Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
BVCBO Collector-Base Breakdown Voltage IC = 10
A, IB = 0 60 V
BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0 m A, IE = 0 45 V
BVEBO Emitter-Base Breakdown Voltage IE = 10
A, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 50 V, IE = 0 50 nA
ICES Collector Cutoff Current VCE = 40 V, IE = 10 50 nA
IEBO Emitter Cuto ff Current VEB = 4.0 V, IC = 0 50 nA
fTCurrent Gain - Bandwidth Product VCE = 20 V, IC = 20 m A 250 MHz
Cobo Output Capacitance VCB = 10 V, f = 1.0 MHz 6.0 pF
NF Noise Figure IC = 100 µA, VCE = 5.0 V,
RG = 2.0 kΩ, f = 1.0 kHz 4.0 dB
dB
hFE DC Current Gain IC = 100 µA, VCE = 1.0 V 200
200A
IC = 10 mA , V CE = 1.0 V 200
200A
IC = 100 mA , V CE = 1.0 V * 200A
IC = 150 mA , V CE = 5.0 V * 200
200A
80
240
100
300
100
100
100
450
600
350
VCE(sat)Collector-Emitter Sat urat ion V oltage IC = 10 mA, IB = 1. 0 m A
IC = 200 mA , I B = 20 m A * 0.2
0.4 V
V
VBE(sat)Base-Emitter Saturati on V olt age IC = 10 mA , IB = 1. 0 m A
IC = 200 mA , I B = 20 m A * 0.85
1.0 V
V
Typical Characteristics
Typical Pul sed Current Gain
vs Collector Current
0.01 0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collec tor- E mit te r Sat ura tion
Vo ltag e vs Coll ector Cu r rent
0.1 1 10 100 300
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR C URRENT (m A)
V - CO LLECT O R EMITT ER VOLTAG E ( V)
C
CESAT
25 °C
- 4 0 °C
125 °C
β= 10
PNP General Purpose Amplifier
(continued)
PN200 / MMBT200 / PN200A / MMBT200A