2SK3491
No.6959-1/4
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
Features
•Low ON-resistance.
•Low Qg.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6959
2SK3491
52101 TS IM TA-3255
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Package Dimensions
unit : mm
2083B
[2SK3491]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3 0.5
123
4
2.3 2.3
Package Dimensions
unit : mm
2092B
[2SK3491]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5 2.3 0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85 0.5
1.2
0 to 0.2
2.3 2.3
0.6
12
4
3
2SK3491
No.6959-2/4
PW=1µs
D.C.≤0.5%
P.G RGS
50Ω
G
S
ID=0.5A
RL=400Ω
VDD=200V
VIN VOUT
D
2SK3491
10V
0V
VIN
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20
0
IT02865 IT02866
VDS=10V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 5 10 15 20
Tc= --25°C
25°C
75°C
VGS=4.5V
5.0V
5.5V
6.0V
20.0V
10.0V
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID1.0 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4.0 A
Allowable Power Dissipation PD1.0 W
Tc=25°C20W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 600 V
Zero-Gate Voltage Drain Current IDSS VDS=600V, VGS=0 100 µA
Gate-to-Sourse Leakage Current IGSS VGS=±30V, VDS=0 ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V
Forward T ransfer Admittance yfsVDS=10V, ID=0.5A 430 850 mS
Static Drain-to-Source On-State Resistance RDS(on) VDS=10V, ID=0.5A 8.5 11 Ω
Input Capacitance Ciss VDS=20V, f=1MHz 135 pF
Output Capacitance Coss VDS=20V, f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 20 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=1.0A 6 nC
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise T ime trSee specified Test Circuit 7 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time tfSee specified Test Circuit 30 ns
Diode Forward Voltage VSD IS=1.0A, VGS=0 0.83 1.2 V
Marking : K3491
Switching Time Test Circuit
2SK3491
No.6959-3/4
y
fs -- ID
Forward Transfer Admittance, yfs -- S
Drain Current, ID -- A
VGS(off) -- Tc
Cutoff Voltage, VGS(off) -- V
Case Temperature, Tc -- °C
IF -- VSD
Forward Current, IF -- A
Diode Forward Voltage, VSD -- V
SW Time -- ID
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Drain-to-Source Voltage, VSD -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Case Temperature, Tc -- °C
0.1 23 57
1.0 23
IT02870
VDS=10V
0.1
1.0
2
3
5
7
2
3
7
0
1
2
3
4
5
--50 0 50 100 150
IT02869
VDS=10V
ID=1mA
0.001
2
5
7
2
0.01
0.1
3
5
7
3
5
7
2
1.0
3
5
7
2
10
3
0.4 0.6 0.8 1.0 1.2 1.40.20
IT02871
VGS=0
Tc=75°C
25°C
--25°C
1.0
10
2
5
7
100
3
2
5
7
3
2
1000
3
5
7
23 57
1.00.1 23
IT02872
VDD=200V
VGS=10V
td(on)
tr
td(off)
tf
1.0
3
7
2
5
10
3
7
2
5
100
3
7
2
5
1000
0 5 10 15 20 25 30 35
IT02873
f=1MHz
Ciss
Coss
Crss
Forward Bias A S O
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
0.1
1.0
5
7
3
2
10
5
7
3
2
0.01
5
7
3
2
23 57
1001.0 23 57
10 23 1000
57
IT02874
DC operation
10ms
1ms
100µs
100ms
≤10µs
IDP=4A
ID=1A
Operation in this area
is limited by RDS(on).
75°C
25
°
C
Tc= --25°C
0
5
10
15
20
25
02468101214161820
IT02867
0
2
4
6
8
10
12
14
16
18
20
--50 --25 0 25 50 75 100 125 150
IT02868
ID=1.0A
0.5A0.1A Tc=25°C
Tc=25°C
Single pulse
Switching Time, SW Time -- ns
Drain Current, ID -- A
ID=0.5A
VGS=10V
2SK3491
No.6959-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.
PS
0 20 40 60 80 100 120 140 160
PD -- Tc
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
IT02875
0
5
10
15
20
25
30
0 20 40 60 80 100 120 140 160
PD -- Ta
Amibient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
IT02876
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
