UTC MCR100 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R301-004,B
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume,
line-powered consumer applications such as relay
and lamp drivers, small motor controls, gate drivers
for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO-92
package which is readily adaptable for use in
automatic insertion equipment.
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers
and Other Logic circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
*Immunity to dV/dt – 20V/µsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and
Uniformity
TO-92
1
1:CATHODE 2:GATE 3:ANODE
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX UNIT
Thermal Resistance, Junction to Case RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Lead Solder Temperature
(<1/16” from case, 10 secs max)
TL 260 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MAX UNIT
Peak Repetitive Off-State Voltage(note)
(TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)
MCR100-4
MCR100-6
MCR100-8
VDRM,VRRM
200
400
600
V
On-Sate RMS Current
(Tc=80°C) 180° Condition Angles
IT(RMS) 0.8 A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)
ITSM 10 A
UTC MCR100 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R301-004,B
PARAMETER SYMBOL MAX UNIT
Circuit Fusing Considerations
(t=8.3 ms)
I2t 0.415 A2s
Forward Peak Gate Power
(TA=25°C, Pulse Width ≤1.0µs)
PGM 0.1 W
Forward Average Gate Power
(TA=25°C, t=8.3ms)
PG(AV) 0.1 W
Peak Gate Current – Forward
(TA=25°C, Pulse Width≤1.0µs)
IGM 1 A
Peak Gate Voltage – Reverse
(TA=25°C, Pulse Width≤1.0µs)
VGRM 5 V
Operating Junction Temperature Range @ Rated VRRM and
VDRM
TJ -40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current Tc=25°C
Tc=125°C
VD=Rated VDRM and VRRM; RGK=1kΩ I
DRM, IRRM
10
100
µA
µA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
ITM=1A Peak @ TA=25°C VTM 1.7 V
Gate Trigger Current (Continuous
dc)(note2)
VAK=7Vdc, RL=100Ω, TC=25°C IGT 40 200 µA
Holding Current (note 3) Tc=25 °C
Tc=-40 °C
VAK=7Vdc, initiating current=20mA IH 0.5 5
10
mA
Latch Current Tc=25 °C
Tc=-40 °C
VAK=7V, Ig=200µA IL 0.6 10
15
mA
Gate Trigger Current
(continuous dc) (Note 2) Tc=25 °C
Tc=-40 °C
VAK=7Vdc, RL=100Ω V
GT
0.62
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
VD=Rated VDRM, Exponential
Waveform, RGK=1000Ω, TJ=110°C
dV/dt 20 35 V/µs
Critical Rate of Rise of On-State
Current
IPK=20A; Pw=10µsec;
diG/dt=1A/µsec, Igt=20mA
di/dt 50 A/µs
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
2. R
GK=1000Ω included in measurement.
3. Does not include RGK in measurement.
UTC MCR100 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R301-004,B
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL PARAMETER
VDRM Peak Repetitive Off Stat Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IH Holding Current
CLASSIFICATION OF IGT
RANK B C AA AB AC AD
RANGE 48~105µA 95~200µA 8~16µA 14~21µA 19~25µA 23~52µA
UTC MCR100 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R301-004,B
