CLA30MT1200NPZ
4
1
3
1~ Triac
Three Quadrants operation: QI - QIII
High Efficiency Thyristor
Part number
CLA30MT1200NPZ
Marking on Product: CLA30MT1200NPZ
Backside: anode/cathode
-
Negative Half Cycle
Positive Half Cycle
+
QII QI
QIII QIV
I
GT
-+ I
GT
Three
Q
u
a
dr
a
nt
O
p
e
r
a
tion
Note: All Polarities are referenced to T1
T2
T1
REF
(-) I
GT
T2
T1
REF
(-) I
GT
T2
T1
REF
(+) I
GT
TAV
T
V V1.35
RRM
15
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Triac for line frequency
● Three Quadrants Operation
- QI - QIII
● Planar passivated chip
● Long-term stability
of blocking currents and voltages
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-263 (D2Pak-HV)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● High creepage distance
between terminals
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30MT1200NPZ
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.35
R0.95 K/W
min.
15
VV
10T = 25°C
VJ
T = °C
VJ
mA1.5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
120
P
tot
130 WT = 25°C
C
15
1200
forward voltage drop
total power dissipation
Conditions
Unit
1.68
T = 25°C
VJ
125
V
T0
V0.89T = °C
VJ
150
r
T
30 mΩ
V1.35T = °C
VJ
I = A
T
V
15
1.79
I = A30
I = A30
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA33
P
GM
Wt = 30 µs 5
max. gate power dissipation
P
T = °C
C
150
Wt = 1
P
P
GAV
W0.2
average gate power dissipation
C
J
9
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
170
185
105
100
A
A
A
A
145
155
145
140
1200
300 µs
RMS forward current per phase
RMS
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
45 A
T
P
G
= 0.3
di /dt A/µs;
G
=0.3
DRM
cr
V = ⅔ V
DRM
GK
500
1.3 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
± 40 mA
T = °C-40
VJ
1.6 V
± 60 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
± 1 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
70 mA
I
L
25t µs
p
= 10
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
holding current
T = °C
VJ
50 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 15 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 15 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30MT1200NPZ
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
C
L
A
30
MT
1200
N
PZ
Part description
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
1~ Triac
Three Quadrants operation: QI - QIII
TO-263AB (D2Pak) (2HV)
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C150
virtual junction temperature
-40
Weight g1.5
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N60
mounting force with clip
20
mm
mm
4.2
4.7
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
35 A
per terminal
125-40
terminal to terminal
TO-263 (D2Pak-HV)
CLA30MT1200NPZ-TUB Tube 50 525255CLA30MT1200NPZ
Similar Part Package Voltage class
CLA30MT1200NPB TO-220AB (3) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on Product
Alternative
Ordering
CLA30MT1200NPZ-TRL 516960Tape & Reel 800CLA30MT1200NPZStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.89
mΩ
V
0 max
R
0 max
slope resistance *
27
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30MT1200NPZ
W
c2
A
A1
c
L
A2
2x b2
E1
2x b
H
D1
Supplier
Option
4
D2
E
2x e
L1
D
31
e1
min max min max
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
All dimensions conform with
and/or within JEDEC standard.
2.3 0.091
2,54 BSC 0,100 BSC
4.28 0.169
Dim.
Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
4
1
3
Outlines TO-263 (D2Pak-HV)
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30MT1200NPZ
0.01 0.1 1
60
80
100
120
1
4
0
0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
10
0
10
1
10
2
10
3
10
4
0.0
0.2
0.4
0.6
0.8
1.0
I
TSM
[A]
I
T
[
A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
10
100
1
0
00
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150 175
0
10
20
30
40
Fig. 1 Forward characteristics Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
0 10
0
5
10
15
20
25
30
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
I
G
[mA]
V
G
[
V]
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 125°C
T
VJ
= 150°C
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
0 15 30 45 60 75
0
1
2
3
4I
GD
: T
VJ
= 125°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 0°C
I
GD
: T
VJ
= -40°C
A
B
B
B
C
R
thi
[K/W] t
i
[s]
0.120 0.0100
0.100 0.0011
0.220 0.0250
0.245 0.3200
0.265 0.0900
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20190212cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved