2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES * * * * * * Repetitive Avalanche Rating Isolated and Hermetically Sealed Low RDS(on) Ease of Paralleling Ceramic Feedthroughs Qualified to MIL-PRF-19500 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25C PART NUMBER 2N7224 2N7225 2N7227 2N7228 V DS, Volts 100 200 400 500 R DS(on) .070 .100 .315 .415 S C H E M ATIC ID, A m p s 34 27.4 14 12 MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .800 .790 .685 .665 1 2 Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate .550 .530 3 .550 .510 .005 .045 .035 .150 TYP. .150 TYP. 4 11 R0 3.1 - 1 .260 .249 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N7224 Units Continuous Drain Current 34 A ID @ VGS = 10V, TC = 100C Continuous Drain Current 21 A Pulsed Drain Current 136 A Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 ID M P D @ TC = 25C VG S Gate-Source Voltage EA S 20 Single Pulse Avalanche Energy 2 150 1 V 4 IA R Avalanche Current 34 4 EA R TJ TS T G Repetitive Avalanche Energy1 Operating Junction Storage Temperature Range Lead Temperature 15 4 -55 to 150 300(.06 from case for 10 sec) mJ A mJ C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 100 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 21 A 3 VG S = 10 V, ID = 34 A 3 VDS = VG S,ID = 250 A VD S = 80 V, VG S = 0V VD S = 80 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 34A VD S = 50 V See note 4 VD D = 50 V, ID = 21A, RG = 2.35 See note 4 ----------------------------- 0.07 0.081 4.0 25 250 100 -100 125 22 65 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.8 500 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V A Test Conditions TJ = 25C, IS = 34A 3,VG S = 0 V TJ = 25C, IF= 34A,di/dt<100A/s Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 25V, Starting TJ = 25C, L > 200 H, RG = 25 , Peak IL = 34A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/592 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N7225 Continuous Drain Current ID @ VGS = 10V, TC = 100C Continuous Drain Current Units 27.4 A 17 A ID M Pulsed Drain Current 110 A P D @ TC = 25C Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy 20 IA R Avalanche Current1 2 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 500 4 mJ 27.4 4 A 15 4 mJ -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 200 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 17 A 3 VG S = 10 V, ID = 27.4 A 3 VDS = VG S,ID = 250 A VD S = 160 V, VG S = 0V VD S = 160 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 27.4A VD S = 100 V See note 4 VD D = 100 V, ID = 17A, RG = 2.35 See note 4 ----------------------------- 0.100 0.105 4.0 25 250 100 -100 115 22 60 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.9 950 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V A Test Conditions TJ = 25C, IS = 27.4A 3,VG S = 0 V TJ = 25C, IF= 27.4A,di/dt<100A/s Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25C, L > 1 mH, RG = 25 , Peak IL = 27.4A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/592 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N7227 Units Continuous Drain Current 14 A ID @ VGS = 10V, TC = 100C Continuous Drain Current 9.0 A ID M Pulsed Drain Current 56 A P D @ TC = 25C Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy 20 IA R Avalanche Current1 2 700 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 4 mJ 14 4 A 15 4 mJ -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 400 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 9.0 A 3 VG S = 10 V, ID = 14 A 3 VDS = VG S,ID = 250 A VD S = 320 V, VG S = 0V VD S = 320 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 14A VD S = 200 V See note 4 VD D = 200 V, ID = 9 A, RG = 2.35 See note 4 ----------------------------- 0.315 0.415 4.0 25 250 100 -100 110 18 65 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.7 1200 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V A Test Conditions TJ = 25C, IS = 14A 3,VG S = 0 V TJ = 25C, IF= 14A,di/dt<100A/s Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25C, L > 6.25 mH, RG = 25 , Peak IL = 14A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/592 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N7228 Units Continuous Drain Current 12 A ID @ VGS = 10V, TC = 100C Continuous Drain Current 8.0 A ID M Pulsed Drain Current 48 A P D @ TC = 25C Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy 20 IA R Avalanche Current1 2 750 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 4 mJ 12 4 A 15 4 mJ -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 500 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 8.0 A 3 VG S = 10 V, ID = 12 A 3 VDS = VG S,ID = 250 A VD S = 400 V, VG S = 0V VD S = 400 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 12A VD S = 250 V See note 4 VD D = 250 V, ID = 8A, RG = 2.35 See note 4 ----------------------------- 0.415 0.515 4.0 25 250 100 -100 120 19 70 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.7 1600 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V A Test Conditions TJ = 25C, IS = 12A 3,VG S = 0 V TJ = 25C, IF= 12A,di/dt<100A/s Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25C, L > 9.4 mH, RG = 25 , Peak IL = 12A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/592 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246