Hitachi IGBT Module / Silicon N-Channel IGBT
MBM400GR6
[Rated 400A/600V, Dual-pack type]
FEATURES OUTLINE DRAWING
· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
· High reliability structure.
· Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
Item Symbol Unit Value
Collector-Emitter Voltage VCES V 600
Gate-Emitter Voltage VGES V ±20
DC IC 400
Collector Current 1ms ICP A 800
DC IF 400 *1
Forward Current 1ms IFM A 800
Collector Power Dissipation PC W 1170
Junction Temperature Tj °C -40 ~ +150
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage Viso VRM
S
2500(AC 1 minute)
Terminals 2.94
(
30
)
*2
Screw Torque Mounting
-
N·m
(k
g
f·cm) 2.94
(
30
)
*3
Notes; *1: RMS current of Diode £ 120 Arms
*2, *3 : Recommended value 2.45 m (25 kgf·cm)
CHARACTERISTICS (TC=25°C)
Item Symbol Unit Min. Typ. Max. Test Conditions
Collector-Emitter Cut-Off Current ICES mA
- -
1.0 VCE=600V, VGE=0V
Gate-Emitter Leakage Current IGES nA
- -
±500 VGE=±20V, VCE=0V
Collector-Emitter Saturation Voltage V
C
E
(sat)
V
-
2.1 2.6 IC=400A, VGE=15V
Gate-Emitter Threshold Voltage V
G
E
(
T
O)
V
- -
10 V
CE=5V, IC=400mA
Input Capacitance Cies pF
-
20000
-
V
CE=10V, VGE=0V, f=1MHz
Rise Time t
r
-
0.25 0.5
Turn-ON Time t
on
-
0.35 0.7
Fall Time tf
-
0.2 0.32
Switching Times
Turn-Off Time t
off
ms
-
0.8 1.1
VCC=300V
RL=0.75W
RG=6.2W *4
VGE=±15V
Peak Forward Voltage Drop VFM V
-
1.6 2.2 IF=400A, VGE=0V
Reverse Recovery Time trr ms
- -
0.3 I
F=400A, VGE=-10V,di/dt=400A/ms
IGBT R
th(j-c) 0.106
Thermal Impedance FWD Rth(j-c) °C/W
- -
0.22 Junction to case
Notes; *4:RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable R
G value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
6.5
29
7
12
36
φ0.8
46
108
93
20 18 20
25 25
4-φ6.5
3-M6
48
62
4-Fast-on
Terminal
#110
15
27
E2 C1
C2E1
G2
E2
E1
G1
Unit in mm
Spec. No. IGBT-SP-99016(R1)
C
2E1 E2
C
1
G
2
E2
E1
G
1
Weight : 470g
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PDE-M400GR6-0
VGE
=
15V14V13V
400
600
800
0 2 4 6 8 10
200
0
11V
12V
TYPICAL
10V
9V
Tc
=
25
°
C
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Pc
=
1170W
VGE
=
15V14V13V
800
0 2 4 6 8 10
400
600
200
0
11V
12V
TYPICAL
10V
9V
Tc
=
125
°
C
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=
400A
Ic
=
800A
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=
25
°
C
Ic
=
800A
Ic
=
400A
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=
125
°
C
20
15
10
5
00 500 1000 1500
TYPICAL
Vcc
=
300V
Ic
=
400A
Tc
=
25
°
C
Gate to Emitter Voltage, V
GE
(V)
Gate Charge, QG (nC)
Gate charge characteristics
800
600
400
200
00 1 2 3 4 5
TYPICAL
Forward Current, I
F
(A)
Forward V oltage, VF (V)
Forward voltage of free-wheeling diode
VGE
=
0
Tc 25
°
C
Tc
===
125
°
C
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PDE-M400GR6-0
1.5
1
0.5
00 100 200 300 400 500
TYPICAL
Switching Time, t (µs)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc=300V
VGE15V
RG=6.2
TC=25°C
Resistive Load
tr
tf
TYPICAL
10
1
0.1 1 10 100
Switching Time, t (µs)
Gate Resistance, RG ()
Switching time vs. Gate resistance
ton
toff
VCC=300V
VGE15V
IC =400A
TC=25°C
Resistive Load
tf
tr
TYPICAL
40
30
20
10
00 100 200 300 400 500
Switching Loss, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
Err
Eton
Etoff
VCC=300V
VGE15V
RG=6.2
TC=125°C
Inductive Load
TYPICAL
100
10
1
0.1 1 10 100
Switching Loss, Et
on
, Et
off
, E
rr
(mJ/pulse)
Gate Resistance. RG ()
Switching loss vs. Gate resistance
VCC=300V
VGE15V
IC =400A
TC=125°C
Inductive Load Etoff
Err
Eton
10000
1000
100
10
10 200 400 600
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
VGE15V
RG=6.2
TC125°C
1
0.1
0.01
0.001
0.001 0.01 0.1 1 10
Transient Thermal Impedance, R
th(j-c)
(°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
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1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traf fic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
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any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
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secondary damage resulting from use at a value exceeding the absolute maximum rating.
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