efficiency as function of frequency; typical

values

aaa-002257

ηD

(%)

PL (W)

0 100 200 300 35025015050

(1)

(2)

(3)

aaa-002258

f (MHz)

1150 145013501250

Gp,RLin

(dB)

ηD

(%)

ηD

RLin

f = 1300 MHz; tp = 1 ms;  = 10 %.

(1) Th = 25 C

(2) Th = 85 C

f = 1300 MHz; tp = 1 ms;  = 10 %.

(1) Th = 25 C

(2) Th = 85 C

Fig 9. Output power as a function of input power;

typical valu e s Fig 10. Power gain as a function of output power;

typical values

Pi (W)

02015510

aaa-002259

200

250

150

100

300

350

(W)

(1)

(2)

PL (W)

0 100 200 300 35025015050

aaa-002260

(dB)

(1)

(2)

Preliminary data sheet Rev. 1 — 16 February 2012 7 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

f = 1300 MHz; tp = 1 ms;  = 10 %.

(1) Th = 25 C

(2) Th = 85 C

f = 1300 MHz; tp = 100 s;  = 10 %.

(1) Th = 25 C

(2) Th = 85 C

Fig 1 1 . Drain efficiency as a fu nction o f output power;

typical valu e s Fig 12. Output power as a function of input power;

typical values

aaa-002261

ηD

(%)

PL (W)

0 100 200 300 35025015050

(1)

(2)

Pi (W)

02015510

aaa-002262

200

100

300

400

(W)

(1)

(2)

f = 1300 MHz; tp = 1 ms;  = 10 %.

(1) Th = 25 C

(2) Th = 85 C

f = 1300 MHz; tp = 100 s;  = 10 %.

(1) Th = 25 C

(2) Th = 85 C

Fig 13. Power gain as a function of output power;

typical valu e s Fig 14. Drain efficiency as a function of output power;

typical values

PL (W)

0 400300100 200

aaa-002263

(dB)

(2)

(1)

PL (W)

0 400300100 200

aaa-002264

ηD

(%)

(1)

(2)

Preliminary data sheet Rev. 1 — 16 February 2012 8 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

7.2 Impedance information

7.3 Circuit information

Table 8. Typical impedance

Typical values unless otherwise specified .

f ZSZL

GHz  

1.2 1.077  j2.78 1.288  j1.014

1.3 1.352  j2.949 1.139  j1.086

1.4 1.881  j2.640 1.038  j1.132

Fig 15. Definition of transis t or impedance

001aaf059

drain

gate

Printed-Circuit Board (PCB): Duroid 6010; r = 10.15; thickness = 0.64 mm;

thickness copper plating = 35 m.

See Table 9 for a list of components.

Fig 16. Component layout for application circuit

aaa-002265

C10

C8 C9

C11

Preliminary data sheet Rev. 1 — 16 February 2012 9 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

[1] American Technical Ceramics type 100A or capacitor of same quality.

[2] American Technical Ceramics type 100B or capacitor of same quality.

[3] American Technical Ceramics type 700A or capacitor of same quality.

Table 9. List of components

For test circuit see Figure 16.

Component Description Value Remarks

C1, C2, C3, C4, C7 multilayer ceramic chip capacitor 56 pF [1]

C5, C8 multilayer ceramic chip capacitor 200 pF [2]

C6, C9 multilayer ceramic chip capacitor 1 nF [3]

C10 multilayer ceramic chip capacitor 10 F; 20 V

C11 electrolytic capacitor 22 F; 63 V

R1 SMD resistor 10 0603

Preliminary data sheet Rev. 1 — 16 February 2012 10 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

8. Package outline

Fig 17. Package outline SOT502A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502A 99-12-28

03-01-10

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25 0.5127.94

1.14

0.89

34.16

33.91

5.33

4.32

3.38

3.12

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.01 0.021.100

0.045

0.035 1.345

1.335

0.210

0.170 0.133

0.123 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

w1AB

M M M

Preliminary data sheet Rev. 1 — 16 February 2012 11 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

DC Direct Current

ESD ElectroStatic Discharge

IR InfraRed

L-band Long wave band

LDMOS Laterally Diffused Metal-Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor T ransistor

RF Radio Frequency

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLL6G1214L-250 v.1 20120216 Preliminary data sheet - -

Preliminary data sheet Rev. 1 — 16 February 2012 12 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

12. Legal information

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[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

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Product [short] dat a sheet Production This document contains t he product specification.

Preliminary data sheet Rev. 1 — 16 February 2012 13 of 14

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

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13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLL6G1214L-250

LDMOS L-band radar power transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 February 2012

Document identifier: BLL6G1214L-250

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.2 Impedance information. . . . . . . . . . . . . . . . . . . 8

7.3 Circuit information. . . . . . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Handling information. . . . . . . . . . . . . . . . . . . . 11

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14