© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16
SiC Schottky Diode
LFUSCD10120A, 1200 V, 10 A, TO-220 2-lead
RoHS
Pb
LFUSCD10120A
Features
Applications
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Enhanced surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
• Boost diodes in power
factor correction
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
Maximum Ratings
Characteristics Symbol Conditions Value Unit
DC Blocking Voltage VR- 1200 V
Repetitive Peak Reverse Voltage, Tj
= 25 °C VRRM 1200 V
Maximum DC Forward Current IFTC = 142 °C 10 A
Non-Repetitive Forward Surge
Current IFSM TC = 25 °C, 8.3 ms, half sine pulse 80 A
Power Dissipation PTot
TC = 25 °C 136 W
TC = 142 °C 30
Maximum Operating Junction
Temperature TJ,MAX 175 °C
Storage Temperature TSTG -55 to 175 °C
Soldering Temperatures,
Wavesoldering Only Allowed at
Leads
Tsold 1.6 mm from case for 10s 260 °C
Circuit Diagram
Description
The LFUSCD series of silicon carbide (SiC) Schottky di-
odes has near-zero recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
The diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.