Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com
Rev. 2.0, 22-Jul-10 1
Two-Line ESD-Protection in SOT-23
GSOT03C to GSOT36C
Vishay Semiconductors
MARKING (example only)
YYY = type code (see table below)
XX = date code
FEATURES
• Two-line ESD-protection device
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Space saving SOT-23 package
• AEC-Q101 qualified
•e3 - Sn
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20456
2
3
1
20512
1
20357
YYY
XX
XX
ORDERING INFORMATION
DEVICE NAME ENVIRONMENTAL
STATUS ORDERING CODE TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER
QUANTITY
GSOT03C Standard GSOT03C-GS08 3000 15 000
Green GSOT03C-V-G-08
GSOT04C Standard GSOT04C-GS08 3000 15 000
Green GSOT04C-V-G-08
GSOT05C Standard GSOT05C-GS08 3000 15 000
Green GSOT05C-V-G-08
GSOT08C Standard GSOT08C-GS08 3000 15 000
Green GSOT08C-V-G-08
GSOT12C Standard GSOT12C-GS08 3000 15 000
Green GSOT12C-V-G-08
GSOT15C Standard GSOT15C-GS08 3000 15 000
Green GSOT15C-V-G-08
GSOT24C Standard GSOT24C-GS08 3000 15 000
Green GSOT24C-V-G-08
GSOT36C Standard GSOT36C-GS08 3000 15 000
Green GSOT36C-V-G-08
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 85824
2Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Vishay Semiconductors Two-Line ESD-Protection in SOT-23
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
ENVIRONMENTAL
STATUS WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
GSOT03C SOT-23 03C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C1G Green 8.1 mg
GSOT04C SOT-23 04C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C8G Green 8.1 mg
GSOT05C SOT-23 05C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C2C Green 8.1 mg
GSOT08C SOT-23 08C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C3G Green 8.1 mg
GSOT12C SOT-23 12C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C4G Green 8.1 mg
GSOT15C SOT-23 15C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C5G Green 8.1 mg
GSOT24C SOT-23 24C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C6G Green 8.1 mg
GSOT36C SOT-23 36C Standard 8.8 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
C7G Green 8.1 mg
ABSOLUTE MAXIMUM RATINGS GSOT03C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
30 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
369 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 504 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS GSOT04C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
30 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
429 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 564 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com
Rev. 2.0, 22-Jul-10 3
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT05C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
30 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
480 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 612 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS GSOT08C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
18 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 18 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
345 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 400 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS GSOT12C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
12 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 12 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
312 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 337 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 85824
4Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Vishay Semiconductors Two-Line ESD-Protection in SOT-23
BiAs-MODE (2-line bidirectional asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line
is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1
and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and
asymmetrical (BiAs).
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
8A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 8A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
345 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 400 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
5A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 5A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
235 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 240 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM
3.5 A
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 3.5 A
Peak pulse power
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP
248 W
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot 252 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com
Rev. 2.0, 22-Jul-10 5
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in
parallel in order to “double” the performance.
This offers:
• double surge power = double peak pulse current (2 x IPPM)
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x CD)
• double reverse leakage current (2 x IR)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
L1
L2
20358
2 1
3
Ground
BiAs
L1
20359
2 1
3
Ground
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 100 μA VRWM 3.3 - - V
Reverse current at VR = 3.3 V IR- - 100 μA
Reverse breakdown voltage at IR = 1 mA VBR 44.6- V
Reverse clamping voltage at IPP = 1 A VC
-5.77.5V
at IPP = IPPM = 30 A - 10 12.3 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 420 600 pF
at VR = 1.6 V; f = 1 MHz - 260 - pF
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 20 μA VRWM 4--V
Reverse current at VR = 4 V IR- - 20 μA
Reverse breakdown voltage at IR = 1 mA VBR 56.1- V
Reverse clamping voltage at IPP = 1 A VC
-7.59 V
at IPP = IPPM = 30 A - 11.2 14.3 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 310 450 pF
at VR = 2 V; f = 1 MHz - 200 - pF
www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 85824
6Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Vishay Semiconductors Two-Line ESD-Protection in SOT-23
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
ELECTRICAL CHARACTERISTICS GSOT05C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 10 μA VRWM 5--V
Reverse current at VR = 5 V IR--10μA
Reverse breakdown voltage at IR = 1 mA VBR 66.8- V
Reverse clamping voltage at IPP = 1 A VC
-78.7V
at IPP = IPPM = 30 A - 12 16 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 30 A - 4.5 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 260 350 pF
at VR = 2.5 V; f = 1 MHz - 150 - pF
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 5 μA VRWM 8--V
Reverse current at VR = 8 V IR--5μA
Reverse breakdown voltage at IR = 1 mA VBR 910- V
Reverse clamping voltage at IPP = 1 A VC
- 10.7 13 V
at IPP = IPPM = 18 A - 15.2 19.2 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 18 A - 3 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 160 250 pF
at VR = 4 V; f = 1 MHz - 80 - pF
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 1 μA VRWM 12 - - V
Reverse current at VR = 12 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 - V
Reverse clamping voltage at IPP = 1 A VC
- 15.4 18.7 V
at IPP = IPPM = 12 A - 21.2 26 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 12 A - 2.2 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 115 150 pF
at VR = 6 V; f = 1 MHz - 50 - pF
Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com
Rev. 2.0, 22-Jul-10 7
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough
voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 1 μA VRWM 15 - - V
Reverse current at VR = 15 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 - V
Reverse clamping voltage at IPP = 1 A VC
- 19.4 23.5 V
at IPP = IPPM = 8 A - 24.8 28.8 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 8 A - 1.8 - V
Capacitance at VR = 0 V; f = 1 MHz CD
- 90 120 pF
at VR = 7.5 V; f = 1 MHz - 35 - pF
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 1 μA VRWM 24 - - V
Reverse current at VR = 24 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 27 30 - V
Reverse clamping voltage at IPP = 1 A VC
-3441V
at IPP = IPPM = 5 A - 41 47 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 5 A - 1.4 - V
Capacitance at VR = 0 V; f = 1 MHz CD
-6580pF
at VR = 12 V; f = 1 MHz - 20 - pF
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --2lines
Reverse working voltage at IR = 1 μA VRWM 36 - - V
Reverse current at VR = 36 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 39 43 - V
Reverse clamping voltage at IPP = 1 A VC
-4960V
at IPP = IPPM = 3.5 A - 59 71 V
Forward clamping voltage at IPP = 1 A VF
-11.2V
at IPP = IPPM = 3.5 A - 1.3 - V
Capacitance at VR = 0 V; f = 1 MHz CD
-5265pF
at VR = 18 V; f = 1 MHz - 12 - pF
www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 85824
8Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Vishay Semiconductors Two-Line ESD-Protection in SOT-23
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
L1
20361
2 1
3
Ground
BiSy
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 100 μA VRWM 3.8 - - V
Reverse current at VR = 3.8 V IR--100μA
Reverse breakdown voltage at IR = 1 mA VBR 4.5 5.3 - V
Reverse clamping voltage at IPP = 1 A VC
-78.4V
at IPP = IPPM = 30 A - 14 16.8 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 210 300 pF
at VR = 1.6 V; f = 1 MHz - 190 - pF
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 20 μA VRWM 4.5 - - V
Reverse current at VR = 4:5 V IR--20μA
Reverse breakdown voltage at IR = 1 mA VBR 5.5 6.8 - V
Reverse clamping voltage at IPP = 1 A VC
-7.59 V
at IPP = IPPM = 30 A - 15.7 18.8 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 155 225 pF
at VR = 2 V; f = 1 MHz - 135 - pF
ELECTRICAL CHARACTERISTICS GSOT05C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 10 μA VRWM 5.5 - - V
Reverse current at VR = 5.5 V IR--10μA
Reverse breakdown voltage at IR = 1 mA VBR 6.5 7.5 - V
Reverse clamping voltage at IPP = 1 A VC
-8.19.7V
at IPP = IPPM = 18 A - 17 20.4 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 130 175 pF
at VR = 4 V; f = 1 MHz - 100 - pF
Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com
Rev. 2.0, 22-Jul-10 9
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 5 μA VRWM 8.5 - - V
Reverse current at VR = 8.5 V IR--5μA
Reverse breakdown voltage at IR = 1 mA VBR 9.5 10.7 - V
Reverse clamping voltage at IPP = 1 A VC
- 11.7 14 V
at IPP = IPPM = 18 A - 18.5 22.2 V
Capacitance at VR = 0 V; f = 1 MHz CD
- 80 125 pF
at VR = 4 V; f = 1 MHz - 60 - pF
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 1 μA VRWM 12.5 - - V
Reverse current at VR = 12.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 13.5 15.7 - V
Reverse clamping voltage at IPP = 1 A VC
- 16.4 19.7 V
at IPP = IPPM = 12 A - 23.4 28.1 V
Capacitance at VR = 0 V; f = 1 MHz CD
-5875pF
at VR = 7.5 V; f = 1 MHz - 36 - pF
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 1 μA VRWM 15.5 - - V
Reverse current at VR = 15.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 17 18.7 - V
Reverse clamping voltage at IPP = 1 A VC
- 20.4 24.5 V
at IPP = IPPM = 8 A - 26.6 30.6 V
Capacitance at VR = 0 V; f = 1 MHz CD
-4560pF
at VR = 7.5 V; f = 1 MHz - 25 - pF
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 1 μA VRWM 24.5 - - V
Reverse current at VR = 24.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 27.5 30.7 - V
Reverse clamping voltage at IPP = 1 A VC
-3441V
at IPP = IPPM = 5 A - 40 48 V
Capacitance at VR = 0 V; f = 1 MHz CD
-3340pF
at VR = 12 V; f = 1 MHz - 18 - pF
www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 85824
10 Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Vishay Semiconductors Two-Line ESD-Protection in SOT-23
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse working voltage at IR = 1 μA VRWM 36.5 - - V
Reverse current at VR = 36.5 V IR--1μA
Reverse breakdown voltage at IR = 1 mA VBR 39.5 43.7 - V
Reverse clamping voltage at IPP = 1 A VC
-5060V
at IPP = IPPM = 3.5 A - 60 72 V
Capacitance at VR = 0 V; f = 1 MHz CD
-2633pF
at VR = 18 V; f = 1 MHz - 10 - pF
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
SOT-23
Vishay Semiconductors SOT-23
Document Number: 84004 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.3, 01-Jul-10 Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 28
PACKAGE DIMENSIONS in millimeters (inches)
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
SOT-23
Vishay Semiconductors SOT-23
Document Number: 84004 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.3, 01-Jul-10 Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 28
PACKAGE DIMENSIONS in millimeters (inches)
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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including but not limited to the warranty expressed therein.
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
