BFS20WT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet 1999 Apr 21

DISCRETE SEMICONDUCTORS

BFS20W

NPN medium frequency transistor

ook, halfpage

M3D102

1999 Apr 21 2

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20W

FEATURES

•Low current (ma x. 25 mA)

•Low voltage (max. 20 V).

•Very low feedba ck capacitance (typ. 350 fF).

APPLICATIONS

•IF and VHF applications in thick and thin-film circuits.

DESCRIPTION

NPN medium frequency transistor in a SOT323 (SC-70)

plastic pack ag e.

MARKING

Note

1. ∗ = -: Made in Hong Kong.

∗ = t: Made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

BFS20W N1∗

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT323; SC-70) and

symbol.

handbook, halfpage

MAM062

Top view

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating System (IEC 134).

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −30 V

VCEO collector-emitter voltage open base −20 V

VEBO emitter-base voltage open collector −4 V

ICcollector current (DC) −25 mA

ICM peak collector current −25 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 21 3

NXP Semiconductors Pr oduct data sheet

NPN medium frequency transistor BFS20W

THERMAL CHARACTE RISTICS

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 20 V −−100 nA

IE = 0; VCB = 20 V; Tj = 100 °C−−10 µA

IEBO emitter cut-off current IC = 0; VEB = 4 V −−100 nA

hFE DC current gain IC = 7 mA; VCE = 10 V 40 85 −

VBE base-emitter vo ltage IC = 7 mA; VCE = 10 V −740 900 mV

Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −1−pF

Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz −350 −fF

fTtransition frequen c y IC = 5 mA; VCE = 10 V; f = 100 MHz 360 470 −MHz

1999 Apr 21 4

NXP Semiconductors Pr oduct data sheet

NPN medium frequency transistor BFS20W

Fig.2 DC current gain as a function of collector

current; typical values.

VCE = 10 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

han

dbook, halfpage

103

102

MGR830

10−111010

IC (mA)

hFE

(2)

(3)

(1)

Fig.3 Collector-emitter saturation voltage as a

function of collector curr ent; typical values.

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGR831

−1

110

IC (mA)

VCEsat

(mV)

(1)

10 10

(2)

(3)

Fig.4 Base-emitter voltage as a function of

collector current; typical values.

VCE = 10 V.

(1) Tamb = −100 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

1000

200

MGR832

400

600

800

VBE

(mV)

−1

11010

IC (mA)

(2)

(3)

(1)

Fig.5 Collector current as a function of

collector-emitter voltage; typical values.

Tamb = 25 °C.

(1) IB = 280 µA.

(2) IB = 230 µA.

(3) IB = 180 µA.

(4) IB = 130 µA.

(5) IB = 80 µA.

(6) IB = 30 µA.

andbook, halfpage

010

VCE (V)

(mA)

(5)

(6)

(1)

MGR833

2468

(2)

(3)

(4)

1999 Apr 21 5

NXP Semiconductors Pr oduct data sheet

NPN medium frequency transistor BFS20W

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

1999 Apr 21 6

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20W

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Inter net at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa t ion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betwee n information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon du ctors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 115002/00/01/pp7 Date of releas e: 1999 Apr 21 Document orde r number: 9397 750 05696