IINNEIRSIL 2N4351 N-Channel Enhancement FEATURES Mode MOS FET @ Low ON-Resistance 5022 PIN @ Low Capacitance 1.7 pF CONFIGURATION @ High Gain 3,000 zmhos TO-72 @ High Gate Breakdown Voltage +125 V @ Low Threshold Voltage 3 V ABSOLUTE MAXIMUM RATINGS (Note 1} @ 25C (unless otherwise noted) Maximum Temperatures Operating Junction Temperature ~55C to +150C Dec s Maximum Power Dissipation CHIP Total Dissipation at 25C Ambient Temp 375 mW TOPOGRAPHY Linear Derating Factor at 25: C Ambient Temp.3 mw/c 1003 SS x $053 be -- $B ~ | Maximum Voltages and Current - Voss Drain to Source and Body Voltage 25V i'r Vegg Transient Gate to Source Voltage +125 V ~ S028 5 9009 IDfon} Drain Current 100 mA i / toes * ons peo * boas NOTE: SUBSTRATE 18 BODY ORDERING INFORMATION TO-72 WAFER DICE 2N4351 | 2N4351/W | 2N4351/D ELECTRICAL CHARACTERISTICS (*, = 25C unless otherwise noted) Substrate connected to source. ) PARAMETER | MIN | MAX | UNITS | TEST CONDITIONS OFF CHARACTERISTICS : V{BRIDSS Drain-Source Breakdown Voltage 25 v Ip = 10 yA, Ves =0 less Gate Leakage Current / 10 pA VGs = t30 V, Vps = 0 Ipss Zero-Gate-Voltage Drain Current 10 nA VDs = 10 V, Veg =0 ON CHARACTERISTICS _ VGS(TH) Gate-Source Threshold Voltage 1.0 5 v Vbs= 10 V, Ip =10uA ID(on) ON Drain Current 3 mA VGs = 10V, Vps = 10 V VDS(on} Drain-Source ON" Voltage 4.0 Vv Ip =2 mA, Vgs=10V SMALL SIGNAL CHARACTERISTICS , "ds(on) Drain-Source Resistance 300 ohms VG6s = 10 V, Ip = 0, f = 1 kHz lytsl Forward Transfer Admittance 1000 | umho Vps = 10 V, Ip = 2 mA, f = 1 kHz Crsg Reverse Transfer Capacitance 130. pF Vos = 0, Vgs = 0, f = 140 kHz Ciss Input Capacitance 5.0 pF Vps = 10 V, VGs = 0, f = 140 kHz Cd (sub) Drain-Substrate Capacitance 5.0 pF VD(SUB) = 10 V, f= 140 kHz SWITCHING CHARACTERISTICS td(on) Turn-On Delay . 45 ns 1 a weg tr Rise Time 65 ns OE fet 196 td(off) Turn-Off Delay , 60 ns wee, op oe tf Fall Time 100 ns oe 1-69