Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1Publication Order Number:
MMBTA63LT1/D
MMBTA63LT1G,
MMBTA64LT1G,
SMMBTA64LT1G
Darlington Transistors
PNP Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCES −30 Vdc
Collector−Base Voltage VCBO −30 Vdc
Emitter−Base Voltage VEBO −10 Vdc
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25C
Derate above 25C
PD
300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA63LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
COLLECTOR 3
BASE
1
EMITTER 2
MMBTA64LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2x M G
G
2x = Device Code
x = U for MMBTA63LT1G
x = V for MMBTA64LT1G
SMMBTA64LT1G
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBTA64LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc)
V(BR)CEO
−30 −
Vdc
Collector Cutoff Current
(VCB = −30 Vdc)
ICBO
− −100
nAdc
Emitter Cutoff Current
(VEB = −10 Vdc)
IEBO
− −100
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mAdc, VCE = −5.0 Vdc)
MMBTA63
(IC = −10 mAdc, VCE = −5.0 Vdc)
MMBTA64, SMMBTA64
(IC = −100 mAdc, VCE = −5.0 Vdc)
MMBTA63
(IC = −100 mAdc, VCE = −5.0 Vdc)
MMBTA64, SMMBTA64
hFE
5,000
10,000
10,000
20,000
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −0.1 mAdc)
VCE(sat)
− −1.5
Vdc
Base − Emitter On Voltage
(IC = −100 mAdc, VCE = −5.0 Vdc)
VBE(on)
− −2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
fT125 −
MHz
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
http://onsemi.com
3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
200
-1.0
2.0
hFE, DC CURRENT GAIN (X1.0 K)
TA = 125C
25C
-55C
VCE = -2.0 V
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -100 -300
100
70
50
30
20
10
7.0
5.0
3.0
-0.3 -0.5 -0.7 -70 -200
-5.0 V
-10 V
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
-2.0
-0.6
TA = 25C
IC =
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.1-0.2 -1 -2 -5 -10 -20 -50 -100-200-500-0.5 -1K-2K -10K
-10 mA -50 mA -100 mA -175 mA -300 mA
-5K
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
V, VOLTAGE (VOLTS)
-2.0
0
-0.3
TA = 25C
VBE(on) @ VCE = -5.0 V
-1.6
-1.2
-0.8
-0.4
VCE(sat) @ IC/IB = 1000
IC/IB = 100
-0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200 -300
10
4.0
3.0
2.0
0.1
Figure 4. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
VCE = -5.0 V
f = 100 MHz
TA = 25C
|hFE|, HIGH FREQUENCY CURRENT GAIN
1.0
0.4
0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K
VBE(sat) @ IC/IB = 100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
0.001
1
0.1
0.01
1.0 1000.01 10
10 ms
Single Pulse Test
@ TA = 25C
Thermal Limit
100 ms
IC, COLLECTOR CURRENT (A)
1 ms
1 s
0.1
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBTA63LT1/D
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