PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
28 November 2012 Product data sheet
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1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
•Average forward current: IF(AV) ≤ 1 A
•Reverse voltage: VR ≤ 40 V
•Low forward voltage
•High power capability due to clip-bonding technology
•Small and flat lead SMD plastic package
•AEC-Q101 qualified
•High temperature Tj ≤ 175 °C
1.3 Applications
•Low voltage rectification
•High efficiency DC-to-DC conversion
•Switch mode power supply
•Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current Tsp = 165 °C - - 1.4 A
δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C;
square wave
[1] - - 1 AIF(AV) average forward
current
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
- - 1 A
VRreverse voltage Tj = 25 °C - - 40 V
VFforward voltage IF = 1 A; Tj = 25 °C - 430 490 mV
IRreverse current Tj = 25 °C; VR = 40 V; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
- 10 50 µA
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
trr reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
- 4.4 - ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode[1]
2 A anode
21
SOD123W
sym001
1 2
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMEG4010ETR SOD123W plastic surface mounted package; 2 leads SOD123W
4. Marking
Table 4. Marking codes
Type number Marking code
PMEG4010ETR EJ
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage Tj = 25 °C - 40 V
IFforward current Tsp = 165 °C - 1.4 A
δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C;
square wave
[1] - 1 AIF(AV) average forward current
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
- 1 A
IFSM non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave - 50 A
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 3 / 13
Symbol Parameter Conditions Min Max Unit
[2] - 680 mW
[3] - 1150 mW
Ptot total power dissipation Tamb ≤ 25 °C
[1] - 2140 mW
Tjjunction temperature - 175 °C
Tamb ambient temperature -55 175 °C
Tstg storage temperature -65 175 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 220 K/W
[1][3] - - 130 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[1][4] - - 70 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[5] - - 18 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
006aab362
10
1
102
103
Zth(j-a)
(K/W)
10- 1
tp(s)
10- 3 102103
10110- 2 10- 1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 4 / 13
006aab363
10
1
102
103
Zth(j-a)
(K/W)
10- 1
tp(s)
10- 3 102103
10110- 2 10- 1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1
0.05
0.02 0.01
0
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab364
10
1
102
103
Zth(j-a)
(K/W)
10- 1
tp(s)
10- 3 102103
10110- 2 10- 1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
0
Ceramic PCB, Al2O3, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
IF = 0.1 A; Tj = 25 °C - 310 360 mV
IF = 1 A; Tj = 25 °C - 430 490 mV
IF = 1 A; Tj = -40 °C - 480 570 mV
IF = 1 A; Tj = 125 °C - 330 410 mV
IF = 1 A; Tj = 150 °C - 310 390 mV
VFforward voltage
IF = 1 A; Tj = 175 °C - 290 370 mV
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 5 / 13
Symbol Parameter Conditions Min Typ Max Unit
VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
- 3 13 µA
VR = 40 V; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
- 10 50 µA
VR = 40 V; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = -40 °C; pulsed
- 0.05 1 µA
IRreverse current
VR = 40 V; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 125 °C; pulsed
- 6.5 30 mA
VR = 1 V; f = 1 MHz; Tj = 25 °C - 130 - pFCddiode capacitance
VR = 10 V; f = 1 MHz; Tj = 25 °C - 50 - pF
trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
- 4.4 - ns
VFRM peak forward recovery
voltage
IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C - 484 - mV
006aad108
10-2
10-3
1
10-1
10
IF
(A)
10-4
VF (V)
0 1.00.80.4 0.60.2
(1)
(2)
(4) (5) (6)
(3)
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
006aad109
10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
IR
(A)
10-10
VR (V)
0 403010 20
(1)
(3)
(4)
(5)
(6)
(2)
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 6 / 13
VR(V)
0 403010 20
006aab367
100
150
50
200
250
Cd
(pF)
0
f = 1 MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
006aad111
IF(AV) (A)
0 1.51.00.5
0.2
0.3
0.1
0.4
0.5
PF(AV)
(W)
0
(1)
(2)
(3) (4)
Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
VR (V)
0 403010 20
006aad112
0.4
0.8
1.2
PR(AV)
(W)
0
(1)
(2)
(3)
(4)
Tj = 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
VR (V)
0 403010 20
006aad149
0.1
0.2
0.3
PR(AV)
(W)
0
(1)
(2)
(3)
(4)
Tj = 125 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 7 / 13
VR (V)
0 403010 20
006aad150
10
20
30
PR(AV)
(mW)
0
(1)
(2)
(3)
(4)
Tj = 85 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 10. Average reverse power dissipation as a
function of reverse voltage; typical values
Tamb (°C)
0 20015050 100
006aad113
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
Tamb (°C)
0 20015050 100
006aad114
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of
ambient temperature; typical values
Tamb (°C)
0 20015050 100
006aad115
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Ceramic PCB, Al2O3, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 13. Average forward current as a function of
ambient temperature; typical values
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 8 / 13
Tsp (°C)
0 20015050 100
006aad116
0.5
1.0
1.5
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 14. Average forward current as a function of solder point temperature; typical values
8. Test information
time
IF
IR
trr
IR(meas)
006aad022
Fig. 15. Reverse recovery definition
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 9 / 13
001aab912
time
time
VFRM
VF
IF
VF
Fig. 16. Forward recovery definition
tp
tcy
P
t
006aac658
duty cycle δ =
tp
tcy
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 10 / 13
9. Package outline
Fig. 18. Package outline SOD123W
10. Soldering
2.9
2.8
4.4
1.62.1 1.2
(2×)
1.1
(2×)
solder lands
solder resist
occupied area
solder paste
1.1
(2×)
1.2
(2×) sod123w_fr
Dimensions in mm
Fig. 19. Reflow soldering footprint for SOD123W
11. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMEG4010ETR v.2 20121128 Product data sheet - PMEG4010ETR v.1
Modifications: •Table 7. Characteristics: IR value corrected
PMEG4010ETR v.1 20120926 Product data sheet - -
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 11 / 13
12. Legal information
12.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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punitive, special or consequential damages (including - without limitation -
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 12 / 13
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors PMEG4010ETR
High-temperature 40 V, 1 A Schottky barrier rectifier
PMEG4010ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 28 November 2012 13 / 13
13. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information ............................................. 2
4 Marking ................................................................... 2
5 Limiting values .......................................................2
6 Thermal characteristics .........................................3
7 Characteristics .......................................................4
8 Test information ..................................................... 8
8.1 Quality information .........................................
9 Package outline ................................................... 10
10 Soldering .............................................................. 10
11 Revision history ...................................................10
12 Legal information .................................................11
12.1 Data sheet status ............................................... 11
12.2 Definitions ...........................................................11
12.3 Disclaimers .........................................................11
12.4 Trademarks ........................................................ 12
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 November 2012
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