HA17555FP - Renesas Technology / Hitachi Semiconductor

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regar ding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

license under any intellectual property rights, or any other rights, belonging to Renesas Technology

Corporation or a third party.

2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any

third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are

subject to change by Renesas Technology Corporation without notice due to product improvements or

other reasons. It is therefore recommended that customers contact Renesas Technology Corporation

or an authorized Renesas Technology Corporation product distributor for the latest product information

before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss

rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corporation by various

means, including the Renesas Technology Corporation Semiconductor home page

(http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before

making a final decision on the applicability of the information and products. Renesas Technology

Corpo r ation assumes no respon sibility for any damage, liability or other loss resulting from the

information contained herein.

5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device

or system that is used under circumstances in which human life is potentially at stake. Please contact

Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor

when considering the use of a product contained herein for any specific purposes, such as apparatus or

systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in

whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other

than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the

country of destination is prohibited.

8. Please contact Renesas Technology Corporation for further details on these materials or the products

contained therein.

HAT2029R

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-525D (Z)

5th. Edition

Feb. 1999

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

SOP–8

1234

MOS1 MOS2

1, 3 Source

2, 4 Gate

5, 6, 7, 8 Drain

HAT2029R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 28 V

Gate to source voltage VGSS ±12 V

Drain current ID7.5 A

Drain peak current ID(pulse)Note1 60 A

Body-drain diode reverse drain current IDR 7.5 A

Channel dissipation Pch Note2 2W

Channel dissipation Pch Note3 3W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

HAT2029R

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage V(BR)DSS 28——V I

D = 10mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±12——V I

G = ±100µA, VDS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±10V, VDS = 0

Zero gate voltege drain current IDSS ——1 µAV

DS = 28 V, VGS = 0

Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V VDS = 10V, I D = 1mA

Static drain to source on state RDS(on) — 0.025 0.033 ΩID = 4A, VGS = 4V Note4

resistance RDS(on) — 0.031 0.043 ΩID = 4A, VGS = 2.5V Note4

Forward transfer admittance |yfs| 9.5 15 — S ID = 4A, VDS = 10V Note4

Input capacitance Ciss — 780 — pF VDS = 10V

Output capacitance Coss — 470 — pF VGS = 0

Reverse transfer capacitance Crss — 190 — pF f = 1MHz

Turn-on delay time td(on) — 20 — ns VGS = 4V, ID = 4A

Rise time tr— 170 — ns VDD ≅ 10V

Turn-off delay time td(off) — 140 — ns

Fall time tf— 170 — ns

Body–drain diode forward

voltage VDF — 0.88 1.15 V IF = 7.5A, VGS = 0 Note4

Body–drain diode reverse

recovery time trr — 65 — ns IF = 7.5A, VGS = 0

diF/ dt =20A/µs

Note: 4. Pulse test

HAT2029R

Main Characteristics

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

Note 5 :

When using the glass epoxy board

(FR4 40x40x1.6 mm)

4.0

3.0

2.0

1.0

050 100 150 200

100

0.3

0.1

0.03

0.01

0.1 0.3 1 3 10 30 100

10 µs

1 ms

PW = 10 ms

0246810

10 V 6 V

3 V

3.5 V

V = 1.5 V

4 V

5 V 50

012345

Tc = –25 °C

75 °C

25 °C

2 Drive Operation

1 Drive Operation

Operation in

this area is

limited by RDS(on)

Pulse Test V = 10 V

Pulse Test

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW < 10 s

Note 5

DC Operation (PW < 10 s)

Ta = 25 °C

1 shot Pulse

1 Drive Operation

100 µs

2.5 V

2 V

HAT2029R

Gate to Source Voltage V (V)

Drain to Source Voltage V (V)

DS(on)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current I (A)

Drain to Source On State Resistance

R ( )

Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |yfs| (S)

Drain Current I (A)

Forward Transfer Admittance vs.

Drain Current

0.5

0.4

0.3

0.2

0.1

0246810

2 A

1 A

I = 5 A

0.2 0.5 1251020

0.2

0.1

0.02

0.05

0.01

0.005

0.10

0.08

0.06

0.04

0.02

–40 0 40 80 120 160

I = 5 A

1 A, 2 A, 5 A

0.2 0.5 1 2 510

0.5

Pulse Test

0.002

4 V

V = 2.5 V

Pulse Test

4 V

V = 2.5 V

2 A 1 A

25 °C

Tc = –25 °C

75 °C

V = 10 V

Pulse Test

HAT2029R

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Dynamic Input Characteristics

0.2 0.5 1 2 5 10

500

200

100

50 10 20 30 40 50

10000

3000

1000

300

100

V = 0

f = 1 MHz

4 8 12 16 20

0.1

di/dt = 20 A/µs

V = 0, Ta = 25°C

Ciss

Coss

Crss

VGS

VDS

V = 5 V

10 V

20 V

V = 20 V

10 V

5 V

I = 7.5 A

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

0.2 0.5 1 2 5 10

500

200

100

0.1

d(on)

d(off)

V = 4 V, V = 10 V

PW = 3 µs, duty < 1 %

GS DD

HAT2029R

Vin Monitor

D.U.T.

Vin

4 V

= 10 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

Switching Time Test Circuit Switching Time Waveform

00.4 0.8 1.2 1.6 2.0

V = 0, –5 V

5 V

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

HAT2029R

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

D = PW

ch – f(t) = s (t) • ch – f

ch – f = 125 °C/W, Ta = 25 °C

θ γ θ

When using the glass epoxy board

(FR4 40x40x1.6 mm)

10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

10 µ100 µ1 m 10 m 100 m 1 10 100 1000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

D = PW

ch – f(t) = s (t) • ch – f

ch – f = 166 °C/W, Ta = 25 °C

θ γ θ

When using the glass epoxy board

(FR4 40x40x1.6 mm)

HAT2029R

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

FP-8DA

Conforms

—

0.085 g

*Dimension including the plating thickness

Base material dimension

1.75 Max

4.90

0.25

0.15

0° – 8°

1.27

3.95

0.40 ± 0.06

*0.42 ± 0.08

5.3 Max

0.75 Max

0.14+ 0.11

– 0.04

0.20 ± 0.03

*0.22 ± 0.03

0.60+ 0.67

– 0.20

6.10+ 0.10

– 0.30 1.08

As of January, 2001

Unit: mm

HAT2029R

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower,

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0