© 2010 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20100706b
VVZ 110
VVZ 175
IdAVM = 110/167 A
VRRM = 1200-1600 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
VRSM VRRM Type
VDSM VDRM
V V
1300 1200 VVZ 110-12io7 VVZ 175-12io7
1700 1600 VVZ 175-16io7
Features
zPackage with screw terminals
zIsolation voltage 3000 V~
zPlanar passivated chips
zUL registered E72873
Applications
zInput rectifier for PWM converter
zInput rectifier for switch mode power
supplies (SMPS)
zSoftstart capacitor charging
Advantages
zEasy to mount with two screws
zSpace and weight savings
zImproved temperature and power
cycling
Symbol Test Conditions Maximum Ratings
VVZ 110 VVZ 175
IdAV TC = 85°C; module 110 167 A
IFRMS, ITRMS per leg 58 89 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1150 1500 A
VR = 0 t = 8.3 ms (60 Hz), sine 1230 1600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 1350 A
VR = 0 t = 8.3 ms (60 Hz), sine 1070 1450 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 6600 11200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 6280 10750 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 9100 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 4750 8830 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 50 A 150 A/µs
f =400 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, 500 A/µs
diG/dt = 0.3 A/µs, IT = 1/3 • IdAV
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp =30µs ≤10 W
IT = ITAVM tp = 500 µs ≤5W
tp =10ms ≤1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M6) 5±15 % Nm
Terminal connection torque (M6) 5±15 % Nm
Weight typ. 300 g
Three Phase Half Controlled
Rectifier Bridge, B6HK
A
B
E
D
C
231
A
+
B
-
1
2
3
E
~
D
~
C
~
http://store.iiic.cc/
© 2010 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20100706b
VVZ 110
VVZ 175
0 50 100 150
0
20
40
60
80
100
120
A
IdAV
°C
TC
10-3 10-2 10-1 100101
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-3 10-2 10-1 100101
100
200
300
400
500
600
700
800
900
A
s
IFSM
t
s
t
K/W
ZthJC
50 Hz
80% VRRM
TVJ = 45°C
TVJ = 125°C
Symbol Test Conditions Characteristic Values
VVZ 110 VVZ 175
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM ≤5mA
TVJ = 25°C ≤0.3 mA
VF, VTIF, IT = 200 A, TVJ = 25°C ≤1.75 1.57 V
VT0 For power-loss calculations only 0.85 0.85 V
rT(TVJ = 125°C) 6 3.5 mΩ
VGT VD = 6 V; TVJ = 25°C ≤1.5 V
TVJ = -40°C ≤1.6 V
IGT VD = 6 V; TVJ = 25°C ≤100 mA
TVJ = -40°C ≤200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM ≤5mA
ILIG = 0.3 A; tG = 30 µs TVJ = 25°C ≤450 mA
diG/dt = 0.3 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤200 mA
tgd TVJ = 25°C; VD = ½ VDRM ≤2µs
IG = 0.3 A; diG/dt = 0.3 A/µs
RthJC per thyristor (diode); DC current 0.65 0.46 K/W
per module 0.108 0.077 K/W
RthJH per thyristor (diode); DC current 0.8 0.55 K/W
per module 0.133 0.092 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
Fig. 3 Surge overload current
IFSM: Crest value, t: duration
Fig. 1 Gate trigger characteristics
Fig. 2 DC output current at case
temperature
Fig. 4 Transient thermal impedance
junction to case (per leg)
VVZ 110 VVZ 110
VVZ 110
1 10 100 1000
0.1
1
10
I
G
V
G
m
A
1: I
GT
,T
VJ
=125°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
V
4: P
GAV
=0.5W
5: P
GM
=5W
6: P
GM
=10W
I
GD
,T
VJ
=125°C
4
2
156
3
M6x12
7
330
27
6.5
6.5
C~ D~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
5
5
6
7
2.8 x 0.8
M6
http://store.iiic.cc/
