FEATURES
• Repetitive Avalanche Rating
• Isolated and Hermetically Sealed
• Low RDS(on)
• Ease of Paralleling
• Ceramic Feedthroughs
• Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology . It is
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
pulse circuits.
3.1 - 1
4 11 R0
100V Thru 500V, Up to 34A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/592
.144 DIA. .050
.040
.260
.249
.685
.665 .800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
MECHANICAL OUTLINESCHEMATIC
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
123
PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25
°
C
PART NUMBER VDS, V olts R DS(on) I
D, Amps
2N7224 100 .070 34
2N7225 200 .100 27.4
2N7227 400 .315 14
2N7228 500 .415 12
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227
2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 100 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ 0.07 V GS = 10 V, I D= 21 A 3
On-State Resistance ------ 0.081 V GS = 10 V, I D= 34 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 80 V, V GS = 0V
Current ------ 250 VDS = 80 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge ------ 125 nC VGS = 10 V, I D= 34A
QGS Gate-to-Source Charge ------22nCV
DS = 50 V
QGd Gate-to-Drain (“Miller”) Charge ------ 65 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 50 V, I D= 21A, RG = 2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.8 V T J= 25°C, I S= 34A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 500 ns TJ= 25°C, IF= 34A,d i/dt<100A/µs
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 25V, Starting TJ= 25°C, L > 200 µH, RG = 25 , Peak IL = 34A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N7224 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 34 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 21 A
I
DM Pulsed Drain Current1136 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 2150 4mJ
I
AR Avalanche Current134 4A
EAR Repetitive Avalanche Energy115 4mJ
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227
2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 200 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ 0.100 V GS = 10 V, I D= 17 A 3
On-State Resistance ------ 0.105 V GS = 10 V, I D= 27.4 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 160 V, VGS = 0V
Current ------ 250 VDS = 160 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge ------ 115 n C V GS = 10 V, I D= 27.4A
QGS Gate-to-Source Charge ------22nCV
DS = 100 V
QGd Gate-to-Drain (“Miller”) Charge ------ 60 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 100 V, I D= 17A, RG = 2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.9 V T J= 25°C, I S= 27.4A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 950 ns TJ= 25°C, IF= 27.4A,d i/dt<100A/µs
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50V, Starting TJ= 25°C, L > 1 mH, RG = 25 , Peak I L = 27.4A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N7225 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 27.4 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 17 A
I
DM Pulsed Drain Current1110 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 2500 4mJ
I
AR Avalanche Current127.4 4A
EAR Repetitive Avalanche Energy115 4mJ
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227
2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 400 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ 0.315 V GS = 10 V, I D= 9.0 A 3
On-State Resistance ------ 0.415 V GS = 10 V, I D= 14 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 320 V, VGS = 0V
Current ------ 250 VDS = 320 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge ------ 110 n C V GS = 10 V, I D= 14A
QGS Gate-to-Source Charge ------18nCV
DS = 200 V
QGd Gate-to-Drain (“Miller”) Charge ------ 65 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 200 V, I D= 9 A, RG = 2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.7 V T J= 25°C, I S= 14A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 1200 ns TJ= 25°C, I F= 14A,di/dt<100A/µs
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50V, Starting TJ= 25°C, L > 6.25 mH, RG = 25 , Peak I L = 14A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N7227 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 14 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 9.0 A
I
DM Pulsed Drain Current156 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 2700 4mJ
I
AR Avalanche Current114 4A
EAR Repetitive Avalanche Energy115 4mJ
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227
2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 500 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ 0.415 V GS = 10 V, I D= 8.0 A 3
On-State Resistance ------ 0.515 V GS = 10 V, I D= 12 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 400 V, VGS = 0V
Current ------ 250 VDS = 400 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge ------ 120 nC VGS = 10 V, I D= 12A
QGS Gate-to-Source Charge ------19nCV
DS = 250 V
QGd Gate-to-Drain (“Miller”) Charge ------ 70 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 250 V, I D= 8A, RG = 2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.7 V T J= 25°C, I S= 12A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 1600 ns TJ= 25°C, I F= 12A,di/dt<100A/µs
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50V, Starting TJ= 25°C, L > 9.4 mH, RG = 25 , Peak I L = 12A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N7228 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 12 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 8.0 A
I
DM Pulsed Drain Current148 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 2750 4mJ
I
AR Avalanche Current112 4A
EAR Repetitive Avalanche Energy115 4mJ
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227
2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228
