PD - 96127A IRF7404QPbF HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.040 Top View Description These HEXFET(R) Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -7.7 -6.7 -5.4 -27 2.5 0.02 12 -5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 50 C/W 1 08/09/10 IRF7404QPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Min. -20 -0.70 6.8 Typ. Max. Units Conditions V V GS = 0V, ID = -250A -0.012 V/C Reference to 25C, ID = -1mA 0.040 V GS = -4.5V, ID = -3.2A 0.060 V GS = -2.7V, ID = -2.7A V V DS = VGS, ID = -250A S V DS = -15V, ID = -3.2A -1.0 V DS = -16V, VGS = 0V A -25 V DS = -16V, VGS = 0V, TJ = 125C -100 V GS = -12V nA 100 V GS = 12V 50 I D = -3.2A 5.5 nC V DS = -16V 21 V GS = -4.5V, See Fig. 6 and 12 14 V DD = -10V 32 I D = -3.2A ns 100 R G = 6.0 65 R D = 3.1, See Fig. 10 Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance 2.5 LS Internal Source Inductance 4.0 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1500 730 340 IGSS D nH Between lead tip and center of die contact pF V GS = 0V V DS = -15V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units -3.1 -27 69 71 -1.0 100 110 A V ns C Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -3.2A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -3.2A, di/dt -65A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. TJ 150C 2 www.irf.com IRF7404QPbF 1000 1000 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 10 -1.5V 1 20s PULSE WIDTH TJ = 25C A 0.1 0.01 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP TOP 0.1 1 10 100 10 -1.5V 1 20s PULSE WIDTH TJ = 150C 0.1 0.01 100 0.1 Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C 10 VDS = -15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 100 Fig 2. Typical Output Characteristics 100 1.5 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 1 5.0 A I D = -5.3A 1.5 1.0 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7404QPbF 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 3000 Ciss 2000 Coss 1000 Crss 0 1 10 100 I D = -3.2A VDS = -16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 A 0 10 20 30 40 50 60 A Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -I SD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) TJ = 150C 10 TJ = 25C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -V SD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.6 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7404QPbF 8.0 V DS D.U.T. V GS -ID , Drain Current (A) RD RG 6.0 A V + DD -4.5V Pulse Width 1s Duty Factor 0.1% 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7404QPbF Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -4.5 V QGS VGS VG -3mA Charge Fig 12a. Basic Gate Charge Waveform 6 D.U.T. QGD +VDS IG ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit www.irf.com IRF7404QPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V [ ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ Re-Applied Voltage Body Diode VDD ] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 7 IRF7404QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 6X e1 8X b 0.25 [.010] A A1 MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC e1 e MILLIMETERS MIN A E INCHES DIM B H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASS EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF7404QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 www.irf.com 9