LVP640
02
Symbol
Parameter
Limit
Min.
Typ. Max. Unit
STATIC
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250µA 200 V
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250µA 2.0 4.0 V
I
GSS
Gate-Body Leakage V
GS
=±25V ±100 nA
I
DSS
Zero Gate Voltage Drain Current V
DS
=Max Rating, V
GS
=0V 1 µA
R
DS(ON)
Drain-Source On-Resistance V
GS
=10V, I
D
=9A 0.15 0.18 Ω
G
FS(ON)
Forward Transconductance V
DS
=30V, I
D
=9A 11 S
DYNAMIC
Qg Total Gate Charge
37 48
Qgs Gate-Source Charge
6.3
Qgd Gate-Drain Charge
V
DS
=160V, V
GS
=10V,
I
D
=18A
18.3
nC
C
iss
Input Capacitance
870 1130
C
oss
Output Capacitance
165 215
C
rss
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V,
f=1MHz
60 80
pF
t
d(on)
Turn-On Delay Time
15 40
t
r Turn-On Rise Time
125 260
t
d(off)
Turn-Off Delay Time
100 210
t
f
Turn-Off Fall Time
V
DS
=100V, I
D
=18A,
R
G
=25Ω
50 110
ns
Symbol Characteristic Min.
Typ.
Max.
Units
Test Condition
I
S
Continuous Source current ------
18
I
SM
Pulsed Source Current 72
A Integral reverse PN diode in The
MOSFET
V
SD
Diode Forward voltage------------- 1.5 V I
S
=18A , V
GS
= 0V
trr Reverse Recovery Time 170 ns
Qrr Reverse Recovery Charge 0.99
nC
I
F
= 18A, V
GS
= 0V,
dI
F
/ dt = 100A/µs
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Source-Drain Diode Ratings and Characteristics
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%