© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16
SiC Schottky Diode
LFUSCD10120A, 1200 V, 10 A, TO-220 2-lead
RoHS
Pb
LFUSCD10120A
Features
Applications
Positive temperature
coefficient for safe
operation and ease of
paralleling
175 °C maximum
operating junction
temperature
Enhanced surge capability
Extremely fast,
temperature-independent
switching behavior
Dramatically reduced
switching losses
compared to Si bipolar
diodes
Boost diodes in power
factor correction
Switch-mode power
supplies
Uninterruptible power
supplies
Solar inverters
Industrial motor drives
Maximum Ratings
Characteristics Symbol Conditions Value Unit
DC Blocking Voltage VR- 1200 V
Repetitive Peak Reverse Voltage, Tj
= 25 °C VRRM 1200 V
Maximum DC Forward Current IFTC = 142 °C 10 A
Non-Repetitive Forward Surge
Current IFSM TC = 25 °C, 8.3 ms, half sine pulse 80 A
Power Dissipation PTot
TC = 25 °C 136 W
TC = 142 °C 30
Maximum Operating Junction
Temperature TJ,MAX 175 °C
Storage Temperature TSTG -55 to 175 °C
Soldering Temperatures,
Wavesoldering Only Allowed at
Leads
Tsold 1.6 mm from case for 10s 260 °C
Circuit Diagram
Description
The LFUSCD series of silicon carbide (SiC) Schottky di-
odes has near-zero recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
The diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management
are desired.
Case
12
21
1
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16
SiC Schottky Diode
LFUSCD10120A, 1200 V, 10 A, TO-220 2-lead
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
500600 700800 900100011001200
Reverse Current, IR(A)
Reverse Voltage, VR(V)
- 55 °C
25 °C
175 °C
10-4
10-5
10-6
10-7
10-8
10-9
Figure 2: Typical Foward CharacteristicsFigure 1: Typical Reverse Characteristics
0
5
10
15
20
012345
Forward Current, I
F
(A)
Forward Voltage, V
F
(V)
- 55 °C
25 °C
100 °C
150 °C
175 °C
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Forward Voltage VF
IF = 10 A, TJ = 25 °C -1. 5 1. 7 V
IF = 10 A, TJ = 175 °C - 2.5 3
Reverse Current IR
VR = 1200 V , TJ = 25 °C - 30 250 μA
VR = 1200 V , TJ = 175 °C - 60 800
Total Capacitive Charge QCVR = 600 V, IF = 10 A, di/dt = 250 A/µs - 35 - nC
Total Capacitance C
VR = 1 V, f =1 MHz - 500 -
pF
VR = 300 V, f = 1 MHz - 50 -
VR = 600 V, f = 1 MHz - 36 -
Electrical Characteristics
Footnote: TJ = +25 °C unless otherwise specified
Thermal Characteristics
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Thermal Resistance RθJC -- - 1. 1 °C/W
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16
SiC Schottky Diode
LFUSCD10120A, 1200 V, 10 A, TO-220 2-lead
Figure 5: Capacitance vs. Reverse Voltage
0
100
200
300
400
500
600
700
0.11 10 1001000
Capacitance, C (pF)
Reverse Voltage, V
R
(V)
Figure 6: Transient Thermal Impedance
0.01
0.1
1
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Thermal Impedance, Z(±C/W)
Time , t (s)
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
Single Pulse
θJC
0
50
100
150
25 50 75 100125 150175
Power Disspiation, PTot(W)
TC(±C)
Figure 4: Diode Foward CurrentFigure 3: Power Disipation
0
20
40
60
80
100
120
25 50 75 100125 150175
Forward Current,I
F
(A)
T
C
(±C)
D = 0.1
D = 0.3
D = 0.5
D = 0.7
D = 1.0
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16
SiC Schottky Diode
LFUSCD10120A, 1200 V, 10 A, TO-220 2-lead
Dimensions-Package TO-220 2-lead
Packing Specification ( Tube for TO-220 2-lead )
Symbol Inches Millimeters
Min Max Min Max
A 0.165 0.185 4.19 4.70
A1 0.048 0.052 1.22 1.32
A2 0.094 0.098 2.39 2.49
b 0.025 0.035 0.64 0.89
b2 0.045 0.055 1. 1 4 1.40
C 0.018 0.025 0.46 0.64
D 0.595 0.615 15.11 15.62
D1 0.355 0.365 9.02 9.27
E 0.381 0.391 9.68 9.93
e1 0.198 0.202 5.03 5.13
L 0.500 0.510 12.70 12.95
L1 0.120 0.150 3.05 3.81
øP0.143 0.147 3.63 3.73
Q0.100 0.120 2.54 3.05
Part Marking System Packing Options
Part Number Marking Packing Mode M.O.Q
LFUSCD10120A LFUSCD10120A 50 pcs / Tube 500
Mounting M3/M3.5 1Nm
Torque Screw 8.8 lbf-in
Note: All units in Millimeters. Tolerances ± 0.25mm unless otherwise specified.
LFUSCD
10120A
PYWXX ZZZ
SCD = SiC diode
10 = Current Rating (10 A)
120 = Voltage Rating (1200 V)
A = TO-220-2 package
LFU = Littelfuse
PYWXX = Date Code
ZZZ = Lot Number
Date code notes:
P = assembly code
Y = year
W = week
XX = sequencial build number