VVZ 110 VVZ 175 IdAVM = 110/167 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge, B6HK VRSM VDSM VRRM VDRM V V 1300 1700 1200 1600 C ~ A Type 3 2 VVZ 110-12io7 VVZ 175-12io7 VVZ 175-16io7 1 E D C 3 2 1 B Symbol Test Conditions IdAV IFRMS, ITRMS TC = 85C; module per leg IFSM, ITSM TVJ = 45C; VR = 0 (di/dt)cr (dv/dt)cr 110 58 167 89 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 1500 1600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 1350 1450 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 11200 10750 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 9100 8830 A2 s A2 s TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 s VD = 2/3 VDRM IG = 0.3 A, non repetitive, diG/dt = 0.3 A/s, IT = 1/3 * IdAV TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM PGAVM TVJ TVJM Tstg 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Md Mounting torque (M6) Terminal connection torque (M6) typ. Weight 150 A/s 500 A/s 1000 V/s z z z V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 2500 3000 V~ V~ 515 % 515 % 300 Nm Nm g Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips UL registered E72873 Applications z z z Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Advantages z z 10 tp = 30 s tp = 500 s tp = 10 ms VISOL B - Features z VRGM PGM A + Maximum Ratings VVZ 110 VVZ 175 z I2t E ~ D ~ Easy to mount with two screws Space and weight savings Improved temperature and power cycling Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706b 1-2 http://store.iiic.cc/ VVZ 110 VVZ 175 Symbol Test Conditions Characteristic Values VVZ 110 VVZ 175 IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 200 A, TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; TVJ = TVJM; IL IG = 0.3 A; tG = 30 s diG/dt = 0.3 A/s IH tgd RthJH 1.75 1.57 V 0.85 6 0.85 3.5 V m 1.5 1.6 100 200 V V mA mA VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA 450 mA TVJ = 25C; VD = 6 V; RGK = 200 mA TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/s 2 s VG 2 0.65 0.108 0.8 0.133 0.46 0.077 0.55 0.092 K/W K/W K/W K/W 10 9.4 50 3 6 1 5 1 4 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 0.1 1 10 100 1000 IG mA Fig. 1 Gate trigger characteristics 120 A Creeping distance on surface Creepage distance in air Max. allowable acceleration dS dA a mA mA per thyristor (diode); DC current per module per thyristor (diode); DC current per module RthJC 5 0.3 TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 25C 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V TVJ = TVJM TVJ = 25C 10 IdAV VVZ 110 100 80 mm mm m/s2 60 40 20 0 0 50 100 C 150 TC Fig. 2 DC output current at case temperature Dimensions in mm (1 mm = 0.0394") M6x12 0.7 VVZ 110 50 Hz 80% VRRM 7 900 A 30 800 IFSM K/W VVZ 110 0.6 ZthJC 700 0.5 3 TVJ = 45C 600 0.4 94 80 72 26 500 0.3 26 400 15 TVJ = 125C 0.2 D ~ E ~ B - A + 4 2 5 1 6 12 2.8 x 0.8 0.1 200 3 7 25 66 M6 6 5 5 54 27 6.5 C ~ 6.5 300 100 10-3 10-2 10-1 100 t Fig. 3 Surge overload current IFSM: Crest value, t: duration IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved s 101 0.0 10-3 10-2 10-1 100 s 101 t Fig. 4 Transient thermal impedance junction to case (per leg) 20100706b 2-2 http://store.iiic.cc/