BC177/BC177B Series
Low Power Bipolar Transistors
Page 1 21/04/06 V1.0
Feature:
••PNP Silicon Planar Epitaxial Transistors.
TO-18 Metal Can Package
Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
BC177/BC177B Series
Low Power Bipolar Transistors
Page 2 21/04/06 V1.0
Absolute Maximum Ratings
Description Symbol BC177 Unit
Collector-Emitter Voltage
VCEO 45
V
VCES
50
Collector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current Continuous IC0.2 A
Power Dissipation at Ta= 25°C
Derate above 25°C PD
0.6
2.28 W
mW/°C
Power Dissipation at TC = 25°C
Derate above 25°C
1.0
6.67
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance
Junction to Case Rth (j-c) 175 °C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Typical Maximum Unit
Collector-Cut off Current ICES
VCE = 20V, IE = 0
Tamb = 125°C
VCE = 20V, IE = 0
- - 100
4.0
nA
µA
Collector-Base Voltage VCBO IC = 10µA, IE= 0 50 - - V
Collector-Emitter Voltage VCEO IC = 2mA, IB= 0 45 - V
Emitter-Base Voltage VEBO IE = 10µA, IC= 0 5.0 - -V
DC Current hFE
IC = 2mA, VCE = 5V
BC177
B Group
120
180
- 460
460 -
Collector Emitter Saturation Voltage VCE (Sat)
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
- - 0.20
0.60
VBase Emitter Saturation Voltage VBE (Sat) --
0.90
0.80
-
Base Emitter On Voltage VBE (on) IC = 2mA, VCE = 5V 0.60 - 0.75
BC177/BC177B Series
Low Power Bipolar Transistors
Page 3 21/04/06 V1.0
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Maximum Unit
Collector Knee Voltage VCE (K)
IC = 10mA, IB = The value
for which IC = 11mA
at VCE = 1V
-0.60 V
Transition Frequency ft
VCE = 5V, IC = 10mA,
f = 50MHz 200 - MHz
Noise Figure NF
VCE = 5V, IC = 0.2mA
Rg= 2kΩ
F = 1kHz,B = 200Hz
- 10 dB
Output Capacitance Cobo VCB = 10V, f = 1MHz - 4.0 pF
Small Signal Current Gain hfe
ALL f = 1kHz
IC = 2mA, VCE = 5V
BC177
B Group
125
240
500
500
-
Input Impedance hie
IC = 2mA, VCE = 5V
B Group 3.2 8.5 KΩ
Output Admittance hoe
IC = 2mA, VCE = 5V
B Group -60 umohs
Specifications
VCEO
(V)
VCBO
maximum
(V)
IC
(A)
hFE
minimum
at IC = 2mA
fT
minimum
(V)
Ptot
(mW) Type Package Part Number
45 50 0.2
120
200 600 PNP TO-18
BC177
180 BC177B
For enquiries from all other markets
BC177/BC177B Series
Low Power Bipolar Transistors
Page 4 21/04/06 V1.0
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