IN1IN2
D1D2
S1S2
V– V+
GND NC
S4S3
D4D3
IN4IN3
Dual-In-Line
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
S1
NC
S2
IN3
V–
D3
V+
D4
NC
IN4
NC
NC
GND
IN2
NC
D2
S4
D1
S3
IN1
Key
Top View
LCC
910111213
4
5
6
7
8
1231920
14
15
16
17
18
DG201A_MIL DG201A_MIL
DG201A_MIL/202_MIL
Vishay Siliconix
Document Number: 70036
S-00405—Rev. G, 21-Feb-00 www.vishay.com FaxBack 408-970-5600
4-1
Monolithic Quad SPST CMOS Analog Switches
(Obsolete for non-hermetic. Use DG201B/202B as pin-for-pin replacements.)
15-V Input Range
Low Off Leakage—ID(on): 0.1 nA
Low On-Resistance—rDS(on): 115
44-V Maximum Supply Ratings
TTL and CMOS Compatible
Wide Input Range
Low Distortion Switching
Can Be Driven from Comparators or
Op Amps Without Limiting Resistors
Disk Drives
Radar Systems
Communications Systems
Sample-and-Hold
The DG201A_MIL and DG202_MIL are quad SPST analog
switches designed to provide accurate switching over a wide
range of input signals. When combining a low on-resistance
and a wide signal range (15 V) with low charge-transfer
these devices are well suited for industrial and military
applications.
Built on Vishay Siliconix’ high voltage metal gate process to
achieve optimum switch performance, each switch conducts
equally well in both directions when on. When off these
switches will block up to 30 V peak-to-peak and have a 44-V
absolute maximum power supply rating.
These two devices are differentiated by the type of switch
actions (See Truth Table).
The DG201A_MIL/202_MIL are available in hermetic
packages. For plastic packages, use the DG201B/202B as
pin-for-pin replacements.
Logic DG201A_MIL DG202_MIL
0 ON OFF
1 OFF ON
Logic “0” 0.8 V
Logic “1” 2.4 V
DG201A_MIL/202_MIL
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-2 Document Number: 70036
S-00405—Rev. G, 21-Feb-00
ORDERING INFORMATION
Temp Range Package Part Number
55 125 C
16 Pi C DIP
DG201AAK
55 125 C
16 Pi C DIP
DG201AAK/883, JM38510/12302BEA
–55 to 125_C16-Pin CerDIP 7705301EA
DG202AK
DG202AK/883
55 125 C
16
-
Pin Sidebraze
JM38510/12302BEC
–55 to 125_C
16
-
Pin
Sidebraze
7705301EC
LCC-20 77053012A
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD(V–) –2 V to (V+) +2 V . . . . . . . . . . . . . . . . . . . . . . . . . .
or 20 mA, whichever occurs first
Current, Any Terminal Except S or D 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current, S or D 20 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) 70 mA. . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature (K, Z Suffix) –65 to 150_C. . . . . . . . . . . . . . . . .
(J, Y Suffix) –65 to 125_C. . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin CerDIP and Sidebrazec900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LCC-20d750 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 12 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
V+
INX
V–
GND
–
+
S
D
V–
V+
DG201A_MIL/202_MIL
Vishay Siliconix
Document Number: 70036
S-00405—Rev. G, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600
4-3
Test Conditions
Unless Specified A Suffix
–55 to 125_C
Parameter Symbol V+ = 15 V, V– = –15V
VIN = 2.4 V, 0.8 VfTempbMindTypcMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –15 15 V
Drain
-
Source On
-
Resistance
rDS(on)
VD
=
10 V, IS
=
1 mA
Room 115 175
W
Drain
-
Source
On
-
Resistance
r
DS(on)
V
D =
10
V
,
I
S =
1
mA
Full 250
W
Source Off
Leakage Current IS(off) VS = 14 V, VD = 14 V Room
Full –1
–100 0.02 1
100
A
Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room
Full –1
–100 0.02 1
100 nA
Drain On Leakage Current ID(on) VS = VD = 14 V Room
Full –1
–200 0.15 1
200
Digital Control
Input Current with
ItVlt Hih
IINH
VIN = 2.4 V Room
Full –1
–1 –0.0004
A
p
Input V oltage High
I
INH VIN = 15 V Room
Full 0.003 1
10 mA
Input Current with
Input V oltage Low IINL VIN = 0 V Room
Full –1
–10 –0.0004
Dynamic Characteristics
Turn-On Time tON See Switching T ime
T t Ci it
Room 480 600
ns
T urn-Off Time tOFF
g
Test Circuit Room 370 450
ns
Charge Injection Q CL = 1000 pF, Vg= 0 V
Rg = 0 WRoom 20 pC
Source-Of f Capacitance CS(off)
VS
=
0 V, VIN
=
5 V, f
=
1 MHz
Room 5
F
Drain-Of f Capacitance CD(off)
V
S =
0
V
,
V
IN =
5
V
,
f
=
1
MHz
Room 5 pF
Channel On Capacitance CD(on) +
CS(on) VD = VS = 0 V, VIN = 0 V
f = 1 MHz Room 16
pF
Off Isolation OIRR
VIN
=
5 V, RL
=
75 W
Room 70
dB
Channel-to-Channel
Crosstalk XTALK
V
IN =
5
V
,
R
L =
75
W
VS = 2 V, f = 100 kHz Room 90 dB
Power Supply
Positive Supply Current I+
All Channels On or Off
Room 0.9 2
mA
Negative Supply Current I–
All
Channels
On
or
Off
Room –1 –0.3
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG201A_MIL/202_MIL
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-4 Document Number: 70036
S-00405—Rev. G, 21-Feb-00
_
rDS(on) vs. VD and Power Supply VoltageCharge Injection vs. Analog Voltage
–15
70
60
50
40
30
20
10
0
–10
–20
–30 –10 –5 0 5 10 15
VANALOG – Analog V oltage (V)
Q (pC)
QD
QS
rDS(on) ()
V
D
– Drain Voltage (V)
–25 –15 –5 5 15 25
300
250
200
150
100
50
TA = 25_C
5 V
8 V
10 V
12 V
15 V
V+ = 15 V, V– = –15 V
TA = 25_C
Leakage vs. TemperaturerDS(on) vs. VD and Temperature
rDS(on) ()
V
D
– Drain Voltage (V) Temperature (_C)
–15 –10 –5 0 5 10 15
100 nA
–55 –35 –15 5 25 45 65 85 105 125
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA
V+ = 15 V, V– = –15 V
VD = 14 V
IS(off), ID(off), ID(on)
180
160
140
120
100
80
60
V+ = 15 V, V– = –15 V
125_C
85_C
25_C
0_C
–40_C
–55_C
I, I
SD
Insertion Loss vs. FrequencySupply Current vs. Switching Frequency
I+, I– (mA)
LOSS (dB)
f – Frequency (Hz) f – Frequency (Hz)
6
4
2
0
–2
–4
–61 k 10 k 100 k 1 M
I
I
+
–
V+ = 15 V
V– = –15 V
1 k 10 k 100 k 1 M 10 M
V+ = 15 V
V– = –15 V
Ref. 0.0 dBm
See Figures 3 and 4
RL = 50
1 M
1 k
2.0
0.0
–2.0
–4.0
–6.0
DG201A_MIL/202_MIL
Vishay Siliconix
Document Number: 70036
S-00405—Rev. G, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600
4-5
_
Leakage Current vs. Analog VoltageCrosstalk and Off Isolation vs. Frequency
(pA)I , I
SD
, ISO (dB)X TALK
f – Frequency (Hz) VD or VS – Drain or Source Voltage (V)
10
–20 –15 –10 –5 0 5 10 15 20
8
6
4
2
0
–2
–4
–6
–8
–10
V+ = 15 V
V– = –15 V
TA = 25_C
For ID(off), VS = –VD
For IS(off), VD = – VS
10 k 100 k 1 M 10 M
0
–20
–40
–60
–80
–100
–120
–140
–160
V+ = 15 V
V– = –15 V
Ref. 0 dBm
RL = 50
Off Isolation
Crosstalk
IS(off), ID(off)
ID(on)
(ns)tON
,t
OFF
(ns)tON
,t
OFF
1000
900
800
700
600
500
400
300
200
100
Switching Time vs. Power Supply VoltageSwitching Time vs. Temperature
Temperature (_C) V+ – Positive Supply (V)
–55 –35 –15 5 25 45 65 85 105 125
1000
10 12 14 16 18 20 22
900
800
700
600
500
400
300
200
100
V+ = 15 V
V– = –15 V
VS = 2 V
tON
tOFF
tON
tOFF
See Figures 3 and 4
DG201A_MIL/202_MIL
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-6 Document Number: 70036
S-00405—Rev. G, 21-Feb-00
FIGURE 2. Switching T ime
FIGURE 3. Off Isolation
50%
0 V
3 V
tOFF
tON
VO
tr <20 ns
tf <20 ns
Logic
Input
Switch
Output
90%
CL
35 pF
RL
1 kW
VO = VSRL + rDS(on)
RL
VS = +2 V VO
V–
V+
IN
SD
3 V
–15 V
GND
+15 V
S
IN RL
D
Rg = 50 W
VSVO
0V, 2.4 V
Off Isolation = 20 log VS
VO
V+
–15 V
GND V– C
C
+15 V
IN1
0V, 2.4 V
VO
+15 V
–15 V
GND
RL
V+
V–
NC
XTALK Isolation = 20 log
C
VS
C
VO
0V, 2.4 V
50 W
VSS1
IN2
S2
Rg = 50 W
D1
D2
C = RF bypass
FIGURE 4. Channel-to-Channel Crosstalk
FIGURE 5. Charge Injection
CL
1000 pF
Vg3 V
D
V+
V–
Rg
–15 V
GND
IN
SVO
+15 V
VO
DVO
INXON ONOFF
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.
DG201A_MIL/202_MIL
Vishay Siliconix
Document Number: 70036
S-00405—Rev. G, 21-Feb-00 www.vishay.com FaxBack 408-970-5600
4-7
V+
Positive Supply
Voltage
(V)
V–
Negative Supply
Voltage
(V)
VIN
Logic Input Voltage
VINH(min)/VINL(max)
(V)
VS or VD
Analog Voltage
Range
(V)
15
10
12
8b
–15
–12
–10
–8
2.4/0.8
2.4/0.8
2.2/0.6
2.0/0.5
–15 to 15
–12 to 12
–10 to 10
–8 to 8
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
b. Operation below 8 V is not recommended.
FIGURE 6. Sample-and-Hold
LM101A
+15 V
–15 V
30 pF
+15 V
–15 V
V+
V– DG201A_MIL
50 pF
1000 pF
J202
J500
J507
+15 V
2N4400
–15 V
VIN VOUT
1 kW
200 W
5 MW
5.1 MW
Aquisition T ime = 25 ms
Aperature T ime = 1 ms
Sample to Hold Offset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
–
+
DG201A_MIL/202_MIL
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-8 Document Number: 70036
S-00405—Rev. G, 21-Feb-00
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains
fC1 fC2 fC3
TTL
Control
150 pF
1500 pF
+15 V
DG201A_MILGND
30 pF
LM101A
+15 V
–15 V
1 10 100 1 k 10 k 100 k 1 M
–40
0
160
120
80
Voltage Gain – dB
fC4
Select
fC3
Select
fC2
Select
fC1
Select
R1 = 10 kW
R2 = 10 kW
R3 = 1 MW
VOUT
V1
V–
C4
C3
C2
C1
fL1
fC4
fL2 fL3 fL4
AL (V oltage Gain Below Break Frequency) = = 100 (40 dB)
R3
R1
fC (Break Frequency) = 1
2pR3CX1
2pR1CX
fL (Unity Gain Frequency) =
Max Attenuation = rDS(on)
10 kW
–47 dB
0.015 mF
0.15 mF
–15 V
–
+
40
f – Frequency (Hz)
Gain = Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
–15 V
+15 V
–15 V
GND
DG419
30 pF
+15 V
+15 V
–15 V DG202_MIL
Logic High = Switch On
+
–
LM101A
RF + RG
RG
VIN1
VIN2
CH
RF1
18 kWRF1
9.9 kWRF1
100 kW
RG3
100 W
RG2
100 W
RG1
2 kW
V+
V–
GNDV–
+5 V
VL
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
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