RS2A thru RS2M
FEATURES
Fast switching for high efficiency
For surface m ounted applications
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flamm ability classification
94V-0
ME CHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 gram
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
Maximum Av erage Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum R ecurrent Peak Reverse Voltag e
Maximum R MS Volta ge
Maximum DC Blocking Voltage
Maximum forward Volt age at 1.5A D C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C
1.5
50
1.3
5.0
200
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 3)
R
0JL
20
C/W
C
J
Typical Jun ction Ca pacitance (Note 2)
30
pF
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
@T
L
=90 C
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
RS2A RS2M RS2K RS2J RS2G RS2D RS2B
SMB
All Dimensions in millimeter
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
3.9 4 3.30
1.96 2.2 1
0.3 1 0.15
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
C
B
A
HEF
GD
Maximum Reverse Recovery Time (Note 1)
T
RR
150 250 500
ns
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Lead.
SURFA CE MOUNT
FA ST RECOVERY RECTIFIERS
REVE RSE VOLTAGE -
50
to
1000
Volts
FOR WAR D CURRENT -
1. 5
Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CH ARACTERISTICS
Ratings at 25
℃
am bient temperature unless otherw ise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, derate c u rrent b y 20%
REV. 2, 01-Dec-2000, KSEB02