MJD122 NPN Silicon Darlington Transistor Features * * * * * * Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122 Complement to MJD127 C B D-PAK 1 1.Base 2.Collector 3.Emitter R1 R2 R1 8k R2 0.12k Absolute Maximum Ratings E TA=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) IB Base Current PC TJ TSTG Storage Temperature 16 A 120 mA Collector Dissipation (TC=25C) 20 W Collector Dissipation (TA=25C) 1.75 W Junction Temperature 150 C - 65 to 150 C Electrical Characteristics Symbol VCEO(sus) TA=25C unless otherwise noted Parameter Test Condition Min. Max. *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 ICEO Collector Cut-off Current VCE = 50V, IB =0 10 A ICBO Collector Cut-off Current VCB = 100V, IE = 0 10 A IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE *DC Current Gain VCE = 4V, IC = 4A VCE = 4V, VEB = 8A VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 16mA IC = 8A, IB = 80mA 2 4 V V VBE(sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 80mA 4.5 V VBE(on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 2.8 V Output Capacitance VCB = 10V, IE = 0 f= 0.1MHz 200 pF Cob 100 Units 1000 100 V 12K * Pulse Test: PW300s, Duty Cycle2% (c) 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 www.fairchildsemi.com 1 MJD122 -- NPN Silicon Darlington Transistor December 2009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = 4V 1k 100 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 Figure 1. DC current Gain 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD[s], TURN ON TIME Cob[pF], CAPACITANCE 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 100 10 1 0.1 1 1 10 VCC= 30V IC=250IB IB1=IB2 1 tR tD, VBE(off)=0 0.1 0.01 0.1 100 1 10 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Turn On Time 100 10 IC[A], COLLECTOR CURRENT tSTG,tF[s], TURN OFF TIME VCC=30V IC=250IB tSTG 1 tF 1m 5m s DC s 1 0.1 0.01 0.1 0.1 1 1 10 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time Figure 6. Safe Operating Area (c) 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 10 0 s 50 0 s 10 www.fairchildsemi.com 2 MJD122 -- NPN Silicon Darlington Transistor Typical Performance Characteristics MJD122 -- NPN Silicon Darlington Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 1. Power Derating (c) 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 www.fairchildsemi.com 3 MJD122 -- NPN Silicon Darlington Transistor Mechanical Dimensions D-PAK 2.30 0.10 MIN0.55 0.91 0.10 9.50 0.30 0.50 0.10 0.76 0.10 0.50 0.10 1.02 0.20 2.30TYP [2.300.20] (2XR0.25) (1.00) (0.90) (3.05) 2.70 0.20 6.10 0.20 9.50 0.30 6.60 0.20 (5.34) (5.04) (1.50) (0.70) 2.30 0.20 (0.10) 2.30TYP [2.300.20] (0.50) 0.89 0.10 MAX0.96 (4.34) 2.70 0.20 0.80 0.20 0.60 0.20 (0.50) 6.10 0.20 5.34 0.30 0.70 0.20 6.60 0.20 0.76 0.10 Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation MJD122 Rev. 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