2N7000BU/2N7000TA
BVDSS = 60 V
RDS(on) = 5.0 Ω
ID= 200 mA
60
200
110
1000
±30
400
3.2
- 55 to +150
300
312.5--
nFast Switching Times
nImproved Inductive Ruggedness
nLower Input Capacitance
nExtended Safe Operating Area
nImproved High Temperature Reliability
Advanced Small Signal MOSFET
Thermal Resistance
Junction-to-Ambient
RθJA ℃/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed ①
Gate-to-Source Voltage
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
Characteristic Value UnitsSymbol
IDM
VGS
ID
PD
TJ , TSTG
TL
mA
V
mW
mW/℃
mA
VDSS V
TO-92
1.Sour ce 2. Ga te 3. Drain
℃
Rev. A
N-CHANNEL
Small Signal MOSFET
Electrical Characteristics (TC=25℃unless otherwise specified)
Drain-Source Breakdown Voltage
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
Static Drain-Source
On-State Resistance ②
Forward Transconductance ②
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Ti me
Rise Time
Turn-Off Delay Time
Fall Time
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
BVDSS
RDS(on)
IGSS
IDSS
V
nA
μA
Ω
pF
ns
--
0.1
--
--
--
--
--
--
--
--
VGS=0V,ID=250μA
VDS= VGS,ID=250μA
VDS= VGS,ID=1mA
VGS=15V
VGS=-15V
VDS=60V
VDS=45V,TC=125℃
VGS=10V,ID=0.5A
VDS=15V,ID=0.5A
VDD=30V,ID=0.5A,
RG=15Ω②③
Drain-to-Source Leakage Cu rrent
VGS=0V,VDS=25V,
f =1MHz
2N7000BU/2N7000TA
60
0.3
0.4
--
--
--
--
--
--
--
--
--
--
--
12
3.0
--
--
--
--
--
3.9
2.2
100
-100
250
1000
5.0
--
--
--
--
10
10
10
10
0.3
30
Notes ;
①Repetitive Rating : Puls e Wi dth Lim i ted by Maximum Junction Temperature
②Pulse Test : P ulse Wi dt h = 250 μs, Duty Cycle ≤2%
③Essential l y Indep endent of Operating Tem perature
S
VGS(th)
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Gate Threshold Voltage V
