© 2009 IXYS CORPORATION, All Rights Reserved DS100169A(8/09)
IXTH360N055T2
IXTT360N055T2
TrenchT2TM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C55 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ55 V
VGSM Transient ± 20 V
ID25 TC= 25°C (Chip Capability) 360 A
ILRMS Lead Current Limit, RMS 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 900 A
IATC= 25°C 180 A
EAS TC= 25°C 960 mJ
PDTC= 25°C 935 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 55 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS= 0V 10 μA
TJ = 150°C 300 μA
RDS(on) VGS = 10V, ID = 100A, Note 1 2.4 mΩ
VDSS = 55V
ID25 = 360A
RDS(on) ≤≤
≤≤
≤ 2.4mΩΩ
ΩΩ
Ω
Features
zInternational Standard Package
z175°C Operating Temperature
zHigh Current Handling Capability
zAvalanche Rated
z Fast Intrinsic Diode
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC/DC Converters and Off-line UPS
zPrimary- Side Switch
zHigh Current Switching Applications
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
TO-268 (IXTT)
GS
D (TAB)
TO-247 (IXTH)
G
DS
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH360N055T2
IXTT360N055T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 65 110 S
Ciss 20 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2650 pF
Crss 480 pF
RGi Gate Input Resistance 1.6 Ω
td(on) 30 ns
tr 23 ns
td(off) 62 ns
tf 56 ns
Qg(on) 330 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 76 nC
Qgd 87 nC
RthJC 0.16 °C/W
RthCH TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 360 A
ISM Repetitive, Pulse Width Limited by TJM 1440 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 78 ns
IRM 4.2 A
QRM 164 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
IF = 150A, VGS = 0V
-di/dt = 100A/μs
VR = 27V
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-268 Outline
© 2009 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Outp ut C h ar acter i sti c s
@ 25ºC
0
50
100
150
200
250
300
350
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
9V
7V
4V
5V
6V
8V
Fig. 3. Output Characteristics
@ 150ºC
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
9V
7
V
5
V
6
V
4
V
8
V
Fig. 4. R
DS(on)
No r mal i z ed to I
D
= 180A Valu e vs.
Junction Tem perature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 300A
I
D
= 180A
Fig. 5. R
DS(on)
No r mal iz ed to I
D
= 180A Valu e vs.
Drain Curren t
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 50 100 150 200 250 300 350
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
15V
- - - - -
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u rrent vs. C ase Temper atu re
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
ID - Amperes
External Lead Current Limit
Fi g . 2. Exten d ed Ou tp u t Ch ar acter i sti cs
@ 25ºC
0
50
100
150
200
250
300
350
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VDS - Volts
ID - Amperes
V
GS
= 10V
8V
7V
6V
4V
5V
IXTH360N055T2
IXTT360N055T2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH360N055T2
IXTT360N055T2
IXYS REF: T_360N055T2(V8)7-14-09
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
0.30.40.50.60.70.80.91.01.11.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 27.5V
I
D
= 180A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
DC
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
External Lead Current Limit
100ms
© 2009 IXYS CORPORATION, All Rights Reserved
Fi g. 14 . R esi sti v e Tu r n - o n
Ri se Ti me vs . D rai n C u r r en t
10
20
30
40
50
60
70
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 2 , V
GS
= 10V
V
DS
= 27.5V
Fig . 15. R esistive Tu rn -on
Switchin g Ti mes vs. Gate Resistan ce
0
50
100
150
200
250
300
350
400
450
500
23456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
120
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig. 16. Resi st i ve Turn- o f f
Swit ch i n g Times vs . Ju n cti o n Tempe r atu r e
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig . 17. R esistive Tu rn -o ff
Switch in g Ti mes vs. D r ai n C u r r e n t
35
40
45
50
55
60
65
70
75
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 27.5V
T
J
= 25ºC, 125ºC
Fig. 13. Resi st i ve Tu r n - o n
Ri se Time vs. Jun cti o n Temper a tu r e
0
10
20
30
40
50
60
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 27.5V
I
D
= 200A
I
D
= 100A
Fig. 18. Resi st i ve Turn- o f f
Switch in g Ti mes vs. Gate Re si stan c e
0
50
100
150
200
250
300
350
400
450
500
2 3 4 5 6 7 8 9 101112131415
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
350
400
450
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V I
D
= 100A, 200A
IXTH360N055T2
IXTT360N055T2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH360N055T2
IXTT360N055T2
IXYS REF: T_360N055T2(V8)7-14-09
Fi g . 19. Maxi mu m Tr an si en t Thermal I mp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 19. Maximu m Tr an si ent Ther mal I mp ed an ce
0.20
