1. General description
The HEF4013B-Q100 is a dual D-type flip-flop that features independent set-direct input
(SD), clear-direct input (CD), clock input (CP) and outputs (Q, Q). Data is accepted when
CP is LOW and is transferred to the output on the positive-going edge of the clock. The
active HIGH asynchronous CD and SD inputs are independent and override the D or CP
inputs. The outputs are buffered for best system performance. The Schmitt trigger action
of the clock inputs, makes the circuit highly tolerant of slower clock rise and fall times.
It operates over a recommended VDD power supply r ange of 3 V to 15 V referenced to V SS
(usually ground). Connect unused inputs to VDD, VSS, or another input.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Tolerant of slow clock rise and fall times
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )
Complies with JEDEC standard JESD 13-B
3. Applications
Counters and dividers
Registers
Toggle flip-flops
HEF4013B-Q100
Dual D-type flip-flop
Rev. 2 — 20 February 2013 Product data sheet
HEF4013B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 20 February 2013 2 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
4. Ordering information
5. Functional diagram
Table 1. Ordering information
All types operate from
40
C to +125
C
Type number Package
Name Description Version
HEF4013BP-Q100 DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
HEF4013BT-Q100 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
HEF4013BTT-Q100 TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
Fig 1. Functional di agram
001aag084
1SD
1D
1CP
1CD
2SD
2D 2Q
2Q
1Q
1Q
13
12
1
2
2CP
2CD
6
5
3
4
8
9
11
10
SD
CD
DQ
FF1
CP Q
SD
CD
DQ
FF2
CP Q
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Product data sheet Rev. 2 — 20 February 2013 3 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
6. Pinning information
6.1 Pinning
6.2 Pin description
Fig 2. Logic diagra m (one flip-flop)
D
SD
CD
CP
C
C
001aag086
C
C
C
C
C
C
C
CQ
Q
Fig 3. Pin configuratio n
+()%4
4
9''
4
4
&3 4
&' &3
'
&'
6' '
96
6
6'
DDD





Table 2. Pin description
Symbol Pin Description
1Q, 2Q 1, 13 true output
1Q, 2Q 2, 12 complement output
1CP, 2CP 3, 11 clock input (LOW to HIGH edge-triggered)
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Product data sheet Rev. 2 — 20 February 2013 4 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
7. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; = LOW-to-HIGH clock transition.
8. Limiting values
[1] For DIP14 packages: above Tamb = 70 C, Ptot derates linearly with 12 mW/K.
[2] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
[3] For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K.
1CD, 2CD 4, 10 asynchronous clear-direct input (active HIGH)
1D, 2D 5, 9 data input
1SD, 2SD 6, 8 asynchronous set-direct input (active HIGH)
VSS 7 ground (0 V)
VDD 14 supply voltage
Table 2. Pin descriptioncontinued
Symbol Pin Description
Table 3. Function table[1]
Control Input Output
nSD nCD nCP nD nQ nQ
HLXXHL
LHXXLH
HHXXHH
LLLLH
LLHHL
Table 4. L imiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol Parameter Conditions Min Max Unit
VDD supply voltage 0.5 +18 V
IIK input clamping current VI<0.5 V or VI>V
DD + 0.5 V - 10 mA
VIinput voltage 0.5 VDD + 0.5 V
IOK output clamping current VO<0.5 V or VO>V
DD + 0.5 V - 10 mA
II/O input/output current - 10 mA
IDD supply current - 50 mA
Tstg storage temperature 65 +150 C
Tamb ambient temperature 40 +125 C
Ptot total power dissipation Tamb = 40 C to +125 C
DIP14 [1] - 750 mW
SO14 [2] - 500 mW
TSSOP14 [3] - 500 mW
P power dissipation per output - 100 mW
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Product data sheet Rev. 2 — 20 February 2013 5 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
9. Recommended operating conditions
10. Static characteristics
Table 5. Recommended op erating conditions
Symbol Parameter Conditions Min Max Unit
VDD supply voltage 3 15 V
VIinput voltage 0 VDD V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate VDD = 5 V - 3.75 s/V
VDD = 10 V - 0 .5 s/V
VDD = 15 V - 0.08 s/V
Table 6. Static characteristics
VSS = 0 V; VI=V
SS or VDD; unless otherwise specified.
Symbol Parameter Conditions VDD Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 CUnit
Min Max Min Max Min Max Min Max
VIH HIGH-level
input voltage IO < 1 A 5 V 3.5 - 3.5 - 3.5 - 3.5 - V
10 V 7.0 - 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - 11.0 - V
VIL LOW-level
input voltage IO < 1 A 5 V - 1.5 - 1.5 - 1.5 - 1.5 V
10 V - 3.0 - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 - 4.0 V
VOH HIGH-level
output voltage IO < 1 A 5 V 4.95 - 4.95 - 4.95 - 4.95 - V
10 V 9.95 - 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - 14.95 - V
VOL LOW-level
output voltage IO < 1 A 5 V - 0.05 - 0.05 - 0.05 - 0.05 V
10 V - 0.05 - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 - 0.05 V
IOH HIGH-level
output current VO = 2.5V 5V - 1.7 - 1.4 - 1.1 - 1.1 mA
VO = 4.6 V 5 V - 0.64 - 0.5 - 0.36 - 0.36 mA
VO = 9.5 V 10 V - 1.6 - 1.3 - 0.9 - 0.9 mA
VO = 13.5 V 15 V - 4.2 - 3.4 - 2.4 - 2.4 mA
IOL LOW-level
output current VO = 0.4 V 5 V 0.64 - 0.5 - 0.36 - 0.36 - mA
VO = 0.5 V 10 V 1.6 - 1.3 - 0.9 - 0.9 - mA
VO = 1.5 V 15 V 4.2 - 3.4 - 2.4 - 2.4 - mA
IIinput leakage
current 15 V - 0.1 - 0.1 - 1.0 - 1.0 A
IDD supply current all valid input
combinations;
IO=0 A
5 V - 1.0 - 1.0 - 30 - 30 A
10 V - 2.0 - 2.0 - 60 - 60 A
15 V - 4.0 - 4.0 - 120 - 120 A
CIinput
capacitance - ---7.5-- - -pF
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Product data sheet Rev. 2 — 20 February 2013 6 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
11. Dynamic characteristics
Table 7. Dynamic characteristics
Tamb = 25
C; unless otherwise specified. For test circuit see Figure 6.
Symbol Parameter Conditions VDD Extrapolation formula Min Typ Max Unit
tPHL HIGH to LOW
propagation delay nC P to nQ, nQ;
see Figure 4 5 V [1] 83 + 0.55 CL- 110 220 ns
10 V 34 + 0.23 CL- 4590ns
15 V 22 + 0.16 CL- 3060ns
nSD to nQ 5 V [1] 73 + 0.55 CL- 100 200 ns
10 V 29 + 0.23 CL- 4080ns
15 V 22 + 0.16 CL- 3060ns
nCD to nQ 5 V [1] 73 + 0.55 CL- 100 200 ns
10 V 29 + 0.23 CL- 4080ns
15 V 22 + 0.16 CL- 3060ns
tPLH LOW to HIGH
propagation delay nC P to nQ, nQ;
see Figure 4 5 V [1] 68 + 0.55 CL-95190ns
10 V 29 + 0.23 CL- 4080ns
15 V 22 + 0.16 CL- 3060ns
nSD to nQ 5 V [1] 48 + 0.55 CL-75150ns
10 V 24 + 0.23 CL- 3570ns
15 V 17 + 0.16 CL- 2550ns
nCD to nQ 5 V [1] 33 + 0.55 CL-60120ns
10 V 19 + 0.23 CL- 3060ns
15 V 12 + 0.16 CL- 2040ns
tttransition time see Figure 4 5 V [1] 10 + 1.00 CL-60120ns
10 V 9 + 0.42 CL- 3060ns
15 V 6 + 0.28 CL- 2040ns
tsu set-up time nD to nCP;
see Figure 4 5 V 40 20 - ns
10 V 25 10 - ns
15 V 15 5 - ns
thhold time nD to nCP;
see Figure 4 5 V 20 0 - ns
10 V 20 0 - ns
15 V 15 0 - ns
tWpulse width nCP input LOW;
see Figure 4 5 V 60 30 - ns
10 V 30 15 - ns
15 V 20 10 - ns
nSD input HIGH;
see Figure 5 5 V 50 25 - ns
10 V 24 12 - ns
15 V 20 10 - ns
nCD input HIGH;
see Figure 5 5 V 50 25 - ns
10 V 24 12 - ns
15 V 20 10 - ns
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Product data sheet Rev. 2 — 20 February 2013 7 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
[1] Typical values of the propagation delays and output transition times can be calculated with the extrapolation formulas. CL is given in pF.
12. Waveforms
trec recovery time nSD input;
see Figure 5 5 V +15 5- ns
10 V 15 0 - ns
15 V 15 0 - ns
nCD input;
see Figure 5 5 V 40 25 - ns
10 V 25 10 - ns
15 V 25 10 - ns
fclk(max) maximum clock
frequency see Figure 4 5 V 7 14 - MHz
10 V 14 28 - MHz
15 V 20 40 - MHz
Table 7. Dynamic characteristics …continu ed
Tamb = 25
C; unless otherwise specified. For test circuit see Figure 6.
Symbol Parameter Conditions VDD Extrapolation formula Min Typ Max Unit
Table 8. Dyn amic power dissipation
VSS = 0 V; tr = tf
20 ns; Tamb = 25
C.
Symbol Parameter VDD Typical formula Where
PDdynamic power dissipation 5 V PD = 850 fi + (fo CL) VDD2 Wf
i = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
(fo CL) = sum of the outputs;
VDD = supply voltage in V.
10 V PD = 3600 fi + (fo CL) VDD2W
15 V PD = 9000 fi + (fo CL) VDD2 W
Set-up and hold times are shown as positive values but may be specified as negative values.
The shaded areas indicate when the input is permitted to change for predictable output performance.
Measurement points are given in Table 9.
Fig 4. Set-up time, hold time , minimum clock pu ls e wi dth, propagation delays and transition times
001aah016
0 V
0 V
th
tsu
1/fclk(max)
th
tsu tftr
tW
VM
VM
VM
VI
VOH
VOL
VI
output nQ
input nCP
input nD
tt
tt
tPHL
tPLH
VY
VX
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Product data sheet Rev. 2 — 20 February 2013 8 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
Recovery times are shown as positive values but may be specified as negative values.
Measurement points are given in Table 9.
Fig 5. nSD, nCD recovery time and pulse width
001aag088
input nSD
input nCD
input nCP
VI
0 V
0 V
VOL
0 V
VI
VI
VOH
tW
VM
tW
VM
VM
output nQ
trec trec
Table 9. Mea surement points
Supply voltage Input Output
VDD VMVMVXVY
5 V to 15 V 0.5VDD 0.5VDD 0.1VDD 0.9VDD
Test and measurement data is given in Table 10;
Definitions test circuit:
DUT = Device Under Test.
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
Fig 6. Test circuit for measuring switching times
VDD
VIVO
001aag182
DUT
CL
RT
G
Table 10 . Test da ta
Supply voltage Input Load
VDD VItr, tfCL
5 V to 15 V VSS or VDD 20 ns 50 pF
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Product data sheet Rev. 2 — 20 February 2013 9 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
13. Application information
Fig 7. N-stage shift register
Fig 8. Binary ripple up-coun te r; di vide-by-2n
Fig 9. Modified ring counte r; div ide -by-(n + 1)
001aag089
CP
FF
1
Q
Q
DDQ
clock
CP
FF
2
Q
Q
D
CP
FF
n
Q
Q
D
001aag090
CP
T-type flip-flop
FF
1
Q
Q
DQ
clock CP
FF
2
Q
Q
D
CP
FF
n
Q
Q
D
001aag091
CP
FF
1
Q
Q
DQ
clock
CP
FF
2
Q
Q
D
CP
FF
n
Q
Q
D
HEF4013B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 20 February 2013 10 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
14. Package outline
Fig 10. Package outline SOT27-1 (DIP14)
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Product data sheet Rev. 2 — 20 February 2013 11 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
Fig 11. Package outline SOT108-1 (SO14)
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 8.75
8.55 4.0
3.8 1.27 6.2
5.8 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT108-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
7
8
1
14
y
076E06 MS-012
pin 1 index
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.35
0.34 0.16
0.15 0.05
1.05
0.041
0.244
0.228 0.028
0.024 0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
99-12-27
03-02-19
0 2.5 5 mm
scale
SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
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Product data sheet Rev. 2 — 20 February 2013 12 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
Fig 12. Package outline SOT402-1 (TSSOP14)
UNIT A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
0.05 0.95
0.80 0.30
0.19 0.2
0.1 5.1
4.9 4.5
4.3 0.65 6.6
6.2 0.4
0.3 0.72
0.38 8
0
o
o
0.13 0.10.21
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT402-1 MO-153 99-12-27
03-02-18
wM
bp
D
Z
e
0.25
17
14 8
θ
A
A1
A2
Lp
Q
detail X
L
(A )
3
HE
E
c
vMA
X
A
y
0 2.5 5 mm
scale
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
A
max.
1.1
pin 1 index
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Product data sheet Rev. 2 — 20 February 2013 13 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
15. Abbreviations
16. Revision history
Table 11. Abbr eviation s
Acronym Description
HBM Human Body Model
ESD ElectroStatic Discharge
MM Machine Model
MIL Military
Table 12. Revision history
Document ID Release date Data sheet st a tus Change notice Supersedes
HEF4013B_Q100 v.2 20130220 Product data sheet - HEF4013B_Q100
Modifications: HEF4013BP-Q100 (DIP14) added.
HEF4013B_Q100 v.1 20120807 Product data sheet - -
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Product data sheet Rev. 2 — 20 February 2013 14 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
17. Legal information
17.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificationThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Semiconductors product has been qualified for use in automotive
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Applications — Applications that are described herein for any of these
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representation or warranty tha t such application s will be suitable for the
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Customers are responsible for the design and ope ration of their applications
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NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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agreement shall apply. NXP Semiconductors hereby expressly object s to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specif ication for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] dat a sheet Production This document contains the product specification.
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Product data sheet Rev. 2 — 20 February 2013 15 of 16
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
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Export control — This document as well as the item(s) described herein
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Translations — A non-English (translated) versio n of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
17.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors HEF4013B-Q100
Dual D-type flip-flop
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 February 2013
Document identifier: HEF4013B_Q100
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
19. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Functional description . . . . . . . . . . . . . . . . . . . 4
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Recommended operating conditions. . . . . . . . 5
10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Application information. . . . . . . . . . . . . . . . . . . 9
14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
16 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
17.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
17.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
17.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
17.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
18 Contact information. . . . . . . . . . . . . . . . . . . . . 15
19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16